• Title/Summary/Keyword: Plasma Coating

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결정질 실리콘 태양전지 적용을 위한 HWCVD $SiN_x$ 막 연구 ($SiN_x$ Film Deposited by Hot Wire Chemical Vapor Deposition Method for Crystalline Silicon Solar Cells)

  • 김하영;박민경;김민영;최정호;노시철;서화일
    • 반도체디스플레이기술학회지
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    • 제13권3호
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    • pp.27-33
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    • 2014
  • To develop high efficiency crystalline solar cells, the $SiN_x$ film for surface passivation and anti-reflection coating is very important and it is generally deposited by PECVD. In this paper, the $SiN_x$ film deposited by Hot-Wire chemical vapor deposition(HWCVD) that has no plasma damage was studied. First, to optimize the $SiN_x$ film deposition process, $SiH_4$ gas rate and substrate temperature were varied and then refractive index and thickness were measured. When $SiH_4$ gas rate was 22sccm and substrate temperature was $100^{\circ}C$, refractive index was 1.94 and higher than that of other process conditions. Second, the lifetime was measured by varying the annealing temperature and time. The annealing process was made from 5 to 30 minutes at $300{\sim}500^{\circ}C$. When the annealing temperature was $100^{\circ}C$ and time was 10minute, the lifetime was the highest. The lifetime of annealed samples was also measured after the firing process at $975^{\circ}C$. Although the lifetime of all samples was decreased by firing process, the lifetime of annealed samples before the firing process was higher than that of fired samples only. Finally, the characteristics of solar cells with HWCVD $SiN_x$ film were measured.

IMZ 임플란트의 장기적 성공률과 실패율 (Long-term Evaluation of IMZ Implants;Success and Survival Rates)

  • 박지은;김태균;정의원;김창성;최성호;조규성;김종관;채중규
    • Journal of Periodontal and Implant Science
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    • 제35권4호
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    • pp.1039-1052
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    • 2005
  • IMZ는 "intramobile cylinder implant system" (IMZ)로 독일에서 가장 오래되고 많이 사용되어진 임플란트 중 하나이다. 이 임플란트에 관한 장기적 성공률과 생존률에 대한 연구는 대개 80% 이상을 보고하고 있다. 그러나, 연세대학교 치과병원 치주과에서 식립된 83개의 임플란트에서는 이전의 연구와는 다른 결과를 나타내었다. 1. IMZ 임플란트의 생존률은 67.5% 였다. 2. 변연 치조골 소실에 대한 성공 기준을 적용한 결과 성공률은 49.4%로 나타났다. 3. 발거된 총 27개의 임플란트 중에서 임플란트 주위 골소실을 가지는 경우는 17개, 내부구조 파절은 4개, 식립체 파절은 5개로 보고되었다. 4. 10년 이상 생존된 임플란트에서 변연골 소실의 평균치는 2.82mm였다. IMZ 임플란트는 장기적으로 높은 실패율을 보고하였다. 이는 cylindrical design, titanium plasma flame spray coating, prosthodontic complication 등의 요소에 기인한 것으로 사료된다. 임플란트는 그 형태, 표면 처리 등 여러 가지 요인들에 의해 실패가 나타날 수 있으며 본 연구를 통해 임플란트의 개발 및 선택에 바탕이 될 수 있을 것으로 생각된다.

이중 게이트 절연막을 가지는 실리콘 전계방출 어레이 제작 및 특성 (Fabrication and characterization of silicon field emitter array with double gate dielectric)

  • 이진호;강성원;송윤호;박종문;조경의;이상윤;유형준
    • 한국진공학회지
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    • 제6권2호
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    • pp.103-108
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    • 1997
  • 본 연구에서는 2단계 실리콘 건식식각 공정과 게이트 절연막으로 열산화막과 tetraethylorthosilicate(TEOS) 산화막의 이중막을 사용하고, 스핀-온-그래스 (Spin-on-glass:SOG) 에치백(etch-back) 공정에 의하여 게이트를 제작하는 새로운 방법을 통하여 실리콘 전계방출소자를 제작하고 그 특성을 분석하였다. 게이트 절연막의 누설전류 를 감소시키면서 팁과 게이트의 간격을 줄이는 구조인 이중 게이트 절연막을 형성하기 위하 여 팁 첨예화 산화 공정후 낮은 점도의 감광막(photo resist)을 시료에 도포한 후, $O_2$ 플라 즈마 에싱(ashing)하는 공정을 채택하였다. 이러한 공정으로 제작된 에미터 팁의 높이와 팁 반경은 각각 1.1$\mu\textrm{m}$와 100$\AA$정도이었으며, 256개 팁 어레이에서 전계방출의 문턱전압은 40V 이하이었다. 60V의 게이트전압에서 23$\mu\textrm{A}$(즉, 90nA/팁)의 높은 아노드 전류를 얻을 수 있었 다. 이때, 게이트 전류는 아노드전류의 약0.1%이하였다. 개발된 공정기술로 게이트 개구도 크게 감소시켰을 뿐 아니라, 게이트 누설전류를 현저히 감소시켰다.

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한국인 태아 조기질의 미세구조에 관한 연구 (The Fine Structure of Human Fetal Nail Matrix)

  • 손형선;최재권;정윤영;배춘상
    • Applied Microscopy
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    • 제26권1호
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    • pp.79-93
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    • 1996
  • The differentiation of nail matrix and fine structure of matrix cells were studied with light and electron microscope using specimens from nails of thumb finger in Korean fetuses 14 to 24 weeks old. Fetal nail matrix consisted of two horizontal layers, thicker ventral and thinner dorsal matrices, originating from invagination of epidermis in proximal nail field. Matrix being generally thicker in its distal region than the apex became gradually thickened with increase of the fetal age. Each matrix consisted of single layer of basal cells and multiple layers of squamous cells which are arranged close to and parallel to the central axis of the nail mairix. The process of keratinization of fetal nail matrix was noted to be occured concurrently in the ventral and dorsal matrices along the central axis of matrix toward distal and dorsal direction. Squamous cells became matured with accumulation of tonofilaments, increase of keratohyalin granules, discharge of membrane coating granules, and narrowing of intercellular spaces, thickening of plasma membrane and finally being transformed into horny cells of nail plate. Horny cells of nail plate filled with fibrous elements in the electron dense amorphous substance. These findings of keratinization process of fetal nail matrix appeared to be similar to those of keratinization in epidermis and inner root sheath of the hair. In the nail matrix, however, corresponding region to the keratogenous zone of growing hair follicle was not observed. Vacuolated squamous cells of nail matrix seen on light microscopy was considered to be artefactual product, but squamous cells with condensed small nuclei rarely found adjacent nail plate was considered to be one of the squamous cells with unknown function. Proximal end of nail plate was observed on dorsal surface of nail field distal to the proximal nail fold at 14 and 16 weeks old human embryos. Proximal prolongation of the proximal end of nail plate was occured with advancing fetal age and afterward 21 weeks nail plate invaded into nail matrix. Melanin granule containing cells and Merkel cells were present only on the basal layer of dorsal nail matirx.

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PECVD법에 의해 증착된 Ti-B-C코팅막 내의 보론함량과 증착온도에 따른 미세구조 및 기계적 물성의 변화 (The Effect of Boron Content and Deposition Temperature on the Microstructure and Mechanical Property of Ti-B-C Coating Prepared by Plasma-enhanced Chemical Vapor Deposition)

  • 옥정태;송풍근;김광호
    • 한국표면공학회지
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    • 제38권3호
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    • pp.106-111
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    • 2005
  • Ternary Ti-B-C coatings were synthesized on WC-Co and Si wafers substrates by a PECVD technique using a gaseous mixture of $TiCl_4,\;BCl_3,\;CH_4,\;Ar,\;and\; H_2$. The effects of deposition variables such as substrate temperature, gas ratio, $R_x=[BCl_3/(CH_4+BCl_3)]$ on the microstructure and mechanical properties of Ti-B-C coatings were investigated. From our instrumental analyses, the synthesized Ti-B-C coatings was confirmed to be composites consisting of nanocrystallites TiC, quasi-amorphous TiB2, and amorphous carbon at low boron content, on the contrary, nanocrystallites $TiB_2$, quasi-amorphous TiC, and amorphous carbon at relatively high boron content. The microhardness of the Ti-B-C coatings increased from $\~23 GPa$ of TiC to $\~38 GPa$ of $Ti_{0.33}B_{0.55}C_{0.11}$ coatings with increasing the boron content. The $Ti_{0.33}B_{0.55}C_{0.11}$ coatings showed lower average friction coefficient of 0.45, in addition, it showed relatively better wear behavior compared to other binary coatings of $TiB_2$ and TiC. The microstruture and microhardness value of Ti-B-C coatings were largely depend on the deposition temperature.

Chemical Doping of $TiO_2$ with Nitrogen and Fluorine and Its Support Effect on Catalytic Activity of CO Oxidation

  • Chakravarthy, G. Kalyan;Kim, Sunmi;Kim, Sang Hoon;Park, Jeong Young
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.142.2-142.2
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    • 2013
  • The effect of substrate on catalytic activity of CO oxidation with transition metal Platinum nanoparticles on doped and undoped TiO2 was investigated. Titanium dioxide was doped chemically with non-metal anions including nitrogen and fluorine. Undoped TiO2 was synthesized via simple conventional sol-gel route. Thin films of titania were developed by spin coating technique and the characterization techniques SEM, XRD, UV-Vis Absorption Spectroscopy and XPS were carried out to examine the morphology of films, crystal phase, crystallites, optical properties and elemental composition respectively. XPS analysis from doped TiO2 confirmed that the nitrogen site were interstitial whereas fluorine was doped into TiO2 lattice substitutionally. Catalytic activity systems of Pt/doped-TiO2 and Pt/undoped-TiO2 were fabricated to reveal the strong metal-support interaction effect during catalytic activity of CO oxidation reactions. By arc plasma deposition technique, platinum nanoparticles with mean size of 2.7 nm were deposited on the thin films of doped and undoped titanium dioxide. The CO oxidation was performed with 40 Torr CO and 100 Torr O2 with 620 Torr He carrier gas. Turn over frequency was observed two to three folds enhancement in case of Pt/doped TiO2 as compared to Pt/TiO2. The electronic excitation and the oxygen vacancies that were formed with the doping process were the plausible reasons for the enhancement of catalytic activity.

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Diamond-Like Carbon Films Deposited by Pulsed Magnetron Sputtering System with Rotating Cathode

  • Chun, Hui-Gon;You, Yong-Zoo;Nikolay S. Sochugov;Sergey V. Rabotkin
    • 한국표면공학회지
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    • 제36권4호
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    • pp.296-300
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    • 2003
  • Extended cylindrical magnetron sputtering system with rotating 600-mm long and 90-mm diameter graphite cathode and pulsed power supply voltage generator were developed and fabricated. Time-dependent Langmuir probe characteristics as well as carbon films thickness were measured. It was shown that ratio of ions flux to carbon atoms flux for pulsed magnetron discharge mode was equal to $\Phi_{i}$ $\Phi$sub C/ = 0.2. It did not depend on the discharge current in the range of $I_{d}$ / = 10∼60 A since both the plasma density and the film deposition rate were found approximately proportional to the discharge current. In spite of this fact carbon film structure was found to be strongly dependent on the discharge current. Grain size increased from 100 nm at $I_{d}$ = 10∼20 A to 500 nm at $I_{d}$ = 40∼60 A. To deposit fine-grained hard nanocrystalline or amorphous carbon coating current regime with $I_{d}$ = 20 A was chosen. Pulsed negative bias voltage ($\tau$= 40 ${\mu}\textrm{s}$, $U_{b}$ = 0∼10 ㎸) synchronized with magnetron discharge pulses was applied to a substrate and voltage of $U_{b}$ = 3.4 ㎸ was shown to be optimum for a hard carbon film deposition. Lower voltages were not sufficient for amorphization of a growing graphite film, while higher voltages led to excessive ion bombardment and effects of recrystalization and graphitization.

해안에 인접한 원자력발전소에 적용하기 위한 체결볼트의 TiN박막 코팅처리를 한 체결볼트의 방식특성 (Anti-Corrosion Properties of TiN-Coated Bolt for Application to Nuclear Power Plants Located Near Coastal Areas)

  • 이수빈;이진우;박수정;김윤해
    • 한국해양공학회지
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    • 제30권5호
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    • pp.356-360
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    • 2016
  • Recently, the lifetime extension of nuclear power plants has been considered. Thus, it is necessary to consider facility safety management and economic management. However, when the bolts in nuclear power plants are replaced and the turbines of nuclear power plant are disassembled, numerous problems are found in relation to stuck bolts in clamping parts. In order to solve these problems, a hybrid vacuum chamber was first designed and manufactured. It can perform arc ion plating and sputtering, which were used to deposit Ti/TiN on an A913 B7 bolt. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses were conducted to determine the composition and characteristics of the bolt, and tests were conducted to determine how long the bolt could endure under various conditions in a nuclear power plant. The SEM and XRD results clearly showed a continual and even coating layer. When this TiN-coated bolt is used in a nuclear power plant, the lifetime can be extended compared to a conventional bolt, but it is necessary to determine what additional properties are required.

Hard TiN Coating by Magnetron-ICP P $I^3$D

  • Nikiforov, S.A.;Kim, G.H.;Rim, G.H.;Urm, K.W.;Lee, S.H.
    • 한국표면공학회지
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    • 제34권5호
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    • pp.414-420
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    • 2001
  • A 30-kV plasma immersion ion implantation setup (P $I^3$) has been equipped with a self-developed 6'-magnetron to perform hard coatings with enhanced adhesion by P $I^3$D(P $I^3$ assisted deposition) process. Using ICP source with immersed Ti antenna and reactive magnetron sputtering of Ti target in $N_2$/Ar ambient gas mixture, the TiN films were prepared on Si substrates at different pulse bias and ion-to-atom arrival ratio ( $J_{i}$ $J_{Me}$ ). Prior to TiN film formation the nitrogen implantation was performed followed by deposition of Ti buffer layer under A $r^{+}$ irradiation. Films grown at $J_{i}$ $J_{Me}$ =0.003 and $V_{pulse}$=-20kV showed columnar grain morphology and (200) preferred orientation while those prepared at $J_{i}$ $J_{Me}$ =0.08 and $V_{pulse}$=-5 kV had dense and eqiaxed structure with (111) and (220) main peaks. X-ray diffraction patterns revealed some amount of $Ti_{x}$ $N_{y}$ in the films. The maximum microhardness of $H_{v}$ =35 GN/ $M^2$ was at the pulse bias of -5 kV. The P $I^3$D technique was applied to enhance wear properties of commercial tools of HSS (SKH51) and WC-Co alloy (P30). The specimens were 25-kV PII nitrogen implanted to the dose 4.10$^{17}$ c $m^{-2}$ and then coated with 4-$\mu\textrm{m}$ TiN film on $Ti_{x}$ $N_{y}$ buffer layer. Wear resistance was compared by measuring weight loss under sliding test (6-mm $Al_2$ $O_3$ counter ball, 500-gf applied load). After 30000 cycles at 500 rpm the untreated P30 specimen lost 3.10$^{-4}$ g, and HSS specimens lost 9.10$^{-4}$ g after 40000 cycles while quite zero losses were demonstrated by TiN coated specimens.s.

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PEI가 코팅된 CVD 그래핀의 저항 온도 계수 측정 (Measurements of the Temperature Coefficient of Resistance of CVD-Grown Graphene Coated with PEI)

  • 임수묵;석지원
    • Composites Research
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    • 제36권5호
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    • pp.342-348
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    • 2023
  • 최근 웨어러블 소자를 이용한 신체와 주변 온도의 실시간 모니터링에 대한 수요가 급격히 증가하고 있다. 그래핀 기반 써미스터가 고성능 유연 온도 센서로 개발되어 왔다. 본 연구에서는 단일층 그래핀의 온도 측정 성능을 개선하기 위하여 표면에 polyethylenimine(PEI)를 코팅하여 저항 온도 계수(TCR)를 조절하였다. 화학기상증착법(CVD)에 의해 합성한 단일층 그래핀은 습식 전사 공정을 통해 원하는 기판에 전사되었다. PEI에 의한 계면 도핑을 유도하기 위하여, 소수성의 그래핀 표면을 산소 플라즈마 처리를 통해 결함을 최소화하면서 친수성으로 제어하였다. PEI 도핑 효과를 전계효과트랜지스터(FET)를 이용하여 확인하였다. PEI 도핑에 의해서 CVD 그래핀의 TCR 값이 30~50℃의 온도 범위에서 -0.49(±0.03)%/K로 향상된 것을 확인하였다.