• 한국광학회:학술대회논문집
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• 한국광학회 2001년도 제12회 정기총회 및 01년도 동계학술발표회
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• pp.164-165
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• 2001

애벌란치형 광검출기(Avalanche Photodiode; APD)는 내부 이득을 갖고 있어 수신감도가 좋고 고속 동작이 가능하여 광통신에 있어서 매우 중요한 소자이다. 초기에는 공정의 용이성 등으로 인해 Ge을 소재로 하는 APD가 많이 사용되었으나 1.55 $\mu\textrm{m}$ 파장에서 광흡수 특성이 좋지 않고 전자와 정공의 이온화 계수비가 거의 같아 GB Product이 낮으므로 점차 이들 특성이 우수한 InP/InGaAs APD가 사용되었다. InGaAs는 밴드갭은 Ge보다 크지만 직접천이형 밴드구조를 갖기 때문에 1.67 $\mu\textrm{m}$까지 광흡수 특성이 좋고 소수캐리어의 이동도가 높아 고속동작에 유리하다. (중략)

• Journal of the Optical Society of Korea
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• 제18권5호
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• pp.594-597
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• 2014

We propose a novel approach to measure the residual phase noise (RPN) of a photodiode (PD) based on a two-tone correlation method. Compared with the previous measurements of the RPNs of PDs, this method is more convenient in practical application. In this method, two microwave sources and other components were placed in two isolated links sharing the same PD, so the noises of them were uncorrelated. With an FFT analyzer, the uncorrelated noises could be mostly suppressed while only the RPN of the PD was preserved. Voltage-dependent nonlinearities of PDs were studied previously. In this letter, we investigate the relationship between the RPN of the PD and the bias voltage on the PD. By changing the bias voltage, the difference of the RPN can be up to 10 dB.

• 대한의용생체공학회:학술대회논문집
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• 대한의용생체공학회 1993년도 춘계학술대회
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• pp.116-119
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• 1993

In this paper, we implemented a pulse wave type oximeter system that continuously measure the of oxyhemoglobin saturation of the arterial blood(SaO2) and pulse rate with non-invasively. We use the transmission type and reflection type transducer for comparison the percentage of hemoglobin oxgen saturation. The light Iron the two kind of LEDs is transmitted through the tissue, then received by a single photodiode with alternatively. By the phase sensitive detection circuit, the output of the photodiode is separated in to red and near infrared signal. We calculated a ratio of light transmittance between two kind of LEDs, and then, it is applied to the oxgen saturation coefficent calculation formular.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권6호
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• pp.789-796
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• 2014

A CMOS photo detection bias quenching circuit is developed to be used with single photon avalanche photodiodes (SPADs) operating in Geiger mode for the detection of weak optical signals. The proposed bias quenching circuits for the performance improvement reduce the circuit size as well as improve the performance of the quenching operation. They are fabricated in a $0.18-{\mu}m$ standard CMOS technology to verify the effectiveness of this technique with the chip area of only $300{\mu}m^2$, which is about 60 % of the previous reported circuit. Two types of proposed circuits with resistive and capacitive load demonstrated improved performance of reduced quenching time. With a commercial APD by HAMAMATSU, the dead time can be adjusted as small as 50 ns.

• 한국전자파학회논문지
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• 제11권5호
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• pp.822-829
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• 2000

본 논문에서는 무선광열에서 잡음광의 영향을 소거하는 동시에, 신호광원의 미세한 정렬변동에 의하여 빔의 진행방향이 이동할 경우 발생하는 출력전압의 변동을 막기 위한 자동정렬형 차동검출기를 개발하여 소개한다. 이 구조에서는 신호빔과 수직한 포토다이오드 배열을 사용하여 빔의 중심위치를 감지하고, x축과 y축에 해당하는 모토를 구동한다. 포토다이오드배열은 자신의 위치가 항상 신호빔의 중심에 오도록 자동적으로 조절하는 동시에 차동검출방식으로 잡음광의 영향을 소거하는 기능을 가지므로 무선광연결에서 매우 유용하게 쓸수 있다.

• 조명전기설비학회논문지
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• 제25권11호
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• pp.123-129
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• 2011

In terrestrial wireless optical communication links, atmospheric effects including turbulence, absorption and scattering have significant impact on the system performance. Based on the analysis of transmission in atmospheric channel concerning 830[nm] wavelength diode laser beam, performance of free space optical (FSO) link utilizing Galilean optics as a laser beam transmitting and receving optics, PIN photodiode as a detecting device. In this paper we designed optical link equation for received optical power and we analyze the atmospheric effects on the signal to noise ratio (SNR) and bit error rate (BER) of an terrestrial FSO system. We show that the possible communication distance for BER=$10^{-9}$ in proposed adverse atmospheric conditions.

• ETRI Journal
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• 제26권1호
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• pp.61-64
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• 2004

We have explored the fabrication of an InP/InGaAs single heterojunction bipolar transistor (HBT) and a wave guide p-i-n photodiode (PD) on two kinds of double stacked layers for the implementation of an optoelectronic millimeter-wave monolithic integrated circuit (OEMMIC). We applied a photosensitive polyimide for passivation and integration to overcome the large difference between the HBT and PD layers of around $3{\mu}m$. Our experiment showed that the RF characteristics of the HBT were dependent on the location of the PD layer, while the dc performances of the HBTs and PDs were independent of the type of stacked layer used. The $F_t$ and $F_{max}$ of the HBTs on the HBT/PD stacked layer were 10% lower than those of the HBTs on the PD/HBT stacked layer.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.117-123
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• 2014

The fabrication and characterization of a Si/ZnO thin film heterojunction ultraviolet photodiode has been presented in this paper. ZnO thin film of ~100 nm thick was deposited on <100> Silicon (Si) wafer by atomic layer deposition (ALD) technique. The Photoluminescence spectroscopy confirms that as-deposited ZnO thin film has excellent visible-blind UV response with almost no defects in the visible region. The room temperature current-voltage characteristics of the n-ZnO thin film/p-Si photodiodes are measured under an UV illumination of $650{\mu}W$ at 365 nm in the applied voltage range of ${\pm}2V$. The current-voltage characteristics demonstrate an excellent UV photoresponse of the device in its reverse bias operation with a contrast ratio of ~ 1115 and responsivity of ~0.075 A/W at 2 V reverse bias voltage.

• 전기학회논문지
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• 제64권12호
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• pp.1737-1741
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• 2015

A multi-channel CMOS transimpedance amplifier(TIA) array is realized in a $0.18-{\mu}m$ CMOS technology for the applications of panoramic scan LADAR systems. Each channel consists of a PIN photodiode and a feed-forward TIA that exploits an inverter input stage followed by a feed-forward common-source amplifier so as to achieve lower noise and higher gain than a conventional voltage-mode inverter TIA. Measured results demonstrate that each channel achieves $76-dB{\Omega}$ transimpedance gain, 720-MHz bandwidth, and -20.5-dBm sensitivity for $10^{-9}$ BER. Also, a single channel dissipates the power dissipation of 30 mW from a single 1.8-V supply, and shows less than -33-dB crosstalk between adjacent channels.

• 한국전기전자재료학회논문지
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• 제13권11호
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• pp.954-958
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• 2000

The characterization of zinc diffusion processes applied for high-speed avalanche photodiodes has been examined. The different diffusion process conditions for InP test structures were explored. The zinc diffusion profiles, such as the diffusion depth and the zinc dopant concentration, were examined using secondary ion mass spectrometry with varying the process variables and material parameters. It is observed that the diffusion profiles are severly impacted on the process parameters, such as the amount of Zn$_3$P$_2$ source and the diffusion time, as well as material parameters, such as doping concentration of diffusion layer. These results can be utilized for the high-speed avalanche photodiode fabrication.