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http://dx.doi.org/10.21218/CPR.2017.5.4.145

MoS2 Thickness-Modulated MoS2/p-Si Photodetector  

Kim, Hong-Sik (Department of Electrical Engineering and Photoelectric And Energy Device Application Lab (PEDAL), Incheon National University)
Kim, Joondong (Department of Electrical Engineering and Photoelectric And Energy Device Application Lab (PEDAL), Incheon National University)
Publication Information
Current Photovoltaic Research / v.5, no.4, 2017 , pp. 145-149 More about this Journal
Abstract
Transition metal dichalcogenides (TMDs) have attracted much attention because of their excellent optical and electrical properties, which are the applications of next generation photoelectric devices. In this study, $MoS_2$, which is a representative material of TMDs, was formed by magnetic sputtering method and surface changes and optical characteristics were changed with thickness variation. In addition, by implementing the photodetector of $MoS_2/p-Si$ structure, it was confirmed that the change of the electrical properties rather than the change of the optical properties according to the thickness change of $MoS_2$ affects the photoresponse ratio of the photodetector. This result can be used to fabricate effective photoelectric devices using $MoS_2$.
Keywords
$MoS_2$; Photodetector; 2D Materials; Molybdenum disulfide;
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