• 제목/요약/키워드: Photolithography Process

검색결과 251건 처리시간 0.044초

Exposure to Volatile Organic Compounds and Possibility of Exposure to By-product Volatile Organic Compounds in Photolithography Processes in Semiconductor Manufacturing Factories

  • Park, Seung-Hyun;Shin, Jung-Ah;Park, Hyun-Hee;Yi, Gwang-Yong;Chung, Kwang-Jae;Park, Hae-Dong;Kim, Kab-Bae;Lee, In-Seop
    • Safety and Health at Work
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    • 제2권3호
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    • pp.210-217
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    • 2011
  • Objectives: The purpose of this study was to measure the concentration of volatile organic compound (VOC)s originated from the chemicals used and/or derived from the original parental chemicals in the photolithography processes of semiconductor manufacturing factories. Methods: A total of four photolithography processes in 4 Fabs at three different semiconductor manufacturing factories in Korea were selected for this study. This study investigated the types of chemicals used and generated during the photolithography process of each Fab, and the concentration levels of VOCs for each Fab. Results: A variety of organic compounds such as ketone, alcohol, and acetate compounds as well as aromatic compounds were used as solvents and developing agents in the processes. Also, the generation of by-products, such as toluene and phenol, was identified through a thermal decomposition experiment performed on a photoresist. The VOC concentration levels in the processes were lower than 5% of the threshold limit value (TLV)s. However, the air contaminated with chemical substances generated during the processes was re-circulated through the ventilation system, thereby affecting the airborne VOC concentrations in the photolithography processes. Conclusion: Tens of organic compounds were being used in the photolithography processes, though the types of chemical used varied with the factory. Also, by-products, such as aromatic compounds, could be generated during photoresist patterning by exposure to light. Although the airborne VOC concentrations resulting from the processes were lower than 5% of the TLVs, employees still could be exposed directly or indirectly to various types of VOCs.

Uniformity Improvement of Micromirror Array for Reliable Working Performance as an Optical Modulator in the Maskless Photolithography System

  • Lee, Kook-Nyung;Kim, Yong-Kweon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제1권2호
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    • pp.132-139
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    • 2001
  • We considered the uniformity of fabricated micromirror arrays by characterizing the fabrication process and calculating the appropriate driving voltages of micromirrors used as virtual photomask in maskless photolithography. The uniformity of the micromirror array in terms of driving voltage and optical characteristics is adversely affected by factors, such as the air gap between the bottom electrode and the mirror plate, the spring shape and the deformation of the mirror plate or torsion spring. The thickness deviation of the photoresist sacrificial layer, the misalignment between mirror plate and bottom electrode, the aluminum deposition condition used to produce the spring and the mirror plate, and initial mirror deflection were identified as key factors. Their importance lies in the fact that they are related to air gap deviations under the mirror plate, asymmetric driving voltages in left and right mirror directions, and the deformation of the Al sring or mirror plate after removal of the sacrificial layer. The plasma ashing conditions used for removing the sacrificial layer also contributed to the deformation of the mirror plate and spring. Driving voltages were calculated for the pixel operation of the micromirror array, and the non-uniform characteristics of fabricated micromirrors were taken into consideration to improve driving performance reliability.

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Research on the WIP-based Dispatching Rules for Photolithography Area in Wafer Fabrication Industries

  • Lin, Yu-Hsin;Tsai, Chih-Hung;Lee, Ching-En;Chiu, Chung-Ching
    • International Journal of Quality Innovation
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    • 제8권2호
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    • pp.132-146
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    • 2007
  • Constructing an effective production control policy is the most important issue in wafer fabrication factories. Most of researches focus on the input regulations of wafer fabrication. Although many of these policies have been proven to be effective for wafer fabrication manufacturing, in practical, there is a need to help operators decide which lots should be pulled in the right time and to develop a systematic way to alleviate the long queues at the bottleneck workstation. The purpose of this study is to construct a photolithography workstation dispatching rule (PADR). This dispatching rule considers several characteristics of wafer fabrication and influential factors. Then utilize the weights and threshold values to design a hierarchical priority rule. A simulation model is also constructed to demonstrate the effect of the PADR dispatching rule. The PADR performs better in throughput, yield rate, and mean cycle time than FIFO (First-In-First-Out) and SPT (Shortest Process Time).

LCD 제조공정에서 사용되는 화학물질의 종류 및 특성 (Types & Characteristics of Chemical Substances used in the LCD Panel Manufacturing Process)

  • 박승현;박해동;노지원
    • 한국산업보건학회지
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    • 제29권3호
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    • pp.310-321
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    • 2019
  • Objectives: The purpose of this study was to investigate types and characteristics of chemical substances used in LCD(Liquid crystal display) panel manufacturing process. Methods: The LCD panel manufacturing process is divided into the fabrication(fab) process and module process. The use of chemical substances by process was investigated at four fab processes and two module processes at two domestic TFT-LCD(Thin film transistor-Liquid crystal display) panel manufacturing sites. Results: LCD panels are manufactured through various unit processes such as sputtering, chemical vapor deposition(CVD), etching, and photolithography, and a range of chemicals are used in each process. Metal target materials including copper, aluminum, and indium tin oxide are used in the sputtering process, and gaseous materials such as phosphine, silane, and chlorine are used in CVD and dry etching processes. Inorganic acids such as hydrofluoric acid, nitric acid and sulfuric acid are used in wet etching process, and photoresist and developer are used in photolithography process. Chemical substances for the alignment of liquid crystal, such as polyimides, liquid crystals, and sealants are used in a liquid crystal process. Adhesives and hardeners for adhesion of driver IC and printed circuit board(PCB) to the LCD panel are used in the module process. Conclusions: LCD panels are produced through dozens of unit processes using various types of chemical substances in clean room facilities. Hazardous substances such as organic solvents, reactive gases, irritants, and toxic substances are used in the manufacturing processes, but periodic workplace monitoring applies only to certain chemical substances by law. Therefore, efforts should be made to minimize worker exposure to chemical substances used in LCD panel manufacturing process.

Inductively coupled plasma etching of SnO2 as a new absorber material for EUVL binary mask

  • 이수진
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.124-124
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    • 2010
  • Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

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마이크로 Crosshatch 그루우브 표면패턴의 각도에 따른 미끄럼마찰특성 (Effect of Friction Property for Angles of Micro-scale Crosshatch Grooved Surface Pattern under Sliding Lubricated Contact)

  • 채영훈
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2006년도 춘계학술대회 논문집
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    • pp.165-166
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    • 2006
  • Surface pattern of tribological applications is an attractive technology of engineered surface. Therefore, friction reduction is considered to be necessary for improved efficiency of machines. This study investigated the effect of friction property fur angles of micro-scale crosshatch grooved surface pattern on bearing steel flat mated with pin-on-disk. We obtain sample which can be fabricated by photolithography process. We discuss friction property depend on an angle of cross-hatch grooved pattern. We can verify the lubrication mechanism as a Stribeck curve, which has a relationship between the friction coefficient and a dimensionless parameter under the lubrication condition. It was found that the friction coefficient was related to angle of crosshatch on surface, even when surface pattern was the same density.

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임펄스 표본화에 의한 탄성표면파 필터의 특성에 관한 연구 (A Study on Characteristics of SAW Filter by Impulse Sampling)

  • 이동윤;이종필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.325-326
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    • 2007
  • SAW filter was designed by optimization technique using impulse sampling. To carry out characteristics of SAW filter the uniform IDT was adapted. And SAW filter was fabricated on $LiNbO_3$ substrates to evaluate frequency response. To apply properties of photolithography, lift off method was used. Lift off method was superior to etch method in fabrication process, frequency response property was measured by network analyzer. From a measurement of acoustic property, SAW propagation velocity was 2663.5m/sec.

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Characteristics of hybrid mask mold for combined nanoimprint and photolithography technique

  • MOON KANSHUN;CHOI BANGLIM;PARK IN-SUNG;HONG SUNSHUM;YANG KIHYUN;LEE HEON;AHN JINHO
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
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    • pp.147-150
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    • 2005
  • We process a novel approach cal led combined nanoimprint and photolithography (CNP) to greatly simplify the fabrication in conventional nanoimprint lithography (NIL). In this study, a novel HMM with anti-sticking $SiO_2$ layer is introduced to improve the quality of transferred pattern. The surface property was investigated using contact angle measurement and spectrophotometer. Replicate pattern with CNP using HMM showed complete pattern transfer without defect.

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