• Title/Summary/Keyword: Planarity

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A Study on the Conception of Planarity in Modern Art (근대 건축에서의 '평면성' 개념)

  • Lee, Kwang-In
    • Journal of The Korean Digital Architecture Interior Association
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    • v.7 no.2
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    • pp.59-65
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    • 2007
  • This study is aimed to find out the conception of planarity in Modern Architecture. Some architecture historians such as Hildebrand and Schmarsow indicated the planarity by which new idea of space in architecture was made. The characteristics of the planar was embodied and developed through the proclamation of the ideology and their works in the avant-garde art movement of Cubism and Neoplasticism. The planarity in modern architecture was embodied from various aspects -the perception of space, the pictorial art and the metaphysics- by means of imaginary plane, superposition of planes, oscillation of plane, deconstruction of mass and elimination of natural color.

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Effects of chemical reaction on the polishing rate and surface planarity in the copper CMP

  • Kim, Do-Hyun;Bae, Sun-Hyuk;Yang, Seung-Man
    • Korea-Australia Rheology Journal
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    • v.14 no.2
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    • pp.63-70
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    • 2002
  • Chemical mechanical planarization (CMP) is the polishing process enabled by both chemical and mechanical actions. CMP is used in the fabrication process of the integrated circuits to achieve adequate planarity necessary for stringent photolithography depth of focus requirements. And recently copper is preferred in the metallization process because of its low resistivity. We have studied the effects of chemical reaction on the polishing rate and surface planarity in copper CMP by means of numerical simulation solving Navier-Stokes equation and copper diffusion equation. We have performed pore-scale simulation and integrated the results over all the pores underneath the wafer surface to calculate the macroscopic material removal rate. The mechanical abrasion effect was not included in our study and we concentrated our focus on the transport phenomena occurring in a single pore. We have observed the effects of several parameters such as concentration of chemical additives, relative velocity of the wafer, slurry film thickness or ash)tract ratio of the pore on the copper removal rate and the surface planarity. We observed that when the chemical reaction was rate-limiting step, the results of simulation matched well with the experimental data.

A Global Planarization of Interlayer Dielectric Using Chemical Mechanical Polishing for ULSI Chip Fabrication (화학기계적폴리싱(CMP)에 의한 층간절연막의 광역평탄화에 관한 연구)

  • Jeong, Hea-do
    • Journal of the Korean Society for Precision Engineering
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    • v.13 no.11
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    • pp.46-56
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    • 1996
  • Planarization technique is rapidly recognized as a critical step in chip fabrication due to the increase in wiring density and the trend towards a three dimensional structure. Global planarity requires the preferential removal of the projecting features. Also, the several materials i.e. Si semiconductor, oxide dielectric and sluminum interconnect on the chip, should be removed simultaneously in order to produce a planar surface. This research has investihgated the development of the chemical mechanical polishing(CMP) machine with uniform pressure and velocity mechanism, and the pad insensitive to pattern topography named hard grooved(HG) pad for global planarization. Finally, a successful result of uniformity less than 5% standard deviation in residual oxide film and planarity less than 15nm in residual step height of 4 inch device wafer, is achieved.

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Theoretical Study on the Geometric Property of Higher Fullerene C90 (Higher Fullerene C90의 기하학적 성질에 대한 이론적 연구)

  • Kwak, K.D.;Ha, Y.S.;Seo, M.R.
    • Applied Chemistry for Engineering
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    • v.10 no.6
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    • pp.881-884
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    • 1999
  • We have studied the other unit which is partial element in fullerene $C_{90}$. The energy of the higher fullerene increased by 5.6 kcal/mol for each $1.0{\beta}$ of planarity for the other units and increased by 11.0 kcal/mol for each $2C_1$ other unit at RHF/AM1 method. Therefore, we have known that the stable $C_{90}$ isomer do not have $C_1$ unit in other unit and have small planarity. The confirmable $C_{90}$ isomers by experiment satisfies these two conditions.

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Importance of Sulfonylimidazolidinone Motif of 4-Phenyl-1-arylsulfonylimidazolidinones for Their Cytotoxicity: Synthesis of 2-Benzoyl-4-phenyl[1,2,5]thiazolidine-1,1-dioxides and Their Cytotoxcity

  • Kim, Il-Whan;Lee, Chong-Kyo;Kim, Hae-Soo;Jung, Sang-Hun
    • Archives of Pharmacal Research
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    • v.26 no.1
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    • pp.9-14
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    • 2003
  • For probing the importance of planarity of imidazolidinone motif of 4-phenyl-1-(benzenesulfonyl)imidazolidinones 1 for their cytotoxicity, 4-phenyl-2-(benzoyl)[1,2,5]thiadiazolidine-1,1-dioxide (2a), 4-phenyl-2-(p-toluoyl)[1,2,5]thiadiazolidine-1,1-dioxide (2b), 4-phenyl-2-(phenylcarbamoyl)[1,2,5]thiadiazolidine-1,1-dioxide (3a), and 4-phenyl-2-(p-tolylcarbamoyl)[1,2,5]thiadiazolidine-1,1-dioxide (3b) were prepared along with their regioisomers (5a, 5b, 9a, 9b) and their cytotoxicity were measured against human lung carcinoma (A549), human colon carcinoma (COLO205), human ovarian cancer (SK-OV-3), human leukemic cancer (K562), and murine colon adenocarcinoma (Colon26) cell lines in vitro. All compounds prepared do not show any activity against all five cancer cell lines unlike 1. Compounds 1 possess planarity of imidazolidinone, especially in sulfonylurea moiety ($-SO_2$NHCONH-). However compounds 2 and 3 have nonplanar 5-membered ring, [1,2,5]thiadiazolidine-1,1-dioxides. Such structural differentiation might result in the loss of activity. Therefore the inactivity of 2 and 3 could also be an indication for the necessity of planarity of imidazolidinone ring of 1 for their cytotoxic activity.

Alternative Optimization Techniques for Shallow Trench Isolation and Replacement Gate Technology Chemical Mechanical Planarization

  • Stefanova, Y.;Cilek, F.;Endres, R.;Schwalke, U.
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.1
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    • pp.1-4
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    • 2007
  • This paper discusses two approaches for pre-polishing optimization of oxide chemical mechanical planarization (CMP) that can be used as alternatives to the commonly applied dummy structure insertion in shallow trench isolation (STI) and replacement gate (RG) technologies: reverse nitride masking (RNM) and oxide etchback (OEB). Wafers have been produced using each optimization technique and CMP tests have been performed. Dishing, erosion and global planarity have been investigated with the help of conductive atomic force microscopy (C-AFM). The results demonstrate the effectiveness of both techniques which yield excellent planarity without dummy structure related performance degradation due to capacitive coupling.

Chemical Mechanical Polishing Characteristics of PZT Thin Films (PZT 박막의 화학.기계적 연마 특성)

  • Seo, Yong-Jin;Lee, Woo-Sun
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.12
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    • pp.549-554
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    • 2006
  • In this paper we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity between electrode and ferroelectric film. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of PZT films. Removal rate, WIWNU% and surface roughness have been found to depend on slurry abrasive types and their hardness, especially, surface roughness and planarity were strongly depends on its pH value. A maximum in the removal rate is observed in the silica slurry, in contrast with the minimum removal rate occurs at ceria slurry. We found that the surface roughness of PZT films can be significantly reduced using the CMP technique.

Steric Effect on the Molecular Hyperpolarizabilities of β-Nitrostyrene Derivatives

  • 조봉래;제종태;김현수;전승준;송옥근;Wang, C. H.
    • Bulletin of the Korean Chemical Society
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    • v.17 no.8
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    • pp.693-695
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    • 1996
  • The steric effect on the first order hyperpolarizability of the β-nitrostyrene derivatives has been investigated by comparing the β values and the dihedral angles between the aryl and nitroalkenyl groups. In general the β value increased with the electron-donating ability of the substituent. The larger β value for 3,4-dimethoxy-β-nitrostyrene than that for p-methoxy-β-nitrostyrene has been attributed to the lower charge transfer energy for the former. The most striking substituent effect was observed in the β-methyl-β-nitrostyrene derivatives. Thus the β values for 3,4-dimethoxy- and p-methoxy derivatives of the latter decreased to near zero, probably because of the large distortion from planarity caused by the steric repulsion between the β-methyl and the aryl groups. The larger β value for p-dimethylamino-β-methyl-β-nitrostyrene has been interpreted with an increased electron-donating ability of the substituent and increased co-planarity.

Recognition of the Importance of Imidazolidinone Motif for Cytotoxicity of 4-Phenyl-1-arylsulfonylimidazolidinones Using Thiadiazolidine-1, 1-Dioxide Analogs

  • Kim, Il-Whan;Jung, Sang-Hun
    • Archives of Pharmacal Research
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    • v.25 no.4
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    • pp.421-427
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    • 2002
  • For probing the importance of planarity of imidazolidinone motif of 4-phenyl-1-(N-acylindoline-5-sulfonyl)imidazolidinones 1 for their cytotoxicity, 4-phenyl-1-(N-acylindoline-5-sulfonyl)[1,2,5]thiadiazolidine-1,1-dioxides 2 were prepared and their cytotoxicity were measured against human lung carcinoma (A549), human colon carcinoma (COLO205), human ovarian cancer (SK-OV-3), human leukemic cancer (K562), and murine colon adenocarcinoma (Colon26) cell lines in vitro. Although only carbonyl moiety of imidazolidinone ring was replaced with sulfonyl group, compounds 2 do not show any activity against all five cancer cell lines unlike 1. Therefore the planarity of imidazolidinone ring of 1 should be an important factor for their cytotoxic activity.