• Journal of the Korean Ceramic Society
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• v.38 no.8
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• pp.724-731
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• 2001

스크린 인쇄법에 의해 Si 기판에 PZT 후막의 제조에 있어서 주요 문제점은 낮은 소결밀도 및 PZT 후막과 Si 기판과의 반응현상이다. 이러한 현상을 억제하기 위해 본 연구에서는 스크린 인쇄법 및 PZT sol-gel 처리법의 혼합된 방법을 채택하여 Pt/TiO$_2$/YSZ/SiO$_2$/Si(100) 기판에 Zr/Ti 비가 52/48인 PZT 후막을 제조하였으며, 소결온도에 따른 잔류분극(P$_{r}$), 유전상수($\varepsilon$$_{r}$) 및 압전상수(d$_{33}$)를 측정하였다. 인쇄된 PZT 후막에 졸 처리함으로써 단순히 인쇄된 후막에 비해 전기적 특성이 증진된 결과를 얻었다.다.

• Journal of Sensor Science and Technology
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• v.17 no.6
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• pp.418-424
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• 2008

The PZT based piezoelectric thick films prepared by screen printing method have been mainly used as a functional material for MEMS applications due to their compatibility of MEMS process. However the screen printed thick films generally reveal poor electrical and mechanical properties because of their porous microstructure. To improve microstructure we mixed attrition milled powder with ball milled powder of 0.01Pb$(Mg_{1/2}W_{1/2})O_3$-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3$-$0.35PbTiO_3$-$0.23PbZrO_3$+0.1 wt% ${Y_2}{O_3}$+1.5 wt% ZnO composition. By mixing 25 % of attrition milled powder and 75 % of ball milled powder, the broadest particle size distribution was obtained, leading to a dense thick film with crack-free microstructure and improved dielectric properties. The X-ray diffraction analysis revealed that the film was in wellcrystallized perovskite phase. The remanent polarization was increased from $13.7{\mu}C/cm^2$ to $23.3{\mu}C/cm^2$ at the addition of 25 % attrition milled powder.

• The Journal of the Acoustical Society of Korea
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• v.39 no.2
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• pp.87-97
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• 2020

In this paper, the design of piezoelectric Micro-machined Ultrasonic Transducer (pMUT) for wideband ultrasonic radiation in air was investigated. One of the methods to achieve wide frequency bandwidth in single device is modeling the transducer to multi-resonance system. The new pMUT was designed as a multi-resonance system with the addition of a suitable acoustic structure to the front and back of a thin film structure. A new pMUT consisting of thin film parts, radiation parts, and packaging parts is designed with a Lumped Parameter Model (L.P.M). Finally, it was validated as a Finite Element Method (FEM) simulation. The final designed pMUT achieved a frequency band of 102 kHz ~ 132 kHz (-3 dB).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.94-97
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• 2003

This study uses ZnO thin film as a piezoelectric material and Pt as bottom electrode for FBAR (film bulk acoustic resonator) device. ZnO thin film and Pt were deposited by RF-magnetron sputtering method. ZnO thin film and Pt were oriented to c-axis. Top electrode Al was deposited by thermal evaporation. The membrane was formed of bulk micromachining. The FBAR was evaluated by XRD, SEM and electrical characterization. The resonant frequency was measured by HP 8753C Network Analyzer. A fabricated FBAR device exhibited a resonant frequency of 700 MHz ~ 1.5 GHz. When bottom electrode and top electrode thickness were fixed, the resonant frequency was increased as decreasing ZnO thin film thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.690-693
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• 2002

This paper is concerned on method of simultaneous force(stress) and temperature sensing with PVDF film. PVDF film has piezoelectric and pyroelectric properties. Therefore, it senses changes of stress and temperature. But it's output is affected with two properties. Using different medium in a sensing element, this problem is solved. Two structures induce different equations that its solutions are changes of stress and temperature. This method and result is applicable in skin sensor that has complexity of material and structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.601-607
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• 2016

Piezoelectric thick films of soft $Pb(Zr,Ti)O_3$ (PZT) based commercial material (S55) were fabricated using a conventional tape casting method. Ag-Pd electrodes were printed on the piezoelectric film at room temperature and all 5 layered films with a dimension of $12mm{\times}16mm$ were successfully laminated for a multi-layered piezoelectric ceramic actuator. The laminated specimens were co-fired at $1,100^{\circ}C$ for 1 h. A flat layered and dense microstructure was obtained for the $112{\mu}m$ thick piezoelectric actuator after sintering process. Thereafter, a prototype piezoelectric speaker was fabricated using the multi-layered piezoelectric ceramic actuator which can operate as a bimorph. Its SPL (sound pressure level) characteristic was also evaluated for speaker application. Frequency response revealed that the output SPL with a root mean square voltage of 10 V increased gradually to the highest peak of 87.5 dB for 1.5 kHz and exhibited a relatively stable behavior over the measured frequency range (${\leq}20kHz$) at a distance of 10 cm, implying that the fabricated piezoelectric speaker is potential for speaker applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.106-106
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• 2002

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.923-929
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• 2008

On the piezoelectric polymer, PVDF (poly vinylidene fluoride), the transparent conducting oxide (TCO) electrode material thin film was deposited by roll to roll sputtering process mentioned as a mass product-friendly process for display application. The deposition method for ITO Indium Tin Oxides) as our TCO was DC magnetron sputtering optimized for polymer substrate with the low process temperature. As a result, a high transparent and good conductive ITO/PVDF film was prepared. During the process, especially, the gas mixture ratio of Ar and Oxygen was concluded as an important factor for determining the film's physical properties. There were the optimum ranges for process conditions of mixture gas ratio for ITO/PVDF From these results, the doping mechanism between the oxygen atom and the metal element, Indium or Tin was highly influenced by oxygen partial pressure condition during the deposition process at ambient temperature, which gives the conductivity to oxide electrode, as generally accepted. With our studies, the process windows of TCO for display and other application can be expected.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.237-237
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• 2009

Zinc oxide (ZnO) thin film was deposited on Si substrates using polycrystalline (poly) 3C-SiC buffer layer, in which the ZnO film was grown by sol-gel method. Physical characteristics of the grown ZnO film was investigated experimentally by means of SEM, XRD, FT-IR (Furier Transform-Infrared spectrum), and AFM. XRD pattern was proved that the grown ZnO film on 3C-SiC layers had highly (002) orientation with low FWHM (Full width of half maxium). These results showed that ZnO thin film grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• Journal of Ocean Engineering and Technology
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• v.27 no.6
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• pp.95-99
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• 2013

Lead zirconate titanate (PZT) thick films with a thickness of $10-20{\mu}m$ were fabricated on silicone substrates using an aerosol deposition method. The starting powder, which had diameters of $1-2{\mu}m$, was observed using SEM. The average diameter ($d_{50}$) was $1.1{\mu}m$. An XRD analysis showed a typical perovskite structure, a mixture of the tetragonal phase and rhombohedral phase. The as-deposited film with nano-sized grains had a fairly dense microstructure without any cracks. The deposited film showed a mixture of an amorphous phase and a very fine crystalline phase by diffraction pattern analysis using TEM. The as-deposited films on silicon were annealed at a temperature of $700^{\circ}C$. A 20-${\mu}m$ thick PZT film was torn out as a result of the high compressive stress between the PZT film and substrate.