• Journal of Sensor Science and Technology
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• v.5 no.6
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• pp.25-34
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• 1996

In this paper, we have designed signal conditioning circuitry for piezoresistive pressure sensor. Signal conditioning circuitry consists of voltage reference circuit for sensor driving voltage and instrument amplifier for sensor signal amplification. Signal conditioning circuitry is simulated using HSPICE in a single poly double metal $1.5\;{\mu}m$ BiCMOS technology. Simulation results of band-gap reference circuit showed that temperature coefficient of $21\;ppm/^{\circ}C$ at the temperature range of $0\;{\sim}\;70^{\circ}C$ and PSRR of 80 dB. Simulation results of BiCMOS amplifier showed that dc voltage gain, offset voltage, CMRR, CMR and PSRR are outperformed to CMOS and Bipolar, but power dissipation and noise voltage were more improved in CMOS than BiCMOS and Bipolar. Designed signal conditioning circuitry showed high input impedance, low offset and good CMRR, therefore, it is possible to apply sensor and instrument signal conditioning circuitry.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.2
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• pp.83-88
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• 2015

In this paper, $2mm{\times}2mm$ sized piezoresistive accelerometers were designed and fabricated. Two kinds of accelerometers with different spring structure are designed. One is an accelerometer with 4 beam spring located in the center of the mass, the other is an accelerometer with 8 beam spring located in the vertices of the mass. The modal analysis of the accelerometers and the structural analysis were performed using ANSYS program. The former has the superior sensitivity characteristics of $21.38{\mu}V/V/g$ and the lower offset drift of $154.45ppm/^{\circ}C$ than the latter.

• Journal of Sensor Science and Technology
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• v.5 no.3
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• pp.17-24
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• 1996

In order to reduce the offset and its temperature drift by the different properties of the piezoresistors and the residual stress of the piezoresistive pressure sensor, a double Wheatstone-bridge pressure sensor was studied. Because the compensation bridge was arranged near by the pressure sensitive bridge, which have the similar offset component, reduction of the offset and its temperature drift was realized by the mathematical subtraction of the output of two bridges. It was configured the compensation of the offset and its temperature drift. By this compensation method, the offset and its temperature drift were reduced approximately 95% respectively. The sensitivity of the fabricated pressure sensor was $11.7\;mV/Vkg/cm^{-2}$ for $0.9\;kgfcm^{-2}$ full-scale pressure range.

• Journal of Sensor Science and Technology
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• v.30 no.6
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• pp.388-394
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• 2021

The conventional microelectromechanical system (MEMS) process has been used to fabricate sensors with high costs and high-volume productions. Emerging 3D printing can utilize various materials and quickly fabricate a product using low-cost equipment rather than traditional manufacturing processes. 3D printing also can produce the sensor using various materials and design its sensing structure with freely optimized shapes. Hence, 3D printing is expected to be a new technology that can produce sensors on-site and respond to on-demand demand by combining it with open platform technology. Therefore, this paper reviews three standard 3D printing technologies, such as Fused Deposition Modeling (FDM), Direct Ink Writing (DIW), and Digital Light Processing (DLP), which can apply to the sensor fabrication process. The review focuses on strain/load sensors having both sensing material features and structural features as well. NCPC (Nano Carbon Piezoresistive Composite) is also introduced as a promising 3D material due to its favorable sensing characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.987-993
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• 2001

In this paper, we presents the construction details and output characteristics of a thick film piezoresistive strain gage. The thick film was printed on the ceramic diaphragm back side by screen printing and cured at 850$^{\circ}C$. The strain distribution and deflection on ceramic diaphragm were performed with finite-element method(FEM tool ANSYS-5.3). Various thick film strain gage characteristics were analysed, including nonlinearity, hysteresis, stability and sensitivity of thick film strain gages.

• Journal of Sensor Science and Technology
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• v.16 no.2
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• pp.126-131
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• 2007

In this paper, we fabricated piezoresistive pressure sensor with dry etching technology which used ICP-RIE (inductively coupled plasma reactive ion etching) and etching delay technology which used SOI (silicon-on-insulator). Structure of the fabricated pressure sensor shows a square diaphragm connected to a frame which was vertically fabricated by dry etching process and a single-element four-terminal gauge arranged at diaphragm edge. Sensitivity of the fabricated sensor was about 3.5 mV/V kPa at 1 kPa full-scale. Measurable resolution of the sensor was not exceeding 20 Pa. The nonlinearity of the fabricated pressure sensor was less than 0.5 %F.S.O. at 1 kPa full-scale.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1978.1_1979.1
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• 2009

In this paper, we have proposed and demonstrated a tonometry sensor array for measuring arterial pulse pressure. A sensor module consists of 7 piezoresistive pressure sensor array. Wire-bonded connection was provided between silicon chip and lead frame. PDMS(poly-dimethylsiloxane) was coated on the sensor array to protect fragile sensor while faithfully transmitting the pressure of radial artery to the sensor. Tonometric pulse pressure can be measured by this packaged sensor array that provides the pressure value versus the output voltage.

• Journal of the Semiconductor & Display Technology
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• v.2 no.4
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• pp.19-22
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• 2003

In this paper, Si anisotropic etching characteristics of tetramethylammonium hydroxide (TMAH)/ammonium persulfate (AP) solutions were investigated to realize the optimum structure of a diaphragm for the piezoresistive pressure sensor application. Due to its low toxicity and its high compatibility with the CMOS processing, TMAH was used as Si anisotropic etchants. The variations of Si etch rate on the etching temperature, TMAH concentration, and etching time were obtained. With increasing the etching temperature and decreasing TMAH concentrations, the Si etch rate is increased while a significant non-uniformity exists on the etched surface because of formation of hillocks on the <100> surface. With the addition of AP to TMAH solution, the Si etch rate is increased and an improvement in flatness on the etching front is observed. The Si etch rate is also maximized with increasing the number of addition of AP to TMAH solution per one hour. The Si square diaphragms of 20$\mu\textrm{m}$ thickness and 100-400 $\mu\textrm{m}$ one-side length were fabricated successfully by adding AP of (5/6)g to 800 ml TMAH solution every 10 minutes.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.4
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• pp.417-424
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• 2007

This paper reports fabrication and characterization of a pressure sensor using a pitch-based carbon fiber. Pitch-based carbon fibers have been shown to exhibit the piezoresistive effect, in which the electric resistance of the carbon fiber changes under mechanical deformation. The main structure of pressure sensors was built by performing backside etching on a SOI wafer and creating a suspended square membrane on the front side. An AC electric field which causes dielectrophoresis was used for the alignment and deposition of a carbon fiber across the microscale gap between two electrodes on the membrane. The fabricated pressure sensors were tested by applying static pressure to the membrane and measuring the resistance change of the carbon fiber. The resistance change of carbon fibers clearly shows linear response to the applied pressure and the calculated sensitivities of pressure sensors are $0.25{\sim}0.35 and 61.8 ${\Omega}/k{\Omega}{\cdot}bar$ for thicker and thinner membrane, respectively. All these observations demonstrated the possibilities of carbon fiber-based pressure sensors.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1914-1915
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• 2007

The period and strength of the pulse on the radial artery are important physiological factors, and they have been used to diagnosis in both Western and Eastern countries for a long time and has been developed as a unique method of diagnosis at each countries. Recently, there are a lot of systems which can give diagnosis information by recording the pulse wave and analyzing the characteristics of the pulse shape. This study describes the Pulse-Wave Measurement System which is able to measure the pulse wave signal using piezoresistive sensor and the pulse wave signal measured by the developed system is transmitted to a computer on the basis of the USB Driver. It has finally shown the the pulse wave signal measured by the sender is appeared to the host PC in real time. The Pulse-Wave Measurement System used the piezoresistive sensor to measure the pulse wave signal and the differential amplifier(AD620) to amplify the pulse wave signal which is small signal. And it used the ADC to convert analog to digital for the measured analog signal and the interface with a computer. It transmitted the measured pulse signal through USB transmission module to the host computer and Labview tool shows it. This Pulse-Wave measurement system will afford comvenience of detecting pulse wave to user related to oriental medicine.