• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2006.10a
• /
• pp.22-25
• /
• 2006

Long lasting phosphor materials are in great demand for their applications in the area of light emitting diodes (LEDs), commercial displays and warning signals. After glow longevity, brightness, photo-resistance and chemical and environment stability are most important qualities that are desired for these materials. Alumina as host lattice with various rare earth elements has been found to be good at the same time inexpensive material for the synthesis of the phosphor materials. This communication explored the effect of mixed rare earth metal on the luminescence properties of these materials for the first time. Various permutations and combinations of $Sr^{2+}$ and $Ba^{2+}$ have been investigated in order to achieve robust and high luminescence characteristics in the tailored phosphor materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.424-425
• /
• 2006

Zinc sulfide is a well-known host material of phosphor emitting different radiations dependent on different doping impurities of metallic ion. It emits green, blue, orange-yellow or white colors by doping with activators such as copper, silver, manganese and so on. In this study, manganese, copper and chlorine doped ZnS phosphor (ZnS:Mn,Cu,Cl) was synthesized by solid-state reaction method. The optical properties were investigated according to different concentrations of sulfur and activators used during the synthesis process.

• Proceedings of the Optical Society of Korea Conference
• /
• 1989.02a
• /
• pp.180-184
• /
• 1989

Overviews of vertical and horizontal GaAs/AlGaAs OEIC are shown. Researching double Zn diffusion process, we obtain Xj=At1/2-Bd1, where A=2.5${\mu}{\textrm}{m}$/[hr]1/2, B=0.625, of which process is recommended for exact diffusion interface area control of GaAs/AlGaAs. It is proved to be 100A/100A AlAs/GaAs using MOCVD by measurement of photo-luminescence which shows a luminescence peak corresponding to the 798.4nm wavelength calculated values of 38meV ground state above GaAs conduction band.

• Journal of the Korean Graphic Arts Communication Society
• /
• v.29 no.1
• /
• pp.23-33
• /
• 2011

This experimental focus to characterize luminescence properties related to CNT (Carbon Nano Tube) element dispersedly implanted in ZnS-based phosphor thin film panel fabricated by a screen printing method. More specifically FE-SEM measurements, L-V(Luminescence vs. Voltage) and photo luminescence were carried out to determine an optimum value of CNT concentration and film thickness for the thin film structure of CNT-ZnS:(Cu, Al) by the screen printing method. We confirmed that an optimum value of CNT concentration in the ZnS:(Cu, Al) film panel is about 0.75 wt% resulting that the electric conductivity is 1.6 times higher than that of pure CNT sample and showing that the luminescence intensity is increasing until the optimum concentration. Clearly, CNT is presenting in the luminescence process providing a pathway for the creation of hot electron and a channel for the electron-hole recombination but overly inserted CNT may hinder to produce the hot electron for making an avalanching process. In case of the overly doped CNT 1.0 wt% in the ZnS-based phosphor, the luminescence intensity is decreasing although the electric conductivity is exponentially increasing. Based on these results, we realized that hot electron occurred by the external electric field or exciton arose by the external photon source are reduced dramatically over the critical value of CNT concentration because CNT element provide various isolated residues in the composites of ZnS based phosphor rather than pathway or channel for the D-A(Donnor to Acceptor) pair transition or the radiative recombination of electron-hole.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2009.02a
• /
• pp.114.2-114.2
• /
• 2009

• Vacuum Magazine
• /
• v.4 no.4
• /
• pp.14-17
• /
• 2017

Recently, quantum-dots light emitting diodes (QLEDs) are considered as a next-generation display due to the superior luminescence behaviors, photo stability and narrow spectral emission bandwidth. Moreover, the emission color of QLEDs can be easily controlled by changing the dimension of quantum dots (QDs). A flexible display based on QLEDs can be achieved using low-cost solution process, such as a printing technology. Therefore, QLEDs are expected as a next generation display. In this document, recent progresses in QDs technology will be introduced.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.08a
• /
• pp.108.4-108
• /
• 1998

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.08a
• /
• pp.145.4-145
• /
• 1998

• Journal of the Korean Chemical Society
• /
• v.56 no.5
• /
• pp.577-582
• /
• 2012

Quinine quantitative analysis, photo-bleaching, fluorescence quenching, and urine analysis have been performed by means of a UV-LED fluorometer, which can be easily built and used in a high-school laboratory. The quinine detection range is estimated to be 0.05-80 ppm, enough for many classroom luminescence experiments. The quinine content in commercial tonic water is determined from the calibration curve, and UV photo-bleaching of this anti-malarial drug is demonstrated with clear wavelength dependence. Halide quenching of quinine fluorescence is also observed and the increase in quenching efficiency in the order of $Cl^-$, $Br^-$, and $I^-$ is evident. Urine analyses for the student volunteers have been carried out and the results clearly reveal excretion of the ingested quinine. The student participants are exuberant throughout the course of this study and sense the practices resourceful.

• Bulletin of the Korean Chemical Society
• /
• v.27 no.6
• /
• pp.841-846
• /
• 2006

$Y_2O_2S$:Eu phosphors were synthesized via solid-state reactions. $Y_2O_2S$:Eu phosphor particles of various sizes were obtained by varying the firing temperature and firing time. The photoluminescence properties of these $Y_2O_2S$:Eu phosphors were examined. In addition, the cathodoluminescence properties of the $Y_2O_2S$:Eu phosphors were examined for applied voltages of 3-8 kV. The relationship between the luminescence intensity and particle size of the$Y_2O_2S$:Eu phosphors was investigated. The photoluminescence and cathodoluminescence of the $Y_2O_2S$:Eu phosphors are affected differently by variations in particle size.