• 제목/요약/키워드: Photodiode

검색결과 532건 처리시간 0.024초

A Low Dark Current CMOS Image Sensor Pixel with a Photodiode Structure Enclosed by P-well

  • Han, Sang-Wook;Kim, Seong-Jin;Yoon, Eui-Sik
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제5권2호
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    • pp.102-106
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    • 2005
  • A low dark current CMOS image sensor (CIS) pixel without any process modification is developed. Dark current is mainly generated at the interface region of shallow trench isolation (STI) structure. Proposed pixel reduces the dark current effectively by separating the STI region from the photodiode junction using simple layout modification. Test sensor array that has both proposed and conventional pixels is fabricated using 0.18 m CMOS process and the characteristics of the sensor are measured. The result shows that the dark current of the proposed pixel is 0.93fA/pixel that is two times lower than the conventional design.

Oxygen 이온 주입의 전기적 고립을 통한 평면형 다중 양자 우물 구조의 애벌런치 & pn 및 p - i- n광 다이오드의 제작 및 전기적 특성 (The Fabrication and Electrical Characteristics of Planar Multi-Quantum well (MQW) Avalanche, MQW-pn, and p-i-n Photodiode Implantd with Oxygen for Electrical Isolation)

  • 시상기;김성준
    • 전자공학회논문지D
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    • 제34D권9호
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    • pp.43-49
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    • 1997
  • The dependence of the electrical properties in planar MQW - APD & pn, and p - i - n photodiode implanted with oxygen on the annealing emperatures and ion dose has been investigated. The oxygen implantation was performed for inter-device isolation. The leakage current of as-impanted p-i-n photodiode obtained was less than 50 nA. An annelaing temperature dependence study shows an abrupt increase of leakge current at 600.deg.C for all devices under study. This indicates that donor complex centers introduced by the chemical activity of oxygen increase with increasing annelaing temperatures. Furthermore, leakage current was highly correlated with oxygen dose due to th eimplanted related defects.

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2.5Gbps 광통신용 InGaAs separate absorption grading multiplication (SAGM) advanche photodiode의 제작 및 특성분석 (Fabrication and characterization of InGaAs Separate Absorption Grading Multiplication Avalache Photodiodes for 2.5 Gbps Optical Fiber Communication System)

  • 유지범;박찬용;박경현;강승구;송민규;오대곤;박종대;김흥만;황인덕
    • 한국광학회지
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    • 제5권2호
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    • pp.340-346
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    • 1994
  • 2.5Gbps 광통신시스템용 수광소자로서 charge plate층을 갖는 링구조의 separate absorption grading multiplication avalanche photodiode를 제작하고 그 특성을 조사 분석하였다. Avalanche Photodiode의 제작은 Metal-Organic Chemical Vapor Deposition 과 Liquid Phase Epitaxy법을 이용한 에피성장과 Br:Methanol을 이용한 채널식각 방법을 사용하였고, passivation과 평탄화는 photosensitive polyimide를 이용하였다. 제작된 ADP는 10nA 이하의 작은 누설전류를 나타내었고, -38~39 V의 항복전압을 나타내었다. 제작된 ADP를 GaAs FET hybrid 전치증폭기와 결합하여 2.5Gbps 속도에서 $2^{23}-1$의 길이를 갖는 입력 광신호에 대해 $ 10^{-10}$ Bit Error Rate에서 -31.0dBm의 수신감도를 얻었다.

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HPLC의 Photodiode Array Detector에 의한 과채류중의 Diamino Diphenyl Sulfone 분석 (Determination of Diamino Diphenyl Sulfone in Vegetable and Fruits by HPLC)

  • 김명희;명노홍;박성배
    • 한국식품위생안전성학회지
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    • 제11권2호
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    • pp.143-147
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    • 1996
  • This study was carried out to determine and confirm of Dapsone in vegetables and fruits which were illegally used for freshness. We have developed a simple, arpid and precise method that Dapsone can be analyzed in the cabbages, grapes and strawberry by HPLC with photodiode array detector. Experimental subjects were included 15 cases of cabbages, 10 cases of grapes and 10 cases of strawberries purchased in Kangwon, Chungchong province and the Seoul area. The results were obtained that Dapsone in the experimental subject was separated completely within 10 min. Detection limit of Dapsone was 0.5 ng. Aberage recoveries from cabbages, grapes and strawberries were 93.3$\pm$0.37%, 91.4$\pm$0.65% respectively. 4 cases of cabbages were detected Dapsone and the amount was below the 0.3 ppm. There was not detected Dapsone in any grape and strawberry samples.

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He-Ne 레이저를 이용한 와이어 방전가공기의 와이어 변위 측정 (Measurement of Wire Displacement of WEDM using He-Ne laser)

  • 홍준모;전병철;조용무;유웅재;김재도
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 1995년도 춘계학술대회 논문집
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    • pp.414-419
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    • 1995
  • The wire displacement of wire electric discharge machine has been measured using He-Ne laser. A measurement system consisted of He-Ne laser, A/D converter, 4 divided photodiode, amplifier, sensor process instrument, and personal computer. The processing parameters were varid with feed rate, wire tension, wire speed and voltage. The laser beam intensity transmitted on a 4 divided photodiode was varied by processing wire electric descharge machine with various process parameters. The 4 divided photodiode and amplifier were used to change the detected beam intensity into voltage. Variation of wire displacement was between 11 and 125 .mu. m. The wire tension was dominant on the variation of wire displacement among many parameters.

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Simultaneous Determination of Cinnamaldehyde and Coumarin in Oryeong-san using HPLC with Photodiode Array Detector

  • Seo, Chang-Seob;Shin, Hyeun-Kyoo
    • 대한한의학방제학회지
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    • 제18권2호
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    • pp.251-257
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    • 2010
  • Objectives : To develop and validate High-performance liquid chromatography-photodiode array methods for simultaneous determination of two constituents in Oryeong-san(ORS). Methods : Reverse-phase chromatography using a Gemini C18 column operating at $40^{\circ}C$, and photodiode array(PDA) detection at 280 nm, were used for quantification of the two marker components of ORS. The mobile phase using a gradient flow consisted of two solvent systems. Solvent A was $H_2O$ and solvent B was acetonitrile. Results : Calibration curves were acquired with correlation coefficient ($r^2$)>0.9999, and the relative standard deviation(RSD) values(%) for intra- and inter-day precision were not exceed 1.0%. The recovery rate of each compound was in the range of 93.01-104.16%, with an RSD less than 2.0%. The contents of two compounds in ORS were 1.10-3.72 mg/g. Conclusions : The established HPLC method will be helpful to improve quality control of ORS.

Characteristics of p-Cu2O/n-Si Heterojunction Photodiode made by Rapid Thermal Oxidation

  • Ismail, Raid A.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제9권1호
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    • pp.51-54
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    • 2009
  • Transparent Cuprous oxide film was deposited by rapid thermal oxidation (RTO) of Cu at $500^{\circ}C$/45s condition on textured single-crystal n-Si substrate to form $Cu_2O$/n-Si heterojunction photodiode. The Hall effect measurements for the $Cu_2O$ films showed a p-type conductivity. The photovoltaic and electrical properties of the junction at room temperature were investigated without any post-deposition annealing. I-V characteristics revealed that the junction has good rectifying properties. The C-V data showed abrupt junction and a built-in potential of 1 V. The photodiode showed good stability and high responsivity in the visible at three regions; 525 nm, 625-700 nm, and 750nm denoted as regions A, B, and C, respectively.

다채널 포토다이오드를 이용한 화염 자발광 특성에 대한 실험적 연구 (An Experimental study on characteristics of flame chemiluminescence using multi channel photo diode)

  • 장병화;권민준;김대해;이창엽;김세원
    • 한국연소학회:학술대회논문집
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    • 한국연소학회 2015년도 제51회 KOSCO SYMPOSIUM 초록집
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    • pp.319-320
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    • 2015
  • This study is aiming to establish the relationship between the optical signal of flame through an optical fiber and the equivalent ratio of flame. In this experiment, flame optical signal in a furnace is measured using photodiode. The combustion system is composed of 15W turbulent burner and industrial boiler, and flame chemiluminescence is measured at various experimental conditions. In this study, the flame chemiluminescence of turbulent premixed flame is measured using commercially available photodiode. It is experimentally investigated the relationship between equivalent ratio and photodiode signal.

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LED 통신 시스템의 데이터 전송 알고리즘 (Data Transmission Algorithm for LED Communication Systems)

  • 김경호;황유민;김진영
    • 한국위성정보통신학회논문지
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    • 제8권2호
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    • pp.44-49
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    • 2013
  • LED 통신은 LED(Light Emitting Diode)에서 나오는 가시광선을 이용해 정보를 전송하는 무선통신기술로 RF(Radio Frequency) 통신의 문제점인 주파수 할당, 인체 내 유해성, 보안의 취약성, 전자기기 간 간섭 등을 극복할 수 있는 기술이다. LED를 이용하여 조명과 통신을 동시에 사용할 수 있는 융합 기술로 유비쿼터스 환경에 적합하다. 본 논문에서는 LED, PD(Photodiode) 및 MCU(Micro Controller Unit)를 이용한 LED 통신 시스템의 데이터 전송 알고리즘을 개발하였고 구현하는 과정을 소개한다.

수직 방향 전류를 이용한 폴리실리콘 포토다이오드에 관한 연구 (Investigation of Polycrystalline Silicon Photodiodes Utilizing Vertically Directed Current Path)

  • 송영선;윤일구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.75-76
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    • 2006
  • In this paper, the polycrystalline silicon photodiodes utilizing vertically directed current path are investigated. The location of electrodes is considered with the grain direction and the current path. The relationships between grain boundaries and characteristics of photodiode are simulated to apply the vertically grown polycrystalline silicon to photodiodes. From the results, the vertically grown polycrystalline silicon photodiode is a potential candidate for CMOS image sensor. However, the increment of dark current related to grain boundaries should be reduced.

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