• Title/Summary/Keyword: Planer

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A Study on the Fatigue Life of Planer Miller Spindle System Using nCode (nCode를 이용한 플래너 밀러 주축계 구조물의 피로수명에 관한 연구)

  • Kim, Chae-Sil;Park, Pil-Geo;Lee, Seong-Won
    • Journal of the Korean Society of Industry Convergence
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    • v.25 no.6_2
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    • pp.1091-1095
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    • 2022
  • Dynamic stability of the main spindle system shall be ensured when operating the planer miller for remanufacturing the planer miller. This paper explains the analysis process that determines the stability of the planer miller spindle system in the design stage using ANSYS, an analysis program. First, the dynamic stability of the main spindle system is verified through risk speed analysis in the rated RPM range of the planer miller through ANSYS Modal Analysis, and second, the stability and durability of the main spindle system are verified through ANSYS nCode Analysis.

Sinusoidal Oscillator Using Planer SCR (Planer SCR에 의한 정자파 발진기)

  • 박병철
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.11 no.2
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    • pp.40-45
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    • 1974
  • It is indicated that in SCR the anode current can be controlled by ajusting the gate voltage when the magnitude of anode current lies in the range of 10-2 to 10-3 Amperes. This fact is applied to make a simple sinusoidal oscillator circuit which has the negative resistance characteristics in its gate circuit by inserting a proper resistor into its cathode circuit.

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High Voltage IGBT Improvement of Electrical Characteristics (고내압 IGBT의 전기적 특성 향상에 관한 연구)

  • Ahn, Byoung-Sup;Chung, Hun-Suk;Jung, Eun-Sik;Kim, Seong-Jong;Kang, Ey-Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.3
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    • pp.187-192
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    • 2012
  • Development of new efficient, high voltage switching devices with wide safe operating area and low on-state losses has received considerable attention in recent years. One of those structures with a very effective geometrical design is the trench gate Insulated Gate Bipolar Transistor(IGBT).power IGBT devices are optimized for high-voltage low-power design, decided to aim. Class 1,200 V NPT Planer IGBT, 1,200 V NPT Trench IGBT for class has been studied.

Characteristics of Latch-up Current of the Dual Gate Emitter Switched Thyristor (Dual Gate Emitter Switched Thyristor의 Latch-up 전류 특성)

  • 이응래;오정근;이형규;주병권;김남수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.8
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    • pp.799-805
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    • 2004
  • Two dimensional MEDICI simulator is used to study the characteristics of latch-up current of Dual Gate Emitter Switched Thyristor. The simulation is done in terms of the current-voltage characteristics, latch-up current density, ON-voltage drop and electrical property with the variations of p-base impurity concentrations. Compared with the other power devices such as MOS Controlled Cascade Thyristor(MCCT), Conventional Emitter Switched Thyristor(C-EST) and Dual Channel Emitter Switched Thyristor(DC-EST), Dual Gate Emitter Switched Thyristor(DG-EST) shows to have the better electrical characteristics, which is the high latch-up current density and low forward voltage-drop. The proposed DG-EST which has a non-planer p-base structure under the floating $N^+$ emitter indicates to have the better characteristics of latch-up current and breakover voltage.

Inverted structure perovskite solar cells: A theoretical study

  • Sahu, Anurag;Dixit, Ambesh
    • Current Applied Physics
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    • v.18 no.12
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    • pp.1583-1591
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    • 2018
  • We analysed perovskite $CH_3NH_3PbI_{3-x}Cl_x$ inverted planer structure solar cell with nickel oxide (NiO) and spiroMeOTAD as hole conductors. This structure is free from electron transport layer. The thickness is optimized for NiO and spiro-MeOTAD hole conducting materials and the devices do not exhibit any significant variation for both hole transport materials. The back metal contact work function is varied for NiO hole conductor and observed that Ni and Co metals may be suitable back contacts for efficient carrier dynamics. The solar photovoltaic response showed a linear decrease in efficiency with increasing temperature. The electron affinity and band gap of transparent conducting oxide and NiO layers are varied to understand their impact on conduction and valence band offsets. A range of suitable band gap and electron affinity values are found essential for efficient device performance.

Electric Fuel Sender Apparatus for the Vehicles Using CPW Transmission Line (CPW 전송선을 이용한 전자식 자동차용 연료 센더 장치)

  • Son Tae-Ho
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.4 s.107
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    • pp.380-386
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    • 2006
  • Electric fuel sender fur the vehicle fuel gauge system was designed and fabricated based on the CPW(Co-Planer Waveguide) transmission line theory. It is applied on this system that characteristic impedance of RF transmission line can be varied by the surrounded material of the line. By the characteristic impedance owing the level of gasoline or diesel fuel in vehicle fuel tank, CPW line has corresponding reflected signal as much as changed impedance. Detected signal is amplified, and delivered to fuel indicator into cluster unit on dash board. Conventional floating mechanical buoy level gauge has several defects as low reliability and high break down rate by mechanical operation, and has not good linearity for the fuel level difference. CPW line with electric circuits are constructed on 1.6 mm thickness epoxy substrate, and measurement shows that this system has more accurate level and better linearity than conventional mechanical system. New electric fuel sender which has good productivity with long lifetime and low-in-cost by the SMT chip assembling could be replaced this system with conventional floating buoy system.

Multipliers on the dirichlet space $D(Omega)$

  • Nah, Young-Chae
    • Communications of the Korean Mathematical Society
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    • v.10 no.3
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    • pp.633-642
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    • 1995
  • Recently S. Axler proved that every sequence in the unit disk U converging to the boundary contains an interpolating subsequence for the multipliers of the Dirichlet space D(U). In this paper we generalizes Axler's result to the finitely connected planer domains such that the Dirichlet spaces are contained in the Bergman spaces.

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