• Journal of information and communication convergence engineering
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• v.4 no.3
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• pp.105-107
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• 2006

Amorphous silicon is a kind of optical to electric conversion material with current or voltage type after generating a numerous free electron and hole when it is injected by light. It is very effective technology to make schottky diode by bonding thin film to use optical diode. In this paper, we have fabricated optical diode device by forming chrome silicide film through thermal processing with thin film($100{\AA}$) having optimal amorphous silicon. The optimal condition is that we make a thin film by using PECVD(Plasma Enhanced Chemical Vapor Deposition) to improve reliability and characteristics of optical diode. We have obtained high quality diode by using chrome silicide optical diode from dark current and optical current measurement compared to previous method. It makes a simple process and improves a good reliability.

• Journal of the Korean Society of Radiology
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• v.16 no.6
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• pp.697-702
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• 2022

For imaging in positron emission tomography(PET), it is necessary to measure the position of the scintillation pixel interacting with the gamma rays incident on the detector. To this end, in the conventional system, a flood image of the scintillation pixel is obtained, the imaged area of each scintillation pixel is separated, and the position of the scintillation pixel is specified and acquired as a digital signal. In this study, a deep learning method was applied based on the signal formed by the photosensor of the detector, and a method was developed to directly acquire a digital signal without going through various procedures. DETECT2000 simulation was performed to verify this and evaluate the accuracy of position measurement. A detector was constructed using a 6 × 6 scintillation pixel array and a 4 × 4 photosensor, and a gamma ray event was generated at the center of the scintillation pixel and summed into four channels of signals through the Anger equation. After training the deep learning model using the acquired signal, the positions of gamma-ray events that occurred in different depth directions of the scintillation pixel were measured. The results showed accurate results at every scintillation pixel and position. When the method developed in this study is applied to the PET detector, it will be possible to measure the position of the scintillation pixel with a digital signal more conveniently.

• Journal of Sensor Science and Technology
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• v.29 no.5
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• pp.328-331
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• 2020

In this study, a highly crystalline SnO₂ thin film was formed using a sol-gel process. In addition, a SnO₂ thin-film transistor was successfully fabricated. The fabricated SnO₂ thin-film transistor exhibited conventional n-type semiconductor properties, with a mobility of 0.1 cm² V^-1 s^-1, an on/off current ratio of 1.2 × 10⁵, and a subthreshold swing of 2.69. The formed SnO₂ had a larger bandgap (3.95 eV) owing to the bandgap broadening effect. The fabricated photosensor exhibited a responsivity of 1.4 × 10^-6 Jones, gain of 1.43 × 10⁷, detectivity of 2.75 × 10^-6 cm Hz^1/2 W^-1, and photosensitivity of 4.67 × 10².

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.906-911
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• 2004

In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode. Considering these results, we fabricated p-i-n diodes on the high resistive($4k{\Omega}{\cdot}cm$) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of p-i-n diode can be decreased by the application of finger pattern has parallel resistance structure from $571\Omega$ to $393\Omega$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.1-4
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• 2004

Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition(CBD)method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in $N_2$ gas at $450^{\circ}C$ it was found hexagonal structure whose lattice parameters $a_0$ and $c_0$ were $4.302{\AA}$ and 7.014 ${\AA}$, respectively. Its grain size was about 0.3 ${\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and movility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 200K, and by polar optical scattering at temperature range of 200K and 293K. We measured also spectral response, sensitivity$(\gamma)$, maximum allowable power dissipation and response time on these samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.100-103
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• 2003

Signal detection technologies such as fluorescence, charge and electrochemical detection used in the monolithic capillary electrophoresis system to convert the biochemical reaction into the electrical signal. The fluorescence detection using photodiodes that measure fluorescence emitted from eluting molecules is widely used for the monolithic capillary electrophoresis system. In this paper, in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. The p-i-n diode has higher sensitivity than photodiode. Considering these results, we fabricated p-i-n diodes on the high resistive$(4k{\Omega}{\cdot}cm)$ wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of p-i-n diode can be decreased by the application of finger pattern has parallel resistance structure from $571{\Omega}$ to $393{\Omega}$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.17 no.5
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• pp.15-21
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• 2003

This paper presents field measurements on daylighting and electric lighting with dimming controlled systems for a small office in Seoul, Korea. And the main purpose of this study is to provide the evaluation data of lighting energy performance when a dimming system is installed. For the performance evaluation, the mock-up room(3.6x7.2x2.6[m]) was used for the actual test. The results of this study were as follows; 1) The correlation between daylight illuminance at a workplane(Ed) and the photosensor signal(Sd) was an important factor affecting the performance of daylight responsive dimming system, 2) The mock-up office space gained a sufficient workplace illuminance of 579[lux] with the dimming control system 3) About 53[%J of monthly lighting energy could be saved using the dimming control system.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.5
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• pp.67-73
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• 2013

The conversion of solar radiation into electrical energy by Photo-Voltaic (PV) effect is a very promising technology, being clean, silent and reliable, with very small maintenance costs and small ecological impact. The output power produced by the PV panels depends strongly on the incident light radiation. The continuous modification of the sun-earth relative position determines a continuously changing of incident radiation on a fixed PV panel. The point of maximum received energy is reached when the direction of solar radiation is perpendicular on the panel surface. Thus an increase of the output energy of a given PV panel can be obtained by mounting the panel on a solar tracking device that follows the sun trajectory. Tracking systems that have two axes and follow the sun closely at all times during the day are currently the most popular. This paper presents research conducted into the performance of Solar tracking system with photosensors. The results show that an optimized dual-axis tracking system with photosensor performance and analysis. From the obtained results, it is seen that the sun tracking system improves the energy and energy efficiency of the PV panel.ti-junction CPV module promises to accelerate growth in photovoltaic power generation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.134-135
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• 2006

$AgInS_2$ single crystal thin filmsl was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $680^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is $6{\mu}m$. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $AgInS_2$ single crystal thin film, we have found that the values of spin orbit coupling ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0098 eV and 0.15 eV at 10 K, respectively. In order to explore the applicability as a photoconductive cell, we measured the sensitivity ($\gamma$), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The result indicated that the samples annealed in S vapour the photoconductive characteristics are best. Therefore we obtained the sensitivity of 0.98, the value of pc/dc of $1.02{\times}10^6$, the MAPD of 312 mW, and the rise and decay time of 10.4ms and 10.8ms respectively.

• Journal of Sensor Science and Technology
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• v.30 no.5
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• pp.279-285
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• 2021

Recently, cesium tellurium iodine (Cs₂TeI₆) has emerged as an inorganic halide perovskite material with potential application in optoelectronic devices due to its high absorption coefficient, suitable bandgap and because it consists of nontoxic and earth-abundant elements. However, studies on its fabrication process as well as photoresponse characteristics are limited. In this study, a simple and effective method is introduced for the synthesis of Cs₂TeI₆ thin films by a two-step dry process. A Cs₂TeI₆-based lateral photosensor was fabricated, and its photoresponse characteristics were explored under laser illuminations of four different wavelengths in the visible range: 405, 450, 520, and 655 nm. The initial photosensing results suggest potential application and can lead to more promising studies of Cs₂TeI₆ film in optoelectronics.