• 제목/요약/키워드: Photonic

검색결과 950건 처리시간 0.026초

포토닉 밴드갭 구조를 이용한 두껍고 유전상수가 높은 패치 안테나의 성능 향상 (Improvement of Performance of Thick and High Dielectric Patch Antennas using Photonic Bandgap Structures)

  • 기철실;박익모;임한조;한해욱;이정일
    • 한국전자파학회논문지
    • /
    • 제13권1호
    • /
    • pp.1-6
    • /
    • 2002
  • 본 논문에서는 표면파의 전파를 억제하는 포토닉 밴드갭 구조가 기판의 두께가 두껍고 유전상수가 높은 패치 안테나의 복사효율과 후방 복사를 획기적으로 개선할 수 있음을 보였다.

2차원 광결정 군속도의 특징 (Properties of Zero Group Velocity in 2-dimensional Photonic Crystal)

  • 김경래;이명래;신원진;김창교;홍진수
    • 한국전기전자재료학회논문지
    • /
    • 제23권2호
    • /
    • pp.137-142
    • /
    • 2010
  • A plane wave expansion method (PWEM) was applied for photonic band structure calculation. We examined zero group velocity modes in photonic crystal. The zero group velocity modes were obtained at the second band along F-K direction. We expanded higher order Brillouin zone (BZ) to find the locations of zero group velocity modes and to investicate their properties. We found twelve locations, inside the first Brillouin zone, where the group velocities became zero. Also, we calculated band structure and group velocity in off-plane configuration.

Wideband Slow Light in a Line-defect Annular Photonic-crystal Waveguide

  • Kuang, Feng;Li, Feng;Yang, Zhihong;Wu, Hong
    • Current Optics and Photonics
    • /
    • 제3권5호
    • /
    • pp.438-444
    • /
    • 2019
  • In this theoretical study, a line-defect photonic-crystal waveguide hosted in an annular photonic crystal was demonstrated to provide high-performance slow light with a wide band, low group-velocity dispersion, and a large normalized delay-bandwidth product. Combined with structural-parameter optimization and selective optofluid injection, the normalized delay-bandwidth product could be enhanced to a large value of 0.502 with a wide bandwidth of 58.4 nm in the optical-communication window, for a silicon-on-insulator structure. In addition, the group-velocity dispersion is on the order of $10^5$ ($ps^2/km$) in the slow-light region, which could be neglected while keeping the signal transmission unchanged.

Dispersion and Nonlinear Properties of Elliptical Air Hole Photonic Crystal Fiber

  • Rao, MP Srinivasa;Singh, Vivek
    • Current Optics and Photonics
    • /
    • 제2권6호
    • /
    • pp.525-531
    • /
    • 2018
  • The effect of eccentricity on dispersion and nonlinear properties of a photonic crystal fiber having elliptical air holes is investigated using a fully vectorial effective index method. It is found that the effective refractive index increases with increase of eccentricity. The dependence of dispersion and nonlinear properties of the PCF on the eccentricity of the air hole is investigated. It is revealed that eccentricity of the air hole affects the zero dispersion wavelength. Further, the nonlinear properties such as mode field area, nonlinear coefficient and self phase modulation of the Photonic crystal fibers are analyzed. The mode field area increases and the nonlinear coefficient decreases with increase in eccentricity. The variation of the self phase modulation with elliptical air hole is also discussed.

Efficient and Exact Extraction of the Object Wave in Off-axis Digital Holography

  • Jang, Jin;Jeon, Jun Woo;Kim, Jin Sub;Joo, Ki-Nam
    • Current Optics and Photonics
    • /
    • 제2권6호
    • /
    • pp.547-553
    • /
    • 2018
  • In this paper, a new method for spatial filtering in digital holography is proposed and verified by simulations compared to conventional methods. The new method is based on the simultaneous acquisition of two digital holograms, which can be separated by distinct spatial modulation, in a single image. Two holograms are generated by two reference waves, which have different spatial modulation orientations. Then, the overlapping region between the DC term and the object wave in the first hologram can be replaced with a less-overlapping region of the object wave in the second hologram because the whole image contains two holograms where the same objective wave has been recorded. In the simulation results, it is confirmed that the reconstructed image by the new method has better quality than for the original method.

Chirality in Non-Hermitian Photonics

  • Yu, Sunkyu;Piao, Xianji;Park, Namkyoo
    • Current Optics and Photonics
    • /
    • 제3권4호
    • /
    • pp.275-284
    • /
    • 2019
  • Chirality is ubiquitous in physics and biology from microscopic to macroscopic phenomena, such as fermionic interactions and DNA duplication. In photonics, chirality has traditionally represented differentiated optical responses for right and left circular polarizations. This definition of optical chirality in the polarization domain includes handedness-dependent phase velocities or optical absorption inside chiral media, which enable polarimetry for measuring the material concentration and circular dichroism spectroscopy for sensing biological or chemical enantiomers. Recently, the emerging field of non-Hermitian photonics, which explores exotic phenomena in gain or loss media, has provided a new viewpoint on chirality in photonics that is not restricted to the traditional polarization domain but is extended to other physical quantities such as the orbital angular momentum, propagation direction, and system parameter space. Here, we introduce recent milestones in chiral light-matter interactions in non-Hermitian photonics and show an enhanced degree of design freedom in photonic devices for spin and orbital angular momenta, directionality, and asymmetric modal conversion.

Optimization of charge and multiplication layers of 20-Gbps InGaAs/InAlAs avalanche photodiode

  • Sim, Jae-Sik;Kim, Kisoo;Song, Minje;Kim, Sungil;Song, Minhyup
    • ETRI Journal
    • /
    • 제43권5호
    • /
    • pp.916-922
    • /
    • 2021
  • We calculated the correlation between the doping concentration of the charge layer and the multiplication layer for separate absorption, grading, charge, and multiplication InGaAs/InAlAs avalanche photodiodes (APDs). For this purpose, a predictable program was developed according to the concentration and thickness of the charge layer and the multiplication layer. We also optimized the design, fabrication, and characteristics of an APD for 20 Gbps application. The punch-through voltage and breakdown voltage of the fabricated device were 10 V and 33 V, respectively, and it was confirmed that these almost matched the designed values. The 3-dB bandwidth of the APD was 10.4 GHz, and the bit rate was approximately 20.8 Gbps.