• 한국전기전자재료학회논문지
• /
• 제16권2호
• /
• pp.89-96
• /
• 2003

Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been performed at 6 K on the 1540 nm $^4$I$\_$(13/2)/\longrightarrow$^4$I$\_$(15/2)/ emission of Er$\^$+3/ in in situ Er-doped GaN The PL and PLE spectra of in situ Er-doped GaN are compared with those of Er-implanted GaN in this study. The lineshapes of the broad PLE absorption bands and the broad PL bands in the spectra of the in situ Er-doped GaN are similar to those in Er-doped glass rather than in the Er-implanted GaN. The PL spectra of this in situ Er-doped GaN are independent of excitation wavelength and their features are significantly different from the site-selective PL spectra of the Er-implanted GaN. These PL and PLE studies reveal that a single type of Er$\^$3+/ sites is present in the in situ Er-doped GaN and these Er sites are different from those observed in the Er-implanted GaN. In addition, the comparison of the PL single strength illustrates that the excitation of Er$\^$3+/ sites through the energy absorption of defects in Er-implanted GaN.

• Applied Science and Convergence Technology
• /
• 제23권3호
• /
• pp.113-127
• /
• 2014

For more than five decades, silicon has dominated the semiconductor industry that supports memory devices, ICs, photovoltaic devices, etc. Photoluminescence (PL) is an attractive silicon characterization technique because it is contactless and provides information on bulk impurities, defects, surface states, optical properties, and doping concentration. It can provide high resolution spectra, generally with the sample at low temperature and room-temperature spectra. The photoluminescence properties of silicon at low temperature are reviewed and discussed in this study. In this paper, silicon bulk PL spectra are shown in multiple peak positions at low temperature. They correspond with various impurities such as In, Al, and Be, phonon interactions, for example, acoustical phonons and optical phonons, different exciton binding energies for boron and phosphorus, dislocation related PL emission peak lines, and oxygen related thermal donor PL emissions.

• 한국세라믹학회지
• /
• 제45권3호
• /
• pp.146-149
• /
• 2008

Strontium-substituted $Sr_{1-x}Ba_xAl_2O_4:Eu^{2+},\;Dy^{3+}$ compositions were prepared by the solid state synthesis method. These compositions were characterized for their phase, crystallinity and morphology using powder x-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. Photoluminescence properties were investigated by measuring excitation spectra, emission spectra and decay time for varying Ba/Sr concentrations. Photoluminescence results show higher luminescence and long decay time for $Sr_{1-x}Ba_xAl_2O_4:Eu^{2+},\;Dy^{3+}$(x=0). This is probably due to the influence of the 5d electron states of $Eu^{2+}$ in the crystal field. Long persistence was observed for these compositions due to $Dy^{3+}$ co-doping.

• 한국광물학회지
• /
• 제22권2호
• /
• pp.81-86
• /
• 2009

변색 효과를 보이는 6종의 보석들을 대상으로 UV-Vis 분광분석과 Photoluminescence에 의한 발광 및 형광 특성을 조사하였다. 514 nm Ar이온 source로 PL을 측정한 결과 발광 피크의 모양이 다르게 나타났고 같은 천연과 합성 보석에서는 동일한 피크가 나타났다. 이들 발광 및 형광 특성은 보석들의 결정 구조와 관련이 있음을 관찰할 수 있었다. 325 nm He-Cd source에 의한 형광 조사에서는 합성 알렉산드라이트와 합성 칼라체인지 사파이어 그리고 천연 알렉산드라이트에서 강한 형광이 나타났고 이를 PL 피크로 확인하였다.

• 한국재료학회지
• /
• 제32권10호
• /
• pp.419-424
• /
• 2022

Halide perovskite solar cells (PSCs) have improved rapidly over the past few years, and research on the optoelectrical properties of halide perovskite thin films has grown as well. Among the characterization techniques, photoluminescence (PL), a method of collecting emitted photons to evaluate the properties of materials, is widely applied to evaluate improvements in the performance of PSCs. However, since only photons emitted from the film in the escape cone are included, the photons collected in PL are a small fraction of the total photons emitted from the film. Unlike PSCs power conversion efficiency, PL measuring methods have not been standardized, and have been evaluated in a variety of ways. Thus, an in-depth study is needed of the methods used to evaluate materials using PL spectra. In this study, we examined the PL spectra of the perovskite light harvesting layer with different measurement protocols and analyzed the features. As the incident angle changed, different spectra were observed, indicating that the PL emission spectrum can depend on the measuring method, not the material. We found the intensity and energy of the PL spectra changes were due to the path of the emitted photons. Also, we found that the PL of halide perovskite thin films generally contains limited information. To solve this problem, the emitted photons should be collected using an integrating sphere. The results of this study suggest that the emission spectrum of halide perovskite films should be carefully interpreted in accordance with PL measuring method, since PL data is mostly affected by the method.

• 센서학회지
• /
• 제11권3호
• /
• pp.183-190
• /
• 2002

실리콘 기판 위에 형성한 열산화막에 실리콘이온을 주입하고 열처리를 수행한 후, 광루미네센스(photoluminescence:PL) 스펙트럼을 조사하였다. 실리콘 이온도즈의 변화와 열처리 온도의 변화에 따른 PL스펙트럼을 조사하고, 이를 TEM과 XRD 데이터와 비교하여 분석한 결과, 광루미네센스 특성은 산화막내의 실리콘 나노결정으로부터 기인함을 알 수 있었다. 또 산화막을 1분 간격으로 습식 식각하면서 매 식각 시마다 PL스펙트럼을 관측하여 그 변화를 조사하였다. 이러한 실험을 통하여 산화막내에 분포하고 있는 실리콘 나노결정의 크기와 그 수가 PL피크 파장과 강도에 직접적으로 영향을 줌을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
• /
• pp.88-91
• /
• 2003

Si nanocrystallites thin films have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed at the temperature range of 400 to $800^{\circ}C$. Hydrogen passivation was then performed in the forming gas ($95%N_{2}+5%H_{2}$) at $500^{\circ}C$. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. As a result of photoluminescence spectra and infrared absorption spectra, we conclude that the violet-indigo PL efficiency is related with oxygen vacancy in the $SiO_x$(x= 1.6-1.8) matrix.

• 한국전기전자재료학회논문지
• /
• 제24권8호
• /
• pp.659-663
• /
• 2011

[ $Y_{1-x}BO_3:Tb_x^{3+}$ ]ceramic phosphors were synthesized with changing the concentration of $Tb^{3+}$ at a sintering temperature of $1,100^{\circ}C$ and a reduction temperature of $950^{\circ}C$ by using a solid-state reaction method. The crystal structure, surface morphology, and photoluminescence properties of the phosphors were investigated as a function of $Tb^{3+}$ ion concentration by using XRD (x-ray diffractometer), scanning electron microscopy, and photoluminescence spectrophotometry, respectively. The XRD results showed that the main peak of the phosphor powders occurs at (101) plane. As for the photoluminescence properties, the excitation spectra showed the broad band centered at 306 nm and the emission intensity of the spectra peaked at 543 nm indicated a significant decrease as the concentration of $Tb^{3+}$ ion is increased.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.33-38
• /
• 2000

The ~1540 nm Er$^{3+}$ photoluminescence (PL) and photoluminescence excitation (PLE) spectra of Er-implanted Mg-codoped GaN (GaN:Er+Mg) exhibit that the excitation efficiency of a specific Er$^{3+}$ center among different Er$^{3+}$ centers existing in Er-implanted GaN is selectively enhanced, compared to Er-implanted undoped GaN (GaN:Er). In GaN:Er+Mg, the 1540 nm PL peaks characteristic of the so-called "violet-pumped" Er$^{3+}$ center and the ~2.8-3.4 eV (violet) PLE band are significantly strengthened by the Mg-doping. The intra-f absorption PLE bands associated with this "violet-pumped" center are also enhanced by this doping. The 1540 nm PL peaks originating from the violet-pumped center dominate the above-gap-excited Er$^{3+}$ PL spectrum of GaN:Er+Mg, whereas it was unobservable under above-gap excitation in GaN:Er. All of these results indicate that Mg doping increases the efficiency of trap-mediated excitation of Er$^{3+}$ emission in Er-implanted GaN.planted GaN.

• Bulletin of the Korean Chemical Society
• /
• 제16권11호
• /
• pp.1019-1023
• /
• 1995

A light-emitting silicon material was prepared by electrochemical etching of n-Si single crystal wafers in a solution of hydrofluoric acid and ethanol. Visible photoluminescence from the silicon was inhomogeneous and decayed rapidly in the ambient laboratory conditions or with photoirradiation. Substantial improvements in photoluminescence which include little-dependent luminescence peak energy with excitation energy variation and longer-lasting room temperature visible photoluminescence were achieved when the surface of photoluminescent silicon material was derivatized with the surface modifier of octadecylmercaptan. Surface modification of the photoluminescent silicon was evidenced by the measurements of contact angles of static water drops, FT-IR spectra and XPS data, in addition to changed photoluminescence. Similar improvements in photoluminescence were observed with the light-emitting silicon treated with dodecylmercaptan, but not with octadecane. The present results indicate that sulfurs of octadecylmercaptans or dodecylmercaptans appear to coordinate the surface Si atoms of LESi and perturb the surface states to significantly change the luminescent characteristics of LESi.