• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.30-35
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• 2004

PMW-PZT thick films of about $30{\mu}m$ thickness were fabricated on Pt/$TiO_2$/$SiN_x$Si substrate by the hybrid method of screen printing and PZT sol application. With the increase of the number of the sol application times, the sintered density and electrical properties of PMW-PZT thick films were evidently increased. For the PMW-PZT thick film with PZT sol application of 10-times, the dielectric constant ($\varepsilon_r$) was 745 at the frequency of 100 KHz and thepiezoelectric coefficient ($d_33$) was 155 pC/N at the applied pressure of 1 atm.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.3 s.180
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• pp.163-170
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• 2006

Thin films play an important role in many technological applications including microelectronic devices, magnetic storage media, MEMS and surface coatings. It is well known that a thin film's material properties can be very different front the corresponding bulk properties and thus there has been a strong need for the development of a miniature tester to measure the mechanical properties of a thin film. Two testers are designed and set up in small size of 62 mm width, 20 mm depth and 90-120 mm height to fit in a chamber of scanning electron microscope (SEM). One tester has a homemade 0.2 N load cell and a low-priced electromagnetic actuator. The other has a commercial 5 N load cell, a $52{\mu}m$ piezoelectric actuator and some novel grips. Two types of 3.5 microns thick polysilicon specimen are tested to prove the testers' applicability. The strain is measured by the two ways. Firstly, it is measured by an ISDG system in the atmosphere far the reference. Secondly, the same test is repeated in a SEM chamber to monitor the strain as an in-situ experiment. The strain is evaluated by observing the gap change between two markers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.159-163
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• 2005

This paper gives characterization of ZnO thin film deposited by RF magnetron sputtering method, which is concerned in deposition process and device fabrication process, to fabricate solidly mounted resonator(SMR)-type film bulk acoustic resonator(FBAR). A piezoelectric layer of 1.1${\mu}{\textrm}{m}$ thick ZnO thin films were grown on thermally oxidized SiO$_2$(3000 $\AA$)/Si substrate layers by RF magnetron sputtering at the room temperature. The highly c-axis oriented ZnO thin film was obtained at the conditions of 265 W of RF power, 10 mtorr of working pressure, and 50/50 of Ar/O$_2$ gas ratio. The piezoelectric-active area was 50 ${\mu}{\textrm}{m}$${\times}$50${\mu}{\textrm}{m}$, and the thickness of ZnO film and Al-3 % Cu electrode were 1.4 ${\mu}{\textrm}{m}$ and 180${\mu}{\textrm}{m}$, respectively. Its series and parallel frequencies appeared at 2.128 and 2.151 GHz, respectively, and the qualify factor of the resonator was as high as 401.8$\pm$8.5.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.955-960
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• 2012

We fabricated piezoelectric unimorph cantilever generators (UCG) using $Pb(Zr_{0.54}Ti_{0.46})O_3$ + 0.2 wt% $Cr_2O_3$ + 1.0 wt% $Nb_2O_5$ (PZCN) piezoelectric thick films, which were produced by a tape casting method. The PZCN thick films were tailored with same width and thickness but different lengths from 7.7 to 57.7 mm in order to evaluate optimized UCG for energy harvesting device applications. When the length of PZCN film was increased, the resonance frequency of UCG was slightly increased from 7 Hz to 8 Hz, which could be due to enlarged area of the highly stiff piezo-ceramic film. However, the output power was proportionally increased with the length of PZCT film and it reached 4.68 mW (1.221 $mW/cm^3$) when the film's length was 57.7 mm under 25 g of tip mass at 8 Hz, which is sufficient for micro-scale device applications.

• Current Applied Physics
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• v.18 no.12
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• pp.1486-1491
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• 2018

In recent years, mica has been successfully used as a substrate for the growth of flexible epitaxial ferroelectric oxide thin films. Here, we systematically investigated the flexibility of mica in terms of its thickness, repeated bending/unbending, extremely hot/cold conditions, and successive thermal cycling. A $20-{\mu}m-thick$ sheet of mica is flexible even up to the bending radius of 5 mm, and it is durable for 20,000 cycles of up- and down-bending. In addition, the mica shows flexibility at 10 and 773 K, and thermal cycling stability for the temperature variation of ca. 400 K. Compared with the widely used flexible polyimide, mica has a significantly higher Young's modulus (ca. 5.4 GPa) and negligible hysteresis in the force-displacement curve. These results show that mica should be a suitable substrate for piezoelectric energy-harvesting applications of ferroelectric oxide thin films at extremely low and high temperatures.

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.7-13
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• 1995

A new FET type semiconductor pressure sensor (PSFET : pressure sensitive field effect transistor) was fabricated and its operational characteristics were investigated. A ZnO thin film as a piezoelectric layer, $5000{\AA}$ thick, was deposited on a gate oxide of FET by RF magnetron sputtering. The deposition conditions to obtain a c-axis poling structure were substrate temperature of $300^{\circ}C$, RF power of 140watt, and working pressure of 5mtorr in Ar ambience. The fabricated PSFET device showed good linearity and stability in the applied pressure range($1{\times}10^{5}\;Pa{\sim}4{\times}10^{5}\;Pa$).

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1541-1543
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• 1999

Screen printing에 의해 압전 후막을 제조하기 위하여 약 $0.6{\mu}m$의 평균 입자 크기를 갖는 PMN-PZT와 PAN-PZT 분말을 산화물 혼합법에 의해 제조하였다. 치밀한 후막의 제조를 위한 분말과 유기물의 비율은 분산이 가능한 범위에서 80:20 (분말:유기물)의 중량비를 나타내었다 사용된 기판과 하부전극은 각각 $SiO_2$/Si와 AgPd 였으며, 후막 제조시 박리 및 균열현상은 발생되지 않았다. 프린트된 후막은 건조온도와 무관한 미세구조를 나타내었으며, 보다 치밀한 구조를 갖는 후막의 제조를 이해 입자의 분산 및 열처리 조건 그리고 기판과의 매칭에 대해 연구가 계속되어야 할 것으로 생각된다.

• Korean Journal of Materials Research
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• v.3 no.3
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• pp.261-271
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• 1993

Functionally Gradient Materials(FGM) of 4.5Pb($Ni_{1/3}Nb_{2/3})O_3$-55PZT and PLZT(lO/70 /30, 11/60/40) were prepared. Its dielectric and piezoelectric strain properties were investigated. The FGM were pressed into A/B/ A configuration using two kinds of films, one layer(A) was eliminated from FGM by polishing after sintering at $l250^{\circ}C$, 2 hrs. The acrylic binder system was successfully applied for crack free film through doctor blade method. The thickness of gradent layer in FGM was about 30${\mu}$m. Dielectric properties of FGM show the average value of each side layer. The strain-electric field characteristics of FGM were significantly improved comparison with the other single compositions. The prepared FGM piezoelectric actuator shows about 3${\mu}$m/IOOV displacement.