Characteristics of Latch-up Current of the Dual Gate Emitter Switched Thyristor
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이응래
(충북대학교 전기전자공학부)
오정근 (충북대학교 전기전자공학) 이형규 (충북대학교 전기전자공학) 주병권 (한국과학기술연구원 마이크로시스) 김남수 (충북대학교 전기전자공학부) |
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The dual gate emitter sitched thyristor (DG-EST)
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DOI ScienceOn |
2 |
MOS-Controlled Thyristors
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3 |
The insulated gate transistor
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4 |
Characteristics of the Emitter Switched Thyristor
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DOI ScienceOn |
5 |
IGBT Mode Turn-off Thyristor(IGTT) Fabricated on SOI Substrate
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6 |
The dual gate EST : a new MOS-gated thyristor structure
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7 |
A new concept for high voltage MCCT with no J-FET resistance by using a very thin wafer
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스냅-백 현상이 억제된 새로운 구조의 Emitter Switched Thyristor
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10 |
A study of EST`s short circuit SOA
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11 |
A new insulated-gate thyristor with turn-off achieved by controlling the base-resistance
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DOI ScienceOn |
12 |
A new MOS-Gated Power Thyristor structure with turn-off achieved by controlling the base resistance
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