• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1533-1536
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• 2001

To grow the diamond films by using RF-MW two step process, at first, diamond seeds were deposited on silicon substrate by RF plasma CVD, and then a diamond layer grown by MW plasma CVD on the seeds. The grain-size of diamond films deposited by using RF-MW two step process was smaller and denser and also, crystallity of diamond film was better than those of the MW plasma CVD process. The deposited diamond films were analyzed by SEM(scanning electron microscophy), XRD (x-ray diffraction), and Raman spectroscopy.

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.45-50
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• 2004

Highly oriented diamond (HOD) films in polycrystalline can be grown on the (100) silicon substrate by microwave plasma CVD. Bias enhanced nucleation (BEN) method was adopted for highly oriented diamond deposition with high nucleation density and uniformity. The substrate was biased up to -250[Vdc] and bias time required for forming a diamond film was varied up to 25 minutes. Diamond was deposited by using $\textrm{CH}_4$/CO and $H_2$ mixture gases by microwave plasma CVD. Nucleation density and degree of orientation of the diamond films were studied by SEM. Thermal conductivity of the diamond films was ∼5.27[W/cm.K] measured by $3\omega$ method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.246-249
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• 1997

Diamond thin films were deposited on Si wafer from a mixture of CE$_4$ and H$_2$ by RF Plasma CVD. The films were de77sited under the following conditions : discharge power of 500w, H$_2$ flow rate of 30sccm, chanter pressure of 20∼50Torr, and CH$_4$ concentration of 0.5∼2%. The deposition time was 30∼40 hours because of low growth rate. The deposited films were characterized by Scanning Electron Microscopy and X-ray Diffraction method.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.157-158
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• 2007

Tin oxide films were successfully crystallized without additional heating by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD). The degree of crystallization was affected by the ICP power, hydrogen flow and ion bombardment induced by negative substrate bias. The substrate temperature was increased only up to $150^{\sim}180^{\circ}C$ by plasma heating, which suggests that the formation of $SnO_2$ crystalswas caused by enhanced reactivity of precursors in high density plasma. The hardness of deposited tin oxide films ranged from 5.5 to 11GPa at different hydrogen flow rates.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.73-73
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• 2007

Amorphous BON and Si-DLC thin films were synthesized by the RF plasma enhanced CVD method, and their oxidation behavior was studied up to $500^{\circ}C$ in air. The oxidation of both films was accompanied by evaporation of volatile species. The oxidation of BON film was preceded by nitrogen escape from the film, and oxygen penetration into the film. The oxidation of Si-DLC film was preceded by carbon escape probably as CO or $CO_2$from the film, and oxygen penetration into the film. The inwardly transported oxygen simply stayed in the oxidized BON and Si-DLC thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.105-105
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• 2012

We have developed a photoemission-assisted plasma-enhanced chemical vapor deposition (PAPE-CVD) [1,2], in which photoelectrons emitting from the substrate surface irradiated with UV light ($h{\nu}$=7.2 eV) from a Xe excimer lamp are utilized as a trigger for generating DC discharge plasma as depicted in Fig. 1. As a result, photoemission-assisted plasma can appear just above the substrate surface with a limited interval between the substrate and the electrode (~10 mm), enabling us to suppress effectively the unintended deposition of soot on the chamber walls, to increase the deposition rate, and to decrease drastically the electric power consumption. In case of the deposition of DLC gate insulator films for the top-gate graphene channel FET, plasma discharge power is reduced down to as low as 0.01W, giving rise to decrease significantly the plasma-induced damage on the graphene channel [3]. In addition, DLC thickness can be precisely controlled in an atomic scale and dielectric constant is also changed from low ${\kappa}$ for the passivation layer to high ${\kappa}$ for the gate insulator. On the other hand, negative electron affinity (NEA) of a hydrogen-terminated diamond surface is attractive and of practical importance for PAPECVD, because the diamond surface under PAPE-CVD with H2-diluted (about 1%) CH4 gas is exposed to a lot of hydrogen radicals and therefore can perform as a high-efficiency electron emitter due to NEA. In fact, we observed a large change of discharge current between with and without hydrogen termination. It is noted that photoelectrons are emitted from the SiO2 (350 nm)/Si interface with 7.2-eV UV light, making it possible to grow few-layer graphene on the thick SiO2 surface with no transition layer of amorphous carbon by means of PAPE-CVD without any metal catalyst.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1532-1535
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• 1996

Diamond-like carbon (DLC) films have been prepared by a widely-used plasma CVD with an rf (13.56MHz) plasma of $CH_4$ gas. The hydrogen incorporated in DLC films plays an important role of determining the film properties, but its exact role has not been clear. In this study, the effect of hydrogen on the film properties of DLC has been examined by adding the hydrogen gas to the $CH_4$ gas during deposition and by exposing the prepared film to the hydrogen plasma. As the content of additive hydrogen gas increases, the density and hardness of the film increase, but the growth rate decreases. The FT-IR spectroscopy results show that the number of C-H bonds decreases with increasing the hydrogen gas. Also, the variation in the position of "G" and "D" peaks due to additive hydrogen, which has been measured by the Raman spectroscopy, indicates of $sp^3$ fraction.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.4
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• pp.585-589
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• 2012

The characteristics of interface layer and the effect of mole fraction of inlet gas mixture($B_2H_6/H_2/N_2/TiCl_4$) on the microstructure of Ti(B,N) films were studied by microwave plasma hot filament CVD process. Ti(B,N) films were deposited on a substrate(STD-61) to develop a high performance of resistance wear coating tool. Ti(B,N) films were obtained at a gas pressure of 1 torr, bias voltage of 300 V and substrate temperature of $480^{\circ}C$ in $B_2H_6/H_2/N_2/TiCl_4$gas system. It was found that TiN, $TiB_2$, TiB and hexagonal boron nitride(h-BN) phases exist in thin layer on the STD-61.

• Journal of the Korean Society for Heat Treatment
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• v.23 no.2
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• pp.75-82
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• 2010

A new advanced combined PVD/CVD technique of DLC film deposition has been developed. Deposition of a DLC film was carried out using a pulsed carbon arc discharge in vapor hydrocarbon atmosphere. The arc plasma enhancing CVD process promotes dramatic increase in the deposition rate and decrease of compressive stress as well as improvement of film thickness uniformity compared to that obtained with a single PVD pulsed arc process. The optical spectroscopy investigation reveals great increase in radiating components of $C_2$ Swan system molecular bands due to acetylene molecules decomposition. AFM, Raman spectroscopy, XPS and nano-indentation were used to characterize DLC films. The method ensures obtaining a new superhard DLC nano-material for deposition of protective coatings onto various industrial products including those used in medicine.

• Applied Chemistry for Engineering
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• v.5 no.1
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• pp.16-23
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• 1994

In an argon thermal plasma CVD system diamond of metastable state was synthesized on molydenum substrate and concentration ratio of methane to hydrogen. Diamond was relatively well obtained when surface temperature of substrate was $890^{\circ}C$ and concentration of methane ratio was 0.5 percents.