• Title/Summary/Keyword: Plasma chemical reaction

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Synthesis and Characterization of Adsorbent for Pb(II)-capture by using Glow Discharge Electrolysis Plasma

  • Gao, Jinzhang;Wang, Youdi;Yang, Wu;Li, Yan
    • Bulletin of the Korean Chemical Society
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    • v.31 no.2
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    • pp.406-414
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    • 2010
  • A novel polyacrylamide grafted hydrous ferric oxide adsorbent composite has been synthesized by using glow discharge electrolysis plasma. To optimize the synthesis conditions, the following parameters were examined in detail: applied power, discharge time, post polymerization temperature, post polymerization time, amount of crosslinking agent and hydrous ferric oxide gel added and so on. The adsorbent was characterized by Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). The removal percentage of the adsorbent in Pb(II) solution was examined and the data obtained showed that the adsorbent composite has a high capacity for lead ion. For the use in wastewater treatment, the thermodynamic and kinetic of Pb(II)-capture were also studied. Results indicated that the adsorption reaction was a spontaneous and an endothermic process, and it seems to be obeyed a pseudo-secondorder rate model. Moreover, the adsorption isotherm of Pb(II)-capture is following the Langmuir and Freundlich isotherm models.

Different formation of carbon nanofilaments as a function of the gap between the substrate and the microwave plasma

  • Kim Sung-Hoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.16 no.1
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    • pp.20-24
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    • 2006
  • Iridium-catalyzed carbon nanofilaments were formed on MgO substrate as a function of the gap between the substrate and the plasma using microwave plasma-enhanced chemical vapor deposition method. Under the remote plasma condition, carbon nanofibers were formed on the substrate. Under the adjacent plasma condition, on the other hand, carbon nanotubes-like materials instead of carbon nanofibers could be formed. When the substrate immersed into the plasma, any carbon nanofilaments formation couldn't be observed. During the reaction, the substrate temperatures were measured as a function of the gap. Based on these results, the cause for the different carbon nanofilaments formation according to the gap was discussed.

The Present Status of Development of Inductively Coupled Plasma Simulator based on Fluid Model (유체 모델을 기반으로 하는 유도 결합 플라즈마 시뮬레이터 개발 현황)

  • Kwon, D.C.;Yoon, N.S.
    • Journal of the Korean Vacuum Society
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    • v.18 no.3
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    • pp.151-163
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    • 2009
  • The domestic development status of Inductively Coupled Plasma (ICP) simulator which is based on fluid model is explained. As each part which composes the unified simulator, electron heating module, charged and neutral particle transport module, surface reaction module including a sheath model, and GUI (Graphic User Interface) with pre- and post-processors are described in order. Also, we present data base status of chemical reaction and physical collision, which has been applied to the recently developed simulator until now. Lastly, some future plans of development are suggested.

Etching Characteristics of Gold Thin films using Inductively Coupled Cl2/Ar Plasma (Cl2/Ar 유도 결합 플라즈마에 의한 gold 박막의 식각특성)

  • 장윤성;김동표;김창일;장의구;이수재
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.12
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    • pp.1011-1015
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    • 2002
  • In this study, Au thin films were etched with a Cl$_2$/Ar gas combination in an inductively coupled plasma. The highest etch rate of the Au thin film was 3500 A/min at a Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is Au-Cl bonding by chemical reaction between Cl and Au. During the etching of Au thin films in Cl$_2$/Ar plasma, Au-Cl bond is formed, and these products can be removed by the physical bombardment of Ar ions[l].

Surface Modification of Polymeric Material Using Atmospheric Plasma (대기압 플라즈마를 이용한 고분자 소재의 표면개질)

  • Sim, Dong-Hyun;Seul, Soo-Duk
    • Polymer(Korea)
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    • v.32 no.5
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    • pp.433-439
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    • 2008
  • An atmospheric plasma pre-treatment method was applied to polyurethane foam (density: 0.27) and rubber (butadiene rubber) to improve its contact angle and adhesion using atmospheric plate type reactor. In order to investigate the optimum reaction condition of plasma treatment, type of treatment gas (nitrogen, argon, oxygen, air), rate of gas flow ($30{\sim}100\;mL/min$), and treated time ($0{\sim}30\;s$) were examined in a plate plasma reactor. The result of the surface modification with respect to the treatment procedure was characterized by using SEM and ATR-FTIR. Due to a decrease of the contact angle of various materials, the greatest adhesion strength was achieved at optimum condition such as flow rate of 100 mL/min, reaction time of polyurethane foam 10 s and rubber 3 s for an atmosphere nitrogen gas. Consequently, the atmospheric plasma treatment reduced the wettability of the polyurethane foam and rubber also resulted in the improvement of the adhesion.

Surface Reactions on the Bi4-xLaxTiO3O12 Thin Films Etched in Inductively Coupled CF4/Ar Plasma (유도결합 CF4/Ar 플라즈마에 의한 Bi4-xLaxTiO3O12 박막의 식각 표면 반응)

  • 김동표;김경태;김창일
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.5
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    • pp.378-384
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    • 2003
  • Etching species in CF$_4$/Ar plasma and the behavior of etching rate of Bi$_4$-$_{x}$L$_{x}$rTi$_3$O$_2$ (BLT) films were investigated in inductively coupled plasma (ICP) reactor in terms of etch parameters. The etching rate as functions of CF$_4$ contents showed the maximum 803 $\AA$/min at 20% CF$_4$ addition in CF$_4$/Ar plasma. The increase of RF power and DC bias voltage caused to an increase of etch rate. The variation of relative volume densities for F and he atoms were measured with the optical emission spectroscopy (OES). The chemical states of BLT were investigated with using X-ray photoelectron spectroscopy (XPS). XPS narrow scan analysis shows that La-fluorides remained on the etched surface. The presence of maximum etch rate at CF$_4$(20%)/Ar(80%) may be explained by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction. The roles of he ion bombardment include destruction of metal (Bi, La, Ti)-O bonds as well as assistant for chemical reaction of metals with fluorine atoms.oms.

Etching Mechanism of $YMnO_3$ Thin Films in High Density $CF_{4}/Ar$ Plasma (고밀도 $CF_{4}/Ar$ 플라즈마에서 $YMnO_3$ 박막의 식각 매카니즘)

  • Lee, Cheol-ln;Kim, Dong-Pyo;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05b
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    • pp.12-16
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    • 2001
  • We investigated the etching characteristics of $YMnO_3$ thin films in high-density plasma etching system. In this study. $YMnO_3$ thin films were etched with $CF_{4}/Ar$ gas chemistries in inductively coupled plasma (ICP). Etch rates of $YMnO_3$ were measured according to gas mixing ratios. The maximum etch rate of $YMnO_3$ is 18 nm/min at $CF_{4}/(CF_{4}+Ar)$ of 20%. In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing $CF_4$ content. Chemical states of $YMnO_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. $YF_x$, $MnF_x$ such as YF, $YF_2$, $YF_3$ and $MnF_3$ Were detected using SIMS analysis. The etch slope is about $65^{\circ}C$ and free of residues.

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Development of pH-Responsive Core-Shell Microcapsule Reactor

  • Akamatsu, Kazuki;Yamaguchi, Takeo
    • Proceedings of the Membrane Society of Korea Conference
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    • 2004.05a
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    • pp.191-194
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    • 2004
  • A novel type of intelligent microcapsule reactor system was prepared. The reactor can recognize pH change in the medea and control reaction rate by itself. For the reactor system, acrylic acid (AA), N-isopropylacrylamide (NIPAM), and glucose oxidase (GOD) were selected as a pH-responsive device, a gating device according and a reaction device, respectively. Poly(NIPAM-co-AA) (P-NIPAM-co-AA) are known to change its hydrophilicity-hydrophobicity due to pH change. They were integrated in a core-shell microcapsule space. GOD was loaded inside the core space and the pores in the outside shell layer were filled with P-NIPAM-co-AA linear grafted chains as pH-responsive gates by plasma graft filling polymerization method. When P-NIPAM-co-AA gates are hydrophilic at high pH value, this microcapsule permits glucose penetration into the core space and GOD reaction proceeds. However, when P-NIPAM-co-AA gates are hydrophobic at low pH value, this microcapsule forbids glucose penetration and GOD reaction will not occur. The accuracy of this concept was examined.

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Thermal Lamination of Polyethylene Film on Aluminum by Surface Modification (표면개질을 이용한 폴리에틸렌 필름과 알루미늄간의 열융착)

  • Cho, Dong-Lyun;Yun, Ta-Song
    • Polymer(Korea)
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    • v.25 no.4
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    • pp.594-601
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    • 2001
  • Direct thermal lamination of polyethylene film on aluminum plate without using adhesive was tried by modifying their surfaces to have polar groups. Polyethylene film was modified by treating with oxygen or acrylic acid plasma. Aluminum plate was modified by treating with boiling water or diaminocyclohexane plasma. Fairly high adhesion strength was obtained even in the case when only the polyethylene film was modified, and adhesion strength was so high that film was broken during the adhesion test if both the film and the aluminum plate were modified. Even chemical bonding seemed to be possible when the film treated with acrylic acid was laminated on the plate treated with diaminocyclohexane plasma by forming amide linkage through the reaction between COOH groups on the film surface and NH$_2$ groups on the plate surface.

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Analysis of characteristics of discharge in liquid

  • Kim, Ju-Sung;Min, Boo-Ki;Hong, Young-June;Kang, Seong-Oun;Choi, Eun-Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.209.2-209.2
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    • 2016
  • Up to now, Plasma applications are thought as a leading technology in industrial, chemical and even medical and biological field. Especially, Due to direct discharge in liquid with reaction in ambient solution, plasma in liquid is useful plasma technology. Such as electro-surgery, water purification, radical generation for synthesis. For using those plasma applications efficiently, plasma characteristics should be understood in advance. But discharge in liquid is not much well-known about its characteristics. And plasma discharge in solution is difficult to generate and analysis due to electrolysis, vaporization and radical generation. So, We make stable plasma discharge in solution(saline 0.9%) without input gas. We also analyze new type of plasma source in thermal and electrochemical view. And we check characteristics of plasma in liquid. For example, plasma density and radical density(OH) with optical emission, thermal energy with thermometer, electrical energy with oscilloscope and so on. And we try to explain the bubble and plasma formation with circuit analysis.

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