• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.181-186
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• 2007

We have investigated and analyzed the effects of the evaporation rate of MgO films on the MgO properties and the discharge characteristics of a plasma display panel(PDP). The MgO properties such as the crystal orientation, the surface roughness, the film structure, and cathode-luminescence (CL) spectra were inspected using XRD (X-ray diffraction), AFM(atomic force microscopy). And the discharging characteristics of the PDP such as the firing voltage, discharging current, and luminescence were measured using a vacuum chamber with oscilloscope (TDS 540C), current probe (TCP-312A), color meter (CS-100A) and etc. From the experiments results we confirmed the optimum evaporation rate at $5{\AA}/sec$, the MgO properties were shown to be strongly dependent on the evaporation rate, and the MgO properties had an effecton the optical and electrical characteristics. In other words, if the evaporation rates increase than $5{\AA}/sec$, the intensity of (200) orientation and cathode-luminescence (CL) spectra reduce, and the firing vlotage was increased. So the luminuous efficiency grows worse.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.266-272
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• 2006

Application of power higher than the optimum operation value to an external electrode fluorescent lamps(EEFL) leads to the formation of small holes, called pinholes, which subsequently leads to lamp failure. The pinholes come from the insulating breakdown of the capacitor which is the dielectric layer between an external electrode and glass tube. The power of insulation breakdown is proportional to the electric power applied to the lamp. When a lamp current is low in the glass tube of dielectric constant K, the dielectric field strength of pinholes is about 3K kV/mm. The field strength of insulation breakdown decreases as the lamp current increases.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1547-1550
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• 2008

We are suggesting a new index to represent the performance of PDP, such as Specific Performance Index (SPI) that includes luminous efficacy and panel reflectance. High Xe gas mixture and low panel capacitance are well known as key factors to improve luminous efficacy of PDP [1]. However, higher driving voltage and longer discharge time lag is an obstacle when applying these technologies. Modified cell design, new materials and driving waveform enable us to overcome these obstacles. High efficient phosphor is also a key material to improve luminous efficacy. Phosphors coated with pigment are used to reduce panel reflectance. High performance 50-inch HD PDP with luminous efficacy of 2.3 lm/W has been developed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.787-790
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• 2003

A rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of $E{\times}B$ field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• The Journal of Korean Academy of Prosthodontics
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• v.44 no.5
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• pp.617-627
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• 2006

Statement of problem: HA has been used as a coating material on Ti implants to improve osteoconductivity. However. it is difficult to form uniform HA coatings on implants with complex surface geometries using a plasma spraying technique. Purpose : To determine if Ti6Al4V sintered porous-surfaced implants coated with HA sol-gel coated and hydrothermal treated would accelerate osseointegration. Materials and Methods : Porous implants which were made by electric discharge were used in this study. Implants were anodized and hydrothermal treatment or HA sol-gel coating was performed. Hydrothermal treatment was conducted by high pressure steam at $300^{\circ}C$ for 2 hours using a autoclave. To make a HA sol, triethyl phosphite and calcium nitrate were diluted and dissolved in anhydrous ethanol and mixed. Then anodized implant were spin-coated with the prepared HA sols and heat treated. Samples were soaked in the Hanks solution with pH 7.4 at $37^{\circ}C$ for 6 weeks. The microstructure of the specimens was observed with a scanning electron microscope (SEM), and the composition of the surface layer was analyzed with an energy dispersive spectroscope (EDS). Results : The scanning electron micrographs of HA sol-gel coated and hydrothermal treated surface did not show any significant change in the size or shape of the pores. After immersion in Hanks' solution the precipitated HA crystals covered macro- and micro-pores The precipitated Ca and P increased in Hanks' solution that surface treatment caused increased activity. Conclusion : This study shows that sol-gel coated HA and hydrothermal treatment significantly enhance the rate of HA formation due to the altered surface chemistry.

• Journal of the Korean Chemical Society
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• v.38 no.1
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• pp.34-40
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• 1994

First observation of uranium using a diode laser was published recently. The experiment was performed by the optogalvanic spectroscopy using diode lasers. A laser source causes the current change in a hollow cathode discharge lamp when metal atoms in plasma absorb the diode laser light. The optogalvanic signal is collected by detecting the current change. This work is the extended investigation of our previous research, the uranium detection using a diode laser. New electronic transitions of uranium and thorium in 775∼850 nm were investigated using diode lasers. In addition, the Rb(Ⅰ) optogalvanic spectra at 780.02 nm and 794.76 nm were studied. The Rb(Ⅰ) spectrum at 780.02 nm showed the isotopic features and hyperfine splittings. This work provides a key idea that the diode lasers are useful in the specrochemical analysis of the radioactive actinides that have a rich spectrum with transitions which can be easily reached with AlGaAs diode lasers. Also, this study shows that the diode lasers can be an important tool to find the spectroscopic parameters of actinides and rare earth elements which have not known.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1260-1261
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• 2008

Aluminium doped zinc oxide (ZnO:Al) thin film has emerged as one of the most promising transparent conducting electrode in flat panel displays(FPD) and in photovoltaic devices since it is inexpensive, mechanically stable, and highly resistant to deoxidation. In this paper ZnO:Al thin film was deposited on the polyethylene terephthalate(PET) substrate by the capacitively coupled r.f. magnetron sputtering method. Wide ranges of bias voltage, -30V${\sim}$45V, was applied to the growing films as an additional energy instead of substrate heating, and the effect of positive and negative bias on the film structure and electrical properties of ZnO:Al films was studied and discussed. The results showed that a bias applied to the substrate during sputtering contributed to the improvement of electrical properties of the film by attracting ions and electrons in the plasma to bombard the growing films. These bombardments provided additional energy to the growing ZnO film on the substrate, resulting in significant variations in film structure and electrical properties. The film deposited on the PET substrate at r. f. discharge power of 200 W showed the minimum resistivity of about $2.4{\times}10^{-3}{\Omega}-cm$ and a transmittance of about 87%.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.162-162
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• 2014

최근 들어 wearable computing에 대한 수요가 증가하면서 flexible device에 대한 연구가 활발히 진행되고 있다. 하지만, flexible device를 구현하기 위해서는 기판의 damage를 줄이기 위한 저온공정, device life-time 향상을 위한 passivation, 와이어 본딩 등 다양한 문제들이 해결 되어야 한다. 이러한 문제들 중, polymer 기판과 금속간의 접착력을 향상시키기 위해서 많은 연구자들은 기판의 표면에 adhesive layer를 도포하거나 금속잉크의 solvent를 변화시키는 등의 연구를 진행해왔다. 종래의 연구는 기존 device를 대체 할 수 있을 정도의 생산성과 polymer 기판에 대한 열 적인 손상 이 문제가 되었다. 종래의 문제를 해결하기 위하여 저온공정, in-line system이 가능한 준 준 대기압 플라즈마를 사용하였다. 본 연구에서는 금속잉크를 Ink-jet으로 jetting하여 와이어 본딩 하는 과정에서 전도성 ink의 선폭을 유지시키고 접착력을 향상하기 위하여 준 대기압 플라즈마 공정을 이용하여 이러한 문제점을 해결하고자 하였다. Polymer 기판 표면에 roughness를 만들기 위해 대략 수백 nm 크기를 갖는 graphene flake를 spray coating하여 마스크로 사용하고 준 대기압 플라즈마를 이용하여 표면을 식각 함으로써 roughness를 형성시켰다. 준 대기압 플라즈마를 발생시키기 위해 double discharge system에서 6 slm/1.5 slm (He/O2) gas composition을 하부 전극에 흘려보내고 60 kHz, 5 kV 파워를 인가하였다. 동시에 상부 전극에는 30 kHz, 5 kV 파워를 인가하여 110초 동안 표면 식각 공정을 진행하였다. Graphene flake mask가 coating되어 있는 유연기판을 산소 플라즈마 처리 한 후 물에 3초 동안 세척하여 표면에 남아있는 graphene flake를 제거하고 6 slm/0.3 slm (He/SF6)의 유량으로 주파수와 파워 모두 동일 조건으로 110초 동안 표면 처리를 하였다. Figure 1은 표면 개질 과정과 graphene flake를 mask로 사용하여 얻은 roughness 결과를 SEM을 이용하여 관찰한 결과이다. 이와 같이 실험한 결과 ink와 기판간의 접촉면적을 늘려주고 접촉 각을 조절하여 Wenzel model 을 형성 할 수 있는 표면 roughness를 생성하였고 표면의 화학적 결합을 C-F group으로 치환하여 표면의 물과 접촉각 이 $47^{\circ}$에서 $130^{\circ}$로 증가하는 것을 확인하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.619-619
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• 2009

Recently, silica nanostructures are widely used in various applicationary areas such as chemical sensors, biosensors, nano-fillers, markers, catalysts, and as a substrate for quantum dots etc, because of their excellent physical, chemical and optical properties. Additionally, these days, semiconductor silica and silicon with high purity is a key challenge because of their metallurgical grade silicon (MG-Si) exhibit purity of about 99% produced by an arc discharge method with high cast. Tremendous efforts are being paid towards this direction to reduce the cast of high purity silicon for generation of photovoltaic power as a solar cell. In this direction, which contains a small amount of impurities, which can be further purified by acid leaching process. In this regard, initially the low cast rice-husk was cultivated from local rice field and washed well with high purity distilled water and were treated with acid leaching process (1:10 HCl and $H_2O$) to remove the atmospheric dirt and impurity. The acid treated rice-husk was again washed with distilled water and dried in an oven at $60^{\circ}C$. The dried rice-husk was further annealed at different temperatures (620 and $900^{\circ}C$) for the formation of silica nanospheres. The confirmation of silica was observed by the X-ray diffraction pattern and X-ray photoelectron spectroscopy. The morphology of obtained nanostructures were analyzed via Field-emission scanning electron microscope(FE-SEM) and Transmission electron microscopy(TEM) and it reveals that the size of each nanosphares is about 50-60nm. Using the Inductively coupled plasma mass spectrometry(ICP-MS), Silica was analyzed for the amount of impurities.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.459-459
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• 2012

Recently, the discharge of global warming gases in dry etching process of TFT-LCD display industry is a serious issue because perfluorocarbon compound (PFC) gas causes global warming effects. PFCs including CF4, C2F6, C3F8, CHF3, NF3 and SF6 are widely used as etching and cleaning gases. In particular, the SF6 gas is chemically stable compounds. However, these gases have large global warming potential (GWP100 = 24,900) and lifetime (3,200). In this work, we chose C3F6O gas which has a very low GWP (GWP100 = <100) and lifetime (< 1) as a replacement gas. This study investigated the effects of the gas flow ratio of C3F6O/O2 and process pressure in dual-frequency capacitively coupled plasma (CCP) etcher on global warming effects. Also, we compared global warming effects of C3F6O gas with those of SF6 gas during dry etching of a patterned positive type photo-resist/silicon nitride/glass substrate. The etch rate measurements and emission of by-products were analyzed by scanning electron Microscopy (SEM; HITACI, S-3500H) and Fourier transform infrared spectroscopy (FT-IR; MIDAC, I2000), respectively. Calculation of MMTCE (million metric ton carbon equivalents) based on the emitted by-products were performed during etching by controlling various process parameters. The evaluation procedure and results will be discussed in detail.