• Journal of Korean Society for Atmospheric Environment
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• v.19 no.1
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• pp.77-84
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• 2003

HS, Ammonia, CH$_4$, VOCs, Microorganism, Bacteria etc produced from swineries or henhouses are known to prevent the growth of livestock. Moreover, they give an unpleasant feeling to the workers. In this study, a methodology to remove odors and toxic gases by oxidation of ozone was thus accomplished. However, most ozone generators which use the atmospheric surrounding air have problems of contamination of electrode for discharge. Therefore in this work, a wire-cylinder type plasma reactor with DC voltage has been used both in a laboratory scale test and in the real swinery to solve the existing problems. About 6 cm of electrode gap could decrease the attachment of dusts, humid aerosols and other polymers, which are contained in the air. This compact designed device could produce ozone to oxidize and remove the air pollutants. But the amount of ozone was not large enough to be harmful to human Health. Also, the concentration of ozone was able to be varied by the input voltage. which makes it available for the proposed system to be installed in various kinds of pig houses. With this device, at maximum 43 mg/㎥ (20 ppm) of ozone could be produced at 40 ㎸ input voltage (consumed energy was 0.1 Wh/㎥). A program was also made in this work to calculate the optimum parameters for design of a plasma reactor in wide range of conditions.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.43 no.5
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• pp.55-59
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• 2011

Atmospheric plasma technology was utilized in order to modify surface characteristics of base paper for coating. Argon(Ar) and oxygen(O2) gases were used. It was found that contact angle of a water droplet was decreased with increasing voltage during plasma treatment, meaning that the hydrophilicity of paper surface was increased. On the other hand, the physical properties like roughness and optical properties such as gloss, brightness and opacity were not influenced by the plasma treatment. In conclusion, atmospheric plasma technology can be utilized to control hydrophilicity of paper surface without affecting physical properties of the paper.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.2
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• pp.62-66
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• 2004

This paper investigated the characteristics of a newly developed high density hollow cathode plasma (HCP) system and its application for the etching of silicon wafers. We used SF$_{6}$ and $O_2$ gases in the HCP dry etch process. Silicon etch rate of $0.5\mu\textrm{m}$/min was achieved with $SF_6$$O_2$plasma conditions having a total gas pressure of 50mTorr, and RF power of 100 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. The results of this experiment can be used for various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications.s.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.2
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• pp.85-89
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• 2021

High reliability thin film transistors are important factors for next-generation displays. The reliability of transparent a-IGZO semiconductors is being actively studied for display applications. A plasma treatment can fill the oxygen vacancies in the channel layer and the channel layer/insulating layer interface so that the device can work stably under a bias voltage. This paper studies the effect of plasma treatment on the performance of a-IGZO TFT devices. The influence of different plasma gases on the electrical parameters of device and its working reliability are reviewed. The article mentions argon, fluorine, hydrogen and several ways of processing in the atmosphere. Among these methods, F (fluorine) plasma treatment can maximize equipment reliability. It is expected that the presented results will form a basis for further research to improve the reliability of a-IGZO TFT.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.216-216
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• 1999

The usage of a stationary plasma thruster (SPT) ion source, invented previously for space application in Russia, in experiments with surface modifications and film deposition systems is reported here. Plasma in the SPT is formed and accelerated in electric discharge taking place in the crossed axial electric and radial magnetic fields. Brief description of the construction of specific model of SPT used in the experiments is presented. With gas flow rate 39ml/min, ion current distributions at several distances from the source are obtained. These was equal to 1~3 mA/$\textrm{cm}^2$ within an ion beam ejection angle of $\pm$20$^{\circ}$with discharge voltage 160V for Ar as a working gas. Such an extremely high ion current density allows us to obtain the Ti metal films with deposition rate of $\AA$/sec by sputtering of Ti target. It is shown a possibility of using of reactive gases in SPT (O2 and N2) along with high purity inert gases used for cathode to prevent the latter contamination. It is shown the SPT can be operated at the discharge and accelerating boltages up to 600V. The results of presented experiments show high promises of the SPT in sputtering and surface modification systems for deposition of oxide thin films on Si or polymer substrates for semiconductor devices, optical coatings and metal corrosion barrier layers. Also, we have been tried to establish in application of the modeling expertise gained in electric and ionic propulsion to permit numerical simulation of additional processing systems. In this mechanism, it will be compared with conventional DC sputtering for film microstructure, chemical composition and crystallographic considerations.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.211-211
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• 1999

Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.

• Journal of the Korean institute of surface engineering
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• v.38 no.3
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• pp.118-125
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• 2005

Low temperature plasma treatment with different gases and rf powers were performed to improve the adhesion strength between polytetrafluoroethylene(PTFE) and electroless deposited copper. According to the research, $H_2$ plasma having hydrogen radical was more effective in surface polarity modification than $O_2$ plasma due to the defluorination reaction. However, surface roughness of PTFE was more increased with $O_2$ than $H_2$ plasma. PTFE treated with $120W-O_2$ plasma and $250w-H_2$ plasma, consecutively showed rougher surface than single step $250w-H_2$ plasma treated one and more hydrophilic than single step $120W-O_2$ plasma treated one. And it showed 5B tape test grade, which is better adhesion property than 1B or 3B obtained by single step plasma treatment. In addition, adhesion strength between PTFE and Cu deposit is also deeply affected by residual water on its interface.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.18 no.1
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• pp.28-35
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• 2004

$N_2$ has been one of the most useful gases in industrial application, for example, plasma ashing, surface cleaning and decomposition of pollution gases. In order to clarify $N_2$ plasma properties and increase practical applications, many experimental and theoretical investigations have been carried out until now on. In this papa, we examined the characteristics of $N_2$ RF Plasmas using one-dimensional fluid model. $N_2$ plasmas showed a double-layer structure in both sheath regions as the power source voltage becomes higher. Generally, a double-layer structure should be showed in electro-negative plasmas, but not in electro-postive plasmas such as $N_2$ discharge. However, most electrons in $N_2$ plasmas lost their energy by many excitation reactions in the near of both electrodes where electron collisions were actively executed and such continuous reactions during an RF period made this structure strong with increase of the power source voltage. The dependence of $N_2$ plasma properties on pressure was also discussed.

• Mass Spectrometry Letters
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• v.6 no.4
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• pp.112-115
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• 2015

In this article, we examine the influences of Ne and He buffer gases under confined Ar⁺ ion cloud in a homemade Paul ion trap in various pressures and confinement times. The trap is of small size (r₀ = 1 cm) operating in a radio frequency (rf) voltage only mode, and has limited accuracy of 13 V. The electron impact and ionization process take place inside the trap and a Faraday cup has been used for the detection. Although the experimental results show that the Ar⁺ ion FWHM with Ne buffer gas is wider than the He buffer gas at the same pressure (1×10^-1 mbar) and confinement time is about 1000 μs, nevertheless, a faster cooling was found with He buffer gas with 500 μs. ultimetly, the obtanied results performed an average cloud tempertures reduced from 1777 K to 448.3 K for Ne (1000 μs) and from 1787.9 K to 469.4 K for He (500 μs)

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.880-883
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• 1996

Plasma Source Ion Implantation (PSII) technique was used for the hydrophilization or hydrophobization of polymer surfaces. Polymers were modified with different plasma gases such as oxygen, nitrogen, argon, and tetrafluoromethane, and for varying lengths of treatment time. Plasma ion treatment of oxygen, nitrogen, argon and their mixtures increased significantly the hydrophilic properties of polymer surfaces. More hydrophobic surfaces of polymers were formed after the treatment with tetrafluoromethane. A study of plasma source ion implanted polymers was performed using contact angle measurements and Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS). The TOF-SIMS spectra and depth profile were used to obtain the information about the treated surfaces of polymers. The permanence of this technique could be evaluated with respect to ageing time. The surfaces treated with PSII gave better stability than other surface modification methods.