• International journal of advanced smart convergence
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• v.6 no.1
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• pp.50-56
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• 2017

Wireless sensor nodes have limited energy, so it is important to optimize energy consumption to preserve network lifetime. Various protocols have been proposed for this purpose. LEACH protocol and SEP are the representative protocols. These protocols become less effective as the Sensor Field becomes wider. To improve this, MR-SEP and L-SEP were proposed. These protocols increase the energy efficiency by dividing the Sensor Field into layers and reducing the transmission distance. However, when dividing a layer, there are cases where it is divided inefficiently, and a node within a certain range from a Base Station has a better transmission efficiency than a direct transmission method using a cluster method. In this paper, we propose a Single-hop layer for L-SEP to improve inefficient layer division and near node transmission efficiency. When the larger the Sensor Field, the better the performance of the proposed method by up to 87%. The larger the sensor field, the more efficient the proposed method is over the conventional method. That is, the proposed method is suitable for the wide Sensor Field.

• International Journal of Internet, Broadcasting and Communication
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• v.12 no.2
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• pp.90-97
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• 2020

Recently, with the growth of mixed reality industrial infrastructure, relevant convergence research has been proposed. For real-time mixed reality services such as remote video conferencing, the research on real-time acquisition-process-transfer methods is required. This paper aims to implement an AR remote rendering method of volumetric 3D video data. We have proposed and implemented two modules; one, the parsing module of the volumetric 3D video to a game engine, and two, the server rendering module. The result of the experiment showed that the volumetric 3D video sequence data of about 15 MB was compressed by 6-7%. The remote module was streamed at 27 fps at a 1200 by 1200 resolution. The results of this paper are expected to be applied to an AR cloud service.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1103-1106
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• 2006

We have presented a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_2O_3$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_2O_3$ as both a top gate dielectric and a passivation layer is reported. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_2O_3$ as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure has been successfully understood by an analysis of electrostatic potential.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1640-1644
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• 2006

The first issue that should be overcome in copper process is its poor adhesive strength between pure copper film and glass substrate. In this study, defining the adhesive strength of pure copper film on various substrates and clarifying the key deposition parameters are presented for the investigation of copper process. First, using different kinds of surface plasma treatments were studied and the results showed that the adhesive strength was not improved even though the roughness of glass substrate surface was increased. Second, adding an adhesive layer between glass substrate and pure copper film was used to enhance the adhesion. Based on the data in the present paper, adopting copper alloy film as an adhesive layer can have capability preventing peeling problem in copper process. Besides, Cu/Cu alloy structure could be etched with the same etchant with better taper angle than the one with single layer of Cu. Unlike Cu/Mo structure, there is no residual problem for Cu/Cu alloy structure during etching process. Finally, this structure was examined in electrical test without significant difference in comparison with the conventional metal process.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1534-1535
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• 2005

Highly luminescent efficiency phosphors have been successfully produced by surface modification and microwave irradiation treatment. The SEM image and XRD analysis reveal that the surface morphology of the white-light phosphors can be notably modified by microwave irradiation and exhibit with better crystalline property. The VUV PL spectra show that the microwave irradiation treatment can effectively enhance the luminescent efficiency by a factor of 1.5 times for intensity compared to that without microwave treatment. A further improvement in all visible emission can be made by modifying surface composition through MgO coating on the phosphor powder. These results demonstrate that such a simple approach can provide for improving luminescent efficiency of phosphors for the optoelectronic devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1025-1028
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• 2005

Microcrystalline Si (${\mu}c-Si$) TFTs were fabricated using a conventional bottom gate amorphous Si (a-Si) process. A unique ${\mu}c-Si$ deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the ${\mu}c-Si$ an $N_2$ plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of ${\mu}c-Si$ TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 ${\mu}A$ was achieved with $V_{data}$ of 10 V. After the simulation, a linear equation for the pixel current was suggested.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.11
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• pp.536-540
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• 2002

This paper proposes a method to drive an AC plasma display panel(PDP) with a significantly improved contrast ratio. In the proposed method, during the first sub-field of one frame, all PDP cells are reset by the ramp waveform, and during the other sub-field, only the cells turned on in the previous sub-field are reset. No light is emitted during the reset period of every sub-field except the first sub-field. For a 10-bit picture, the luminance of the dark level for the proposed method is 10 times lower than that for the conventional method, in which the ramp waveform for the reset is used in every sub-field. Accordingly, the contrast ratio for the proposed method is 10 times higher than that for the conventional method. For the 10-bit picture, the measured contrast ratio was about 3080:1 for the proposed method and about 285:1 with the conventional method, a result the contrast ratio has been increased in 10.8 times. This result shows that the proposed method can realize an image with high contrast ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1074-1077
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• 2003

우리는 AC-PDP에서 휘도와 효율을 향상시키기 위하여 Ne-Xe(4%)와 He(7)-Ne(3)-Xe(3%)에 소량의 Ar 또는 Kr를 첨가하여 최적의 페닝 방전가스 혼합비를 연구하였다. 우리는 이것을 증명하기 위해 효율과 Q-V 방법을 이용하여 벽전하를 계산하였으며, 2차원 시뮬레이션에서의 결과값과 비교하였다. 200 Torr 압력에서 He-Ne-Xe 또는 Ne-Xe에 소량의 Ar(0.01-0.1%) 또는 Kr(0.01-0.1%)을 첨가시켰을 때, 우리는 20% 이상의 휘도의 증가와 25% 이상의 효율 증가를 발견하였고, 또한 벽전하도 25% 이상의 증가를 보였다. 400 Torr 압력에서 He-Ne-Xe-Kr(0.005%)에 소량의 Ar(0.005-0.1%)를 첨가시켰을 때는 8% 이상의 휘도의 증가와 18% 이상의 효율 증가, 12% 이상의 벽전하 증가를 확인하였다. 결론적으로 이 결과는 He, Ne, Ar, Kr 사이에 추가적인 페닝효과가 휘도와 효율을 향상시켰다는 것을 보여준다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1096-1099
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• 2004

The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system BaO-ZnO-$B_2O_3$-$V_2O_5$. DTA, and XRD were used to characterize BaO-ZnO-$B_2O_3$-$V_2O_5$ glasses. In this present study, PbO free paste had thermal expansion of $74\times10^{-7}/^{\circ}C$, DTA softening point of $460^{\circ}C$, and firing condition of $520^{\circ}C$, 20min

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.103-107
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• 2000

The relationships between driving voltage and the wall charge distribution in the address period of surface discharge type AC Plasma Display Panel have been investigated. The quantity of wall charge on each electrode are detected simultaneously from the electrode current after applying only one addressing discharge pulse. The wall charge Qy on the scan electrode Y is nearly the sum of Qx on the address electrode X and Qz on the sustain electrode Z. The Qy increased with the driving voltage regardless of the kind of electrode, whereas the address time Td decreased, Qz and Qy are increased considerably with the blocking voltage Vz, whereas Qx is decreased. The increase rate of Qx, Qy and Qz for increase in Vz was $-13{\times}10^{-2}$ (pc/Vz), and $60{\times}10^{-2}$ (pc/Vz) and $70{\times}10^{-2}$(pc/Vz), respectively.