Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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MoOx/Si Heterojunction for High-Performing Photodetector

MoOx 기반 실리콘 이종접합 고성능 광검출기

  • Park, Wang-Hee (Photoelectric and Energy Device Application Lab, Multidisciplinary Core Institute for Future Energies, Incheon National University) ;
  • Kim, Joondong (Photoelectric and Energy Device Application Lab, Multidisciplinary Core Institute for Future Energies, Incheon National University)
  • 박왕희 (인천대학교 차세대 융합에너지 중점연구소 광전에너지소자연구실) ;
  • 김준동 (인천대학교 차세대 융합에너지 중점연구소 광전에너지소자연구실)
  • Received : 2016.07.14
  • Accepted : 2016.10.07
  • Published : 2016.11.01
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Abstract

Transparent n-type metal-oxide semiconductor of $MoO_x$ was applied on a p-type Si substrate for high-performing heterojunction photodetector. The formation of $MoO_x$ on Si spontaneously established a rectifying current flow with a high rectification ratio of 1,252.3%. Under light illumination condition, n-type $MoO_x$/p-type Si heterojunction device provided significantly fast responses (rise time : 61.28 ms, fall time : 66.26 ms). This transparent metal-oxide layer ($MoO_x$) would provide a functional route for various photoelectric devices, including photodetectors and solar cells.

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References

  1. C. Zhao, Z. Liang, M. Su, P. Liu, W. Mai, and W. Xie, ACS Appl. Mater. Interfaces, 7, 25981 (2015). [DOI: http://dx.doi.org/10.1021/acsami.5b09492]
  2. C. Battaglia, X. Yin, M. Zheng, I. D. Sharp, T. Chen, S. Mcdonnell, A. Azcatl, C. Carraro, B. Ma, R. Maboudian, R. M. Wallace, and A. Javey, Nano Lett., 14, 967 (2014). [DOI: http://dx.doi.org/10.1021/nl404389u]
  3. D. Mutschau and K. Holzner, Sensors and Actuators, 36, 320 (1996). [DOI: http://dx.doi.org/10.1016/S0925-4005(97)80089-5]
  4. M. Bivour, J. Temmler, H. Steinkemper, and M. Hermle, Sol. Energy Mater. Sol. Cells, 142, 34 (2015). [DOI: http://dx.doi.org/10.1016/j.solmat.2015.05.031]
  5. S. Tokito, K. Noda, and Y. Taga, J. Phys. D, Appl. Phys., 29, 2750 (1996). [DOI: http://dx.doi.org/10.1088/0022-3727/29/11/004]
  6. H. You, Y. Dai, Z. Zhang, and D. Ma, J. Appl. Phys., 101, 026105 (2007). [DOI: http://dx.doi.org/10.1063/1.2430511]
  7. J. Bullock, D. Yan, A. Cuevas, Y. Wan, and C. Samundsett, Energy Procedia, 77, 446 (2015). [DOI: http://dx.doi.org/10.1016/j.egypro.2015.07.063]
  8. M. Dieterle and G. Mestl, Phys. Chem. Phys., 4, 822 (2002). [DOI: http://dx.doi.org/10.1039/b107046k]
  9. J. G. Kim and J. Kim, Sens. Actuators A, 217, 183 (2014). [DOI: http://dx.doi.org/10.1016/j.sna.2014.07.013]