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http://dx.doi.org/10.4313/JKEM.2002.15.12.1011

Etching Characteristics of Gold Thin films using Inductively Coupled Cl2/Ar Plasma  

장윤성 (중앙대학교 전자전기공학부)
김동표 (중앙대학교 전자전기공학부)
김창일 (중앙대학교 전자전기공학부)
장의구 (중앙대학교 전자전기공학부)
이수재 (한국전자통신연구원 반도체원천기술연구소)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.15, no.12, 2002 , pp. 1011-1015 More about this Journal
Abstract
In this study, Au thin films were etched with a Cl$_2$/Ar gas combination in an inductively coupled plasma. The highest etch rate of the Au thin film was 3500 A/min at a Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is Au-Cl bonding by chemical reaction between Cl and Au. During the etching of Au thin films in Cl$_2$/Ar plasma, Au-Cl bond is formed, and these products can be removed by the physical bombardment of Ar ions[l].
Keywords
Au; Etching; Cl$_2$/Ar; ICP; XPS;
Citations & Related Records
Times Cited By KSCI : 4  (Citation Analysis)
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