Comparison of In-situ Er-doped GaN with Er-implanted GaN Using Photoluminescence and Photoluminescence Excitation Spectroscope |
김현석
(고려대학교 전기공학과)
성만영 (고려대학교 전기공학과) 김상식 (고려대학교 전기공학과) |
1 |
Trap mediated excitation of <TEX>$Er^{+3}$</TEX> photoluminescence in Er-implanted GaN
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DOI ScienceOn |
2 |
Rare earth dopants as probes of localized states in chalcogenide glasses
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DOI ScienceOn |
3 |
Photoluminescence of properties of Er doped GaN
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DOI ScienceOn |
4 |
Site-selective photoluminescence spectroscopy of Er-implanted wurtzite GaN under various annealing conditions
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5 |
GaN 박막 및 소자의 연구동향 : GaN:Er의 적외선 발광
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과학기술학회마을 |
6 |
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7 |
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8 |
Observation of multiple <TEX>$Er^{+3}$</TEX> sites in Er-implanted GaN by site-selective photo luminescence excitation spectroscopy
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DOI ScienceOn |
9 |
Luminescence of erbium implanted in various semiconductors : Ⅳ, Ⅲ Ⅴ and ⅡⅥ materials
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DOI ScienceOn |
10 |
Temperature - dependent photoluminescence from Er-implanted undoped and Mg-doped GaN
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과학기술학회마을 |
11 |
Photo, cathodo-, and electroluminescence from erbium and oxygen co-implanted GaN
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DOI ScienceOn |
12 |
Excitation mechanisms of multiple <TEX>$Er^{+3}$</TEX> sites in Er-implanted GaN
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DOI ScienceOn |
13 |
Direct and indirect excitation of <TEX>$Er^{+3}$</TEX> ions in Er: AIN
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DOI ScienceOn |
14 |
Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er
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DOI ScienceOn |
15 |
Site-selectifve photoluminescence spectroscopy of er-implanted wurtzite GaN under various annealing condition
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과학기술학회마을 |
16 |
Photoluminescence spectroscopy of erbium implanted gallium nitride
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DOI ScienceOn |