칩상호 광접속용 GaAs 광전집적회로의 기본 공정 I (OEIC 개관;Zn-확산;SL 제작을 위한 초박막 성장)

GaAs OEIC Unit Processes for chip-to-chip Interconnection I (OEIC overview ; Zn-diffusion ; SL layer growing)

Overviews of vertical and horizontal GaAs/AlGaAs OEIC are shown. Researching double Zn diffusion process, we obtain Xj=At1/2-Bd1, where A=2.5${\mu}{\textrm}{m}$/[hr]1/2, B=0.625, of which process is recommended for exact diffusion interface area control of GaAs/AlGaAs. It is proved to be 100A/100A AlAs/GaAs using MOCVD by measurement of photo-luminescence which shows a luminescence peak corresponding to the 798.4nm wavelength calculated values of 38meV ground state above GaAs conduction band.