• Journal of Mechanical Science and Technology
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• 제18권5호
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• pp.789-797
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• 2004

The nanoscale sensing and manipulation have become a challenging issue in micro/nano-robotic applications. In particular, a feedback sensor-based manipulation is necessary for realizing an efficient and reliable handling of particles under uncertain environment in a micro/nano scale. This paper presents a piezoresistive MEMS cantilever for nanoscale force measurement in micro robotics. A piezoresistive MEMS cantilever enables sensing of gripping and contact forces in nanonewton resolution by measuring changes in the stress-induced electrical resistances. The calibration of a piezoresistive MEMS cantilever is experimentally carried out. In addition, as part of the work on nanomanipulation with a piezoresistive MEMS cantilever, the analysis on the interaction forces between a tip and a material, and the associated manipulation strategies are investigated. Experiments and simulations show that a piezoresistive MEMS cantilever integrated into a micro robotic system can be effectively used in nanoscale force measurements and a sensor-based manipulation.

• 센서학회지
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• 제32권1호
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• pp.44-50
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• 2023

In this study, a polydimethylsiloxane (PDMS)-based drag force-type flowmeter was fabricated using a graphite-carbon nanotube (CNT) composite as a piezoresistive material and evaluated. The device was in the form of a cantilever, which was composed of the soft material, PDMS, and fabricated using a mold manufactured by a three-dimensional printer. The cost-effective graphite was mixed with CNTs to serve as a piezoresistive material. The optimal mixing ratio was investigated, and the piezoresistive material formed using a graphite:PDMS:CNT ratio of 1.5:1:0.01 was adopted, which showed a stable output and a high sensitivity. Various forward and backward air flows in the range of 0-10 m/s were measured using the fabricated flowmeter, and both tensile and compression characteristics were evaluated. The measured results showed a stable output, with the resistance change gradually increasing with the air flow rate. Repeatability characteristics were also tested at a repeated air flow of 10 m/s, and the flowmeter responded to the applied air flow well. Consequently, the fabricated device has a high sensitivity and can be used as a flowmeter.

• Elastomers and Composites
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• 제48권1호
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• pp.76-84
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• 2013

압저항 효과(piezoresistive effect)는 가해진 외부 압력이나 힘에 의해 전기적 저항이 변하는 것을 말한다. 이러한 압저항 효과는 압력, 진동, 가속 등을 탐지하는 센서에 많이 이용되고 있다. 압저항 효과를 갖는 재료가 많지만 그 중에서도 특히, 전도성 충전제를 첨가한 고무 복합체는 충전제의 종류, 입자 크기, 입자 모양, 입자 종횡비(aspect ratio), 그리고 입자의 양 등을 조절하여 다양한 압력 범위에서의 압저항 효과를 발현할 수 있고, 고무를 기질로 사용함으로써 복합체에 탄성과 유연성을 줄 수 있기 때문에 많은 관심을 받고 있다. 본 논문에서는 압저항 효과의 기본원리 및 다양한 고무 복합체의 압저항 효과에 대해 알아본다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1422-1424
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• 1994

This paper deals with piezoresistive humidity sensor using polycrystalline silicon (Poly-Si ) with membrane in sensors of semiconductor. Poly-Si piezoresistors which have no temperature dependancy are deposited on silicon wafer, membrane is formed with micromachining technology, then polyimide is formed as a hygroscopic layer. Whereas the principle of conventional humidify sensors are based on the change in electrical properties of the material, the humidity induced volume change of a polyimide layer leads to a deformation of a silicon membrane in this case. This deformation is transformed into an output voltage by Poly-Si piezoresistive. Wheatstone bridge. Fabricated piezoresistive humidity sensors showed good linearity, response time, and long term stability.

• 한국전산구조공학회논문집
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• 제36권6호
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• pp.415-421
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• 2023

본 논문에서는 시멘트에 탄소나노튜브를 혼입하여 전기 전도성을 향상시킨 복합재료의 압저항 특성을 딥러닝 기반 트랜스포머 알고리즘을 적용하여 분석하였다. 훈련 데이터 확보를 위한 실험수행을 병행하였으며, 기존 연구문헌을 참조하여 배합설정, 시편제작, 화학조성 분석, 압저항 성능측정 실험을 수행하였다. 특히 본 연구에서는 탄소나노튜브 혼입 시편뿐 아니라 플라이애시를 바인더 대비 50% 대체한 시편에 대한 제작 및 성능평가를 함께 수행하여, 전도성 시멘트 복합재료의 압저항 특성 향상 가능성을 탐구하였다. 실험결과, 플라이애시 대체 바인더의 경우 보다 안정적인 압저항 특성결과가 관찰되었으며, 측정된 데이터의 80%를 이용하여 트랜스포머 모델을 훈련시키고 나머지 20%를 통해 검증하였다. 해석 결과는 실험적 측정과 대체로 부합하였으며, 평균 절대 오차 및 평균 제곱근 오차는 각각 0.069~0.074와 0.124~0.132을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.416-417
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• 2005

In this study, we optimized the process of Si anisotropy etching by combing tetramethyl ammonium hydroxide (TMAH) etching process with ultrasonic wave technology. New ultrasonic TMAH etching apparatus was developed and it was used for fabricating a $20{\mu}m$ thick diaphragm for Si piezoresistive pressure sensors. Based on comparison study on etch rate and surface flatness, it was observed that the Si anisotropy etching methode with new ultrasonic TMAH etching apparatus (at 40 kHz/ 500 watt) was superior to conventional etching methods with TMAH or TMAH+ammonium persulfate(AP) solutions.

• Smart Structures and Systems
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• 제29권2호
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• pp.351-359
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• 2022

The present study investigated the synergistic effects of carbon nanotube (CNT) and carbon black (CB) inclusions on the piezoresistive sensing behaviors of cementitious composites. Four different CNT and CB combinations were considered to form different conductive networks in the binder material composed of Portland cement and fly ash. The cement was substituted with fly ash at levels of 0 or 50% by the mass of binder. The specimens were cured up to 100 days to observe the variations of the electrical characteristics with hydration progress, and the piezoresistive sensing behaviors of the specimens were measured under cyclic loading tests. The fabricated specimens were additionally evaluated with flowability, resistivity and cyclic loading tests, and morphological analysis. The scanning electron microscopy and energy disperse X-ray spectroscopy test results indicated that CNT and CB inclusion induced synergistic formations of electrically conductive networks, which led to an improvement of piezoresistive sensing behaviors. Moreover, the incorporation of fly ash having Fe³⁺ components decreased the electrical resistivity, improving both the linearity of fractional changes in the electrical resistivity and reproducibility expressed as R² under cyclic loading conditions.

• 한국전기전자재료학회논문지
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• 제33권5호
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• pp.350-354
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• 2020

In this study, a pressure sensor for each displacement was fabricated based on the silicon-based pressure sensor obtained through simulation results. Wires were bonded to the pressure sensor, and a piezoresistive pressure sensor was inserted into the printed circuit board (PCB) base by directly connecting a micro-electro-mechanical system (MEMS) sensor and a readout integrated circuit (ROIC) for signal processing. In addition, to prevent exposure, a non-conductive liquid silicone was injected into the sensor and the entire ROIC using a pipette. The packaging proceeded to block from the outside. Performing such packaging, comparing simple contact with strong contact, and confirming that the measured pulse wavelength appears accurately.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.274-274
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• 2008

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-SiC/SOI pressure sensor presents a high-sensitivity and excellent temperature stability.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.350-351
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• 2006

Thick film mechanical sensors can be categorized into four main areas piezoresistive, piezoelectric, capacitive and mechanic tube. In this areas, the thick film strain gage is the earliest example of a primary sensing element based on the substrates. The latest thick film sensor is used various pastes that have been specifically developed for pressure sensor application. Some elastic materials exhibit a change in bulk resistivity when they are subjected to displacement by an applied pressure. This property is referred to as piezoresistivity and is a major factor influencing the sensitivity of a piezoresistive strain gage. The effect of thick film resistors was first noticed in the early 1970, as described by Holmes in his paper in 1973.