• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.390.1-390.1
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• 2016

The present work explains the interfacial energetics of all oxide transparent photodiodes. The optical, structural and morphological of copper oxides were systematically analyse by UV-Visible spectrometer, X-Ray diffraction, Raman spectroscopy, Scanning electron microscopy (SEM) and Atomic force microscopy measurements (AFM). The UV-Visible result exhibits optical bandgap of Cu2O and CuO as 2.2 and 2.05 eV respectively. SEM and AFM result shows a uniform grain size distribution in Cu2O and CuO thin films with the average grain size of 45 and 40 nm respectively. The results of Current-Voltage and Kelvin probe force microscope characteristics describe the electrical responses of the Cu2O/ZnO and CuO/ZnO heterojunctions photodiodes. The obtained electrical response depicts the approximately same knee voltages with a measurable difference in the absolute value of net terminal current. More over the present study realizes the all oxide transparent photodiode with zero bias photocurrent. The presented results lay the template for fabricating and analysing the self-bias all oxide transparent photodetector.

• Current Photovoltaic Research
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• v.5 no.4
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• pp.145-149
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• 2017

Transition metal dichalcogenides (TMDs) have attracted much attention because of their excellent optical and electrical properties, which are the applications of next generation photoelectric devices. In this study, $MoS_2$, which is a representative material of TMDs, was formed by magnetic sputtering method and surface changes and optical characteristics were changed with thickness variation. In addition, by implementing the photodetector of $MoS_2/p-Si$ structure, it was confirmed that the change of the electrical properties rather than the change of the optical properties according to the thickness change of $MoS_2$ affects the photoresponse ratio of the photodetector. This result can be used to fabricate effective photoelectric devices using $MoS_2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.11
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• pp.720-724
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• 2016

Transparent n-type metal-oxide semiconductor of $MoO_x$ was applied on a p-type Si substrate for high-performing heterojunction photodetector. The formation of $MoO_x$ on Si spontaneously established a rectifying current flow with a high rectification ratio of 1,252.3%. Under light illumination condition, n-type $MoO_x$/p-type Si heterojunction device provided significantly fast responses (rise time : 61.28 ms, fall time : 66.26 ms). This transparent metal-oxide layer ($MoO_x$) would provide a functional route for various photoelectric devices, including photodetectors and solar cells.

• Current Photovoltaic Research
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• v.3 no.4
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• pp.116-120
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• 2015

A hybrid transparent conducting layer was applied for Si photodetector. To realize the hybrid transparent conducting layer, a 200 nm-thick ITO layer was deposited onto a Si substrate, following by a solution-processed AgNWs-coating on the ITO. The hybrid transparent conducting layer showed an excellent low electric resistance of $15.9{\Box}/{\Omega}$ with a high optical transparency of 86.89%. Due to these optical and electrical benefits, the hybrid transparent conductor-embedding Si diode provides an extremely high rectifying ratio of 3386. Under light-illumination, the hybrid transparent conductor device provides extremely high photoresponses for broad wavelengths. This implies that a functional design for hybrid transparent conductor is crucial for photoelectric devices and applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.417-422
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• 2017

A high-performing photoelectric device was realized for the $MoS_2$-embedded Si device. $MoS_2$-coating was performed by an available large-scale sputtering method. The $MoS_2$-layer coating on the p-Si spontaneously provides the rectifying current flow with a significant rectifying ratio of 617. Moreover, the highly optical transmittance of the $MoS_2$-layer provides over 80% transmittance for broad wavelengths. The $MoS_2$-embedded Si photodetector shows the sensitive photo-response for middle and long-wavelength photons due to the functional $MoS_2$-layer, which resolves the conventional limit of Si for long wavelength detection. The functional design of $MoS_2$-layer would provide a promising route for enhanced photoelectric devices, including photovoltaic cells and photodetectors.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.26 no.9
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• pp.434-440
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• 2014

Experiments were performed to verify if performance and characteristic curves obtained from the temperature differential defrosting method, where surface temperature is measured to judge defrosting condition, can be reproduced by the photoelectric technology where defrosting condition is judged by photoelectric sensors. The output voltage of a phototransistor and heating capacity, power consumption, and surface temperature of the outdoor heat exchanger are compared. The results showed that the photoelectric sensors can be used as a defrost control device. On-off control timings in temperature differential defrosting method are in good agreement with those predicted by the high and low threshold output voltages of the photoelectric sensor.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.244.1-244.1
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• 2015

The Ag Nanowire is one of the materials that are widely studied as alternatives to ITO and is available for large area, low cost process and the flexible transparent electrode. However, Ag nanowire can have the problem of a lack of stability at high temperatures, making this impossible to form a film. Using a structure of ITO/AgNW/ITO in photodetector device, we improved the properties of the ITO in the IR region and improved the thermal stability of the AgNW. The structure of ITO/AgNW/ITO has a high transmittance value of 89% at a wavelength of 900 nm and provide a good electrical property. The AgNWs embedded ITO film has a high transmittance, this is because of the light scattering from the AgNW. The thermal stability of the developed ITO/AgNWs/ITO films were investigated and found AgNWs embedded ITO films posses considerable high stability compared to the solo AgNWs on the Si surface. The ITO/AgNWs/ITO device showed a improved photo-response ratio compared to those of the conventional TC device in IR region. This is attributed to the high transmittance and low sheet resistance. We suggest an effective design scheme for IR-sensitive photodetection by using an AgNW embedded ITO.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.525-529
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• 2017

Molybdenum oxide ($MoO_3$) offers pivotal advantages for high optical transparency and low light reflection. Considering device fabrication, n-type $MoO_3$ semiconductor can spontaneously establish a junction with p-type Si. Since the energy bandgap of Si is 1.12 eV, a maximum photon wavelength of around 1,100 nm is required to initiate effective photoelectric reaction. However, the utilization of infrared photons is very limited for Si photonics. Hence, to enhance the Si photoelectric devices, we applied the wide energy bandgap $MoO_3$ (3.7 eV) top-layer onto Si. Using a large-scale production method, a wafer-scale $MoO_3$ device was fabricated with a highly crystalline structure. The $MoO_3/p-Si$ heterojunction device provides distinct photoresponses for long wavelength photons at 900 nm and 1,100 nm with extremely fast response times: rise time of 65.69 ms and fall time of 71.82 ms. We demonstrate the high-performing $MoO_3/p-Si$ infrared photodetector and provide a design scheme for the extension of Si for the utilization of long-wavelength light.

• Journal of the Korean Society of Marine Environment & Safety
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• v.17 no.3
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• pp.265-268
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• 2011

In this paper, we designed and fabricated that fog alarm equipment detected to crew in maritime fog. Developed fog alarm equipment was combined sensor and a transmitter-receiver module using emitting device unit and receiver photoelectric element infrared LED using only the receive sensitivity was low, miniaturization. Experiment of the fabricated device had a standard that was humidity 70%, the fabricated one generating artificial-fog within visibility 1km. When humidity is over 70%, the fabricated one generates alarming sounds for a warning. When developed device apply to vessel will be able to respond quickly, according to dense fog in the accident.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.5
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• pp.276-281
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• 2014

A high-responsive Schottky device has been achieved by forming a thin metal deposition on a Si substrate. Two-different metals of Ni and Ag were used as a Schottky metal contact with a thickness about 10 nm. The barrier height formation between metal and Si determines the rectifying current profiles. Ag-embedding Schottky device gave an extremely high response of 17,881 at a wavelength of 900 nm. An efficient design of Schottky device may applied for photoelectric devices, including photodetectors and solar cells.