• Elastomers and Composites
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• 제48권1호
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• pp.76-84
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• 2013

압저항 효과(piezoresistive effect)는 가해진 외부 압력이나 힘에 의해 전기적 저항이 변하는 것을 말한다. 이러한 압저항 효과는 압력, 진동, 가속 등을 탐지하는 센서에 많이 이용되고 있다. 압저항 효과를 갖는 재료가 많지만 그 중에서도 특히, 전도성 충전제를 첨가한 고무 복합체는 충전제의 종류, 입자 크기, 입자 모양, 입자 종횡비(aspect ratio), 그리고 입자의 양 등을 조절하여 다양한 압력 범위에서의 압저항 효과를 발현할 수 있고, 고무를 기질로 사용함으로써 복합체에 탄성과 유연성을 줄 수 있기 때문에 많은 관심을 받고 있다. 본 논문에서는 압저항 효과의 기본원리 및 다양한 고무 복합체의 압저항 효과에 대해 알아본다.

• 센서학회지
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• 제11권4호
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• pp.191-199
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• 2002

This paper presents the design concept, theoretical investigation, and fabrication of a six-degree of freedom (6-DOF) turbulent flow micro sensor utilizing the piezoresistive effect in silicon. Unlike other flow sensors, which typically measure just one component of wall shear stress, the proposed sensor can independently detect six components of force and moment on a test particle in a turbulent flow. By combining conventional and four-terminal piezoresistors in Si (111), and arranging them suitably on the sensing area, the total number of piezoresistors used in this sensing chip is only eighteen, much fewer than the forty eight piezoresistors of the prior art piezoresistive 6-DOF force sensor.

• 대한전자공학회논문지SD
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• 제42권1호
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• pp.19-24
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• 2005

본 논문에서는 압저항 효과를 이용한 Si 압력센서 제작을 최적화하였다. Si 압저항형 압력센서의 제작공정에 있어서 압저항과 알루미늄 회로 패턴 이후에 Si 이방성 식각을 통하여 수율이 개선되었다. 압저항의 위치와 공정 파라메터는 각각 ANSYS와 SUPREME 시뮬레이터를 이용하여 결정하였다. Boron-depth 프로파일 측정으로부터 p-형 Si 압저항의 두께를 측정한 결과 SUPREME 시뮬레이션으로부터 얻은 결과와 잘 부합하였다. 다이아프램을 위한 Si 이방성 식각 공정은 암모늄 첨가제 AP(Ammonium persulfate)를 TMAH(Tetra-methyl ammonium hydroxide) 용액에 첨가함으로써 최적화되었다.

• Smart Structures and Systems
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• 제18권2호
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• pp.217-231
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• 2016

The present work aims to develop piezoresistive sensors of excellent piezoresistive response attributable to change in nanoscale structures of multi-wall carbon nanotube (MWNT) embedded in cement. MWNT was distributed in a cement matrix by means of polymer wrapping method in tandem with the ultrasonication process. DC conductivity of the prepared samples exhibited the electrical percolation behavior and therefore the dispersion method adopted in this study was deemed effective. The integrity of piezoresistive response of the sensors was assessed in terms of stability, the maximum electrical resistance change rate, and sensitivity. A composite sensor with MWNT 0.2 wt.% showed the lowest stability and sensitivity, while the maximum electrical resistance change rate exhibited by this sample was the highest (96 %) among others and even higher than those found in the literature. This observation was presumably attributed by the percolation threshold and the tunneling effect. As a result of the MWNT content (0.2 wt.%) of the sensor being near the percolation threshold (0.25 wt.%), MWNTs were close to each other to trigger tunneling in response of external loading. The sensor with MWNT 0.2 wt.% was able to maintain the repeatable sensing capability while sustaining a vehicular loading on road, demonstrating the feasibility in traffic flow sensing application.

• Journal of Information Processing Systems
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• 제19권2호
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• pp.173-188
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• 2023

To improve the shock-resistance of piezoresistive high-g accelerometer, we propose a design of piezoresistive high-g accelerometer. The accelerometer employs special-shaped proof masses system with a cross gap. Four tiny sensing beams are bonded above the cross gap. The expression of the deformation, natural frequency and damping is deduced, and the structural parameters are optimized. The accelerometer structure is simulated and verified by finite element method (FEM) simulation. The results show that the range of the accelerometer can reach 200,000 g, the natural frequency is 453.6 kHz, and the cross-axis sensitivity of X-axis and Y-axis is 0.25% and 0.11%, respectively, which can apply to the measurement of high shock. Contrastively, the cross-axis sensitivity of X-axis and Y-axis is respectively, reduced by 93.2% and 96.9%. The sensitivity of our accelerometer is 0.88 μV/g. It is of great value for the application of piezoresistive high-g accelerometer with high shock-resistance.

• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.102-113
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• 1995

일반적으로 단결정 실리콘은 거의 모든 전자소자의 재료로서 널리 사용되고 있으며 제조공정기술 또한 상당한 수준에 도달하고 있다. 최근에는 실리콘 자체의 우수한 압저항효과, 기계적 특성 그리고 반도체 제조공정을 이용한 미세가공기술인 마이크로머시닝을 이용하는 반도체 압력센서에 대한 연구가 활발히 진행되고 있다. 기계식 압력센서에 비해서 전기적 변화를 이용하는 반도체 압력센서에서는 소형, 저가격, 고신뢰성, 고감도, 다기능, 고분해, 고성능 및 집적화 등의 우수한 특성을 지니고 있다. 본고에서는 이러한 특성을 가지는 반도체 압력센서중 특히, 압저항형과 용량형 압력센서의 구조와 원리, 그리고 연구.개발동향 및 향후 전망에 관해서 기술하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.350-351
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• 2006

Thick film mechanical sensors can be categorized into four main areas piezoresistive, piezoelectric, capacitive and mechanic tube. In this areas, the thick film strain gage is the earliest example of a primary sensing element based on the substrates. The latest thick film sensor is used various pastes that have been specifically developed for pressure sensor application. Some elastic materials exhibit a change in bulk resistivity when they are subjected to displacement by an applied pressure. This property is referred to as piezoresistivity and is a major factor influencing the sensitivity of a piezoresistive strain gage. The effect of thick film resistors was first noticed in the early 1970, as described by Holmes in his paper in 1973.

• 대한기계학회논문집B
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• 제27권9호
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• pp.1248-1255
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• 2003

Pressure coefficient in a rotating discharge hole was measured to gain insight into the influence of rotation on the discharge characteristics of rotating discharge holes. Pressures inside the hole were measured by a telemetry system that had been developed by the authors. The telemetry system is characterized by the diversity of applicable sensor type. In the present study, the telemetry system was modified to measure static pressure using piezoresistive pressure sensors. The pressure sensor is affected by centrifugal force and change of orientation relative to the gravity. The orientation of sensor installation for minimum rotating effect and zero gravity effect was found out from the test. Pressure coefficients in a rotating discharge hole were measured in longitudinal direction as well as circumferential direction at various rotating speeds and three different pressure ratios. From the results, the behaviors of pressure coefficient that cannot be observed by a non-rotating setup were presented. It was also shown that the discharge characteristics of rotating discharge hole is much more influenced by the Rotation number irrespective of pressure ratio.

• 대한기계학회논문집A
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• 제31권4호
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• pp.417-424
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• 2007

This paper reports fabrication and characterization of a pressure sensor using a pitch-based carbon fiber. Pitch-based carbon fibers have been shown to exhibit the piezoresistive effect, in which the electric resistance of the carbon fiber changes under mechanical deformation. The main structure of pressure sensors was built by performing backside etching on a SOI wafer and creating a suspended square membrane on the front side. An AC electric field which causes dielectrophoresis was used for the alignment and deposition of a carbon fiber across the microscale gap between two electrodes on the membrane. The fabricated pressure sensors were tested by applying static pressure to the membrane and measuring the resistance change of the carbon fiber. The resistance change of carbon fibers clearly shows linear response to the applied pressure and the calculated sensitivities of pressure sensors are $0.25{\sim}0.35 and 61.8 ${\Omega}/k{\Omega}{\cdot}bar$ for thicker and thinner membrane, respectively. All these observations demonstrated the possibilities of carbon fiber-based pressure sensors.

• 센서학회지
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• 제32권6호
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• pp.470-474
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• 2023

In this study, a diaphragm-type pressure sensor was developed using multi-layer(four-layer) graphene produced at 1 nm thickness by thermally transferring single-layer graphene produced by chemical vapor deposition (CVD) to a 6" silicon wafer. By measuring the gauge factor, we investigated whether it was possible to produce a pressure sensor of consistent quality. As a result of the measurement, the pressure sensor using multilayer graphene showed linearity and had a gauge factor of about 17.5. The gauge factor of the multilayer graphene-based pressure sensor produced through this study is lower than that of doped silicon, but is more sensitive than a general metal sensor, showing that it can be sufficiently used as a commercialized sensor.