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http://dx.doi.org/10.4313/JKEM.2004.17.8.799

Characteristics of Latch-up Current of the Dual Gate Emitter Switched Thyristor  

이응래 (충북대학교 전기전자공학부)
오정근 (충북대학교 전기전자공학)
이형규 (충북대학교 전기전자공학)
주병권 (한국과학기술연구원 마이크로시스)
김남수 (충북대학교 전기전자공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.17, no.8, 2004 , pp. 799-805 More about this Journal
Abstract
Two dimensional MEDICI simulator is used to study the characteristics of latch-up current of Dual Gate Emitter Switched Thyristor. The simulation is done in terms of the current-voltage characteristics, latch-up current density, ON-voltage drop and electrical property with the variations of p-base impurity concentrations. Compared with the other power devices such as MOS Controlled Cascade Thyristor(MCCT), Conventional Emitter Switched Thyristor(C-EST) and Dual Channel Emitter Switched Thyristor(DC-EST), Dual Gate Emitter Switched Thyristor(DG-EST) shows to have the better electrical characteristics, which is the high latch-up current density and low forward voltage-drop. The proposed DG-EST which has a non-planer p-base structure under the floating $N^+$ emitter indicates to have the better characteristics of latch-up current and breakover voltage.
Keywords
DG-EST; Latch-up current; ON-state voltage drop; Non-planer p-base;
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