• 한국재료학회지
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• 제23권3호
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• pp.161-167
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• 2013

The ZnO thin films were grown on GaN template substrates by RF magnetron sputtering at different RF powers and n-ZnO/p-GaN heterojunction LEDs were fabricated to investigate the effect of the RF power on the characteristics of the n-ZnO/p-GaN LEDs. For the growth of the ZnO thin films, the substrate temperature was kept constant at $200^{\circ}C$ and the RF power was varied within the range of 200 to 500W at different growth times to deposit films of 100 nm thick. The electrical, optical and structural properties of ZnO thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and by assessing the Hall effect. The characteristics of the n-ZnO/p-GaN LEDs were evaluated by current-voltage (I-V) and electroluminescence (EL) measurements. ZnO thin films were grown with a preferred c-axis orientation along the (0002) plane. The XRD peaks shifted to low angles and the surface roughness became non-uniform with an increase in the RF power. Also, the PL emission peak was red-shifted. The carrier density and the mobility decreased with the RF power. For the n-ZnO/p-GaN LED, the forward current at 20 V decreased and the threshold voltage increased with the RF power. The EL emission peak was observed at approximately 435 nm and the luminescence intensity decreased. Consequently, the crystallinity of the ZnO thin films grown with RF sputtering powers were improved. However, excess Zn affected the structural, electrical and optical properties of the ZnO thin films when the optimal RF power was exceeded. This excess RF power will degrade the characteristics of light emitting devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.399-402
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layers thickness, morphology and interface with electrode. In this study, light-omitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl(1-1\`-biphenyl]-4,4'-diamine). Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. We also investigated stability of the devices using buffer layer with blend of PEI (Poly ether imide) and TPD by varying mot ratios between ITO and Alq$_3$. In current-voltage characteristics measurement, we obtained the turn-on voltage at about 6 V and observed an anomalous behavior at 3∼4 V. And we used other buffer layer of PEDT(3,4-pyrazino-3',4'-ethylenedithio-2,2',5,5'-tetrathiafulvalenium) with ITO/PEDT/TPD/Alq$_3$Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$. We also studied EL spectrum in the cell structure of ITO/(TPD+PEI)/Alq$_3$/Al.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• 한국재료학회지
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• 제22권10호
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• pp.508-512
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• 2012

ZnO thin films were grown on a sapphire substrate by RF magnetron sputtering. The characteristics of the thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), and Hall effect. The substrate temperature and growth time were kept constant at $200^{\circ}C$ at 30 minutes, respectively. The RF power was varied within the range of 200 to 500 W. ZnO thin films on sapphire substrate were grown with a preferred C-axis orientation along the (0002) plan; X-ray diffraction peak shifted to low angles and PL emission peak was red-shifted with increasing RF power. In addition, the electrical characteristics of the carrier density and mobility decreased and the resistivity increased. In the electrical and optical properties of ZnO thin films under variation of RF power, the crystallinity improved and the roughness increased with increasing RF power due to decreased oxygen vacancies and the presence of excess zinc above the optimal range of RF power. Consequently, the crystallinity of the ZnO thin films grown on sapphire substrate was improved with RF sputtering power; however, excess Zn resulted because of the structural, electrical, and optical properties of the ZnO thin films. Thus, excess RF power will act as a factor that degrades the device characteristics.

• 한국전기전자재료학회논문지
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• 제32권1호
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• pp.86-92
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• 2019

Although perylene bisimide derivatives have advantages such as excellent thermal stability and high luminance efficiency, they have poor solubility characteristics in organic solvents. In this research, in order to improve the solubility characteristics, we prepared perylene bisimide derivatives (1C) and (2C) with swallow-tail substituted imide, which is known to lead to excellent solubility. The structures and properties of swallow-tail perylene bisimide (1C) and (2C) were analyzed by $^1H-NMR$, FT-IR, UV/Vis spectroscopy, and thermogravimetric analysis (TGA). The maximum absorption wavelengths of (1C) and (2C) in the UV/Vis spectrum were 558 nm and 556 nm, respectively, and the maximum emission wavelengths were 602 nm and 600 nm, respectively. In the TGA, (1C) demonstrated good thermal stability with less than 5 wt% weight loss up to $242^{\circ}C$. In the solubility test, (1C) and (2C) exhibited solubilities of more than 5 wt% in chloroform, ethyl acetate, and dimethylformamide, but not in methanol. When the compounds (1C) and (2C) were mixed with PMMA (polymethyl methacrylate), thin films showed peaks at 679 nm and 677 nm, respectively, in the photoluminescence spectra. (1C) was found to be a possible candidate as red organic phosphor for hybrid LEDs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1747-1749
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• 1999

Organic electroluminescent devices (OLEDs) have received a great deal of attention due to their potential application as full-color displays. Europium complexes are known as excellent red color-emitting materials for OLEDs since they show intense photoluminescence at around 610 nm with a sharp spectral bandwidth. In this study, triple-layer and multiple quantum-well structures consisting of Eu$(TTA)_3$(bpy) complex well layer sandwiched triphenyldiamine derivative (TPD) layers were fabricated and their photoluminescent characteristics were investigated. Sharp emission at the wavelength of 615 nm has been observed from the triple-layer and multiple quantum-well structures containing Eu complex. Details on the electrical properties of these structures will be also discussed.

• Transactions on Electrical and Electronic Materials
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• 제15권5호
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• pp.249-252
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• 2014

The aim of this work is to investigate the effect of $Ca_xSr_{2-x}$ and activator on the structural and luminescent properties of green-emitting $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ nano phosphor. Using urea as fuel and ammonium nitrate as oxidizer, $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ has been successfully synthesized, using a combustion method. The particles were found to be small, spherical and of round surface. SEM imagery showed that the phosphors particles are of nanosize. The $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ emission spectrum for 360 nm excitation showed a single band, with a peak at 490 nm, which is a green emission. The highest luminous intensity was at $1,000^{\circ}C$, which was obtained when the $Eu^{2+}$ content (y) was 0.05. The results support the application of $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ phosphor as a fluorescent material for ultraviolet light-emitting diodes (UV-LEDs). Characteristics of the synthesized $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ phosphor were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and photoluminescence (PL) detection.

• Journal of Information Display
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• 제2권3호
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• pp.1-5
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• 2001

The effect of doping on the energy transfer and charge carrier trapping processes has been studied in organic light-emitting diodes (OLEDs) doped with a fluorescent laser dye. The devices consisted of N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1-biphenyl-4,4'-diamine (TPD) as a hole transporting layer, tris(8-hydroxyquinoline) aluminum ($Alq_3$) as the host, and a fluorescent dye, 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1 H,5H-benzo[i,j]quinolizin-8-yl) vinyl]-4H-pyran) (DCM2) as the dopant. Temperature dependence of the current-voltage-luminescence (I-V-L) characteristics, the electroluminescence (EL) and photoluminescence (PL) spectra are studied in the temperature ranging between 15 K and 300 K. The emission from DCM2 was seen to be much stronger compared with the emission from $Alq_3$, indicative of efficient energy transfer from $Alq_3$ to DCM2. In addition, the EL emission from DCM2 increasd with increasing temperature while the emission from the host $Alq_3$ decreased. The result indicates that direct charge carrier trapping becomes efficient with increasing temperature. The EL emission from DCM2 shows a slightly sublinear dependence on the current density, implying the enhanced quenching of excitons at high current densities due to the exciton-exciton annihilation.

• 한국재료학회지
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• 제14권8호
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• pp.600-606
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• 2004

$Zn_{2}SiO_{4}:Mn$ phosphor particles were prepared by a flame spray pyrolysis method. It has been generally known that the high-temperature flame enables fast drying and decomposition of droplets. In the present investigation, the morphology and luminescent property of $Zn_{2}SiO_{4}:Mn$ phosphor were controlled in a severe flame preparation condition. The particle formation in the flame spray pyrolysis process was achieved by the droplet-to-particle conversion without any evaporation of precursors, which made it possible to obtain spherical $Zn_{2}SiO_{4}:Mn$ particles of a pure phase from a droplet. Using colloidal solutions wherein dispersed nano-sized silica particles were adopted as a silicon precursor. $Zn_{2}SiO_{4}:Mn$ particles with spherical shape and filled morphology were prepared and the spherical morphology was maintained even after the high-temperature heat treatment, which is necessary to increase the photoluminescence intensity. The $Zn_{2}SiO_{4}:Mn$ particles with spherical shape, which were prepared by the flame spray pyrolysis and posttreated at $1150^{\circ}C$, showed good luminescent characteristics under vacuum ultraviolet (VUV) excitation.

• 센서학회지
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• 제15권2호
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• pp.84-89
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• 2006

Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature($400{\sim}700^{\circ}C$) at 350 mtorr of oxygen working pressure. Arsenic doped(1 wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at $600^{\circ}C$ of deposition temperature.