• 제목/요약/키워드: Photo Resist

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Preparation of Colour Filter Photo Resists for Improving Colour Purity in Liquid Crystal Displays by Synthesis of Polymeric Binder and Treatment of Pigments

  • Yoon, Chun;Choi, Jae-Hong
    • Bulletin of the Korean Chemical Society
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    • v.30 no.8
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    • pp.1821-1826
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    • 2009
  • Liquid crystal display (LCD) devices contain a colour filter which can visualise colour images by transmitting or absorbing light. Colour properties of LCD mainly depend on colour materials such as pigments and polymeric binders. In this paper, colour properties were studied to improve colour quality of LCD. Generally, the colour properties can be classified into three categories which are colour purity, brightness and contrast ratio. For this study, photo resists were prepared by treatment of pigments and synthesis of polymeric binder. The treated pigments were dispersed and formulated with additives for preparing a photo resist that could be used for manufacturing colour filters. As a result of what we studied, type, mixture ratio and concentration of pigments were very important to improve colour purity of LCD device.

Fabrication of Photosensitive Polymer Resistor Paste and Formation of Finely-Patterned Thick Film Resistors (감광성 폴리머 저항 페이스트 제조와 미세패턴 후막저항의 형성)

  • Kim, Dong-Kook;Park, Seong-Dae;Yoo, Myong-Jae;Sim, Sung-Hoon;Kyoung, Jin-Bum
    • Applied Chemistry for Engineering
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    • v.20 no.6
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    • pp.622-627
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    • 2009
  • Using an alkali-solution developable photosensitive resin and a carbon black as a conductive filler, photo-patternable pastes for polymer thick film resistor were fabricated and evaluated. A photo solder resist (PSR), which is usually used as protecting layer of printed circuit board (PCB), was used as a photosensitive resin so that ultraviolet exposure and alkali-aqueous solution development of paste were possible. After fabricating the photosensitive polymer resistor paste, the electrical properties of thick film resistors were measured using PCB test boards. Sheet resistance was decreased with increasing amount of carbon black, but the developability was limited in excess loading of carbon black. The sheet resistance was also reduced by re-curing and the change rate was smaller in higher carbon black loading. Moreover, finely patterned meander-type thick film resistors were fabricated using photo-process and large resistance up to several tens of sheet resistance could be obtained in small area by this technique.

A Study of Mastless Pattern Fabrication using Stereolithography (광조형을 이용한 마스크리스 패턴형성에 관한 연구)

  • 정영대;조인호;손재혁;임용관;정해도
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2002.05a
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    • pp.503-507
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    • 2002
  • Mask manufacturing is a high COC and COO process in developing of semiconductor devices, because of the mass production tool with high resolution. Direct writing has been thought to be one of the patterning method to cope with development or small-lot production of the device. This study focused on the development of the direct, mastless patterning process using stereolithography tool for the easy and convenient application to micro and miso scale products. Experiments are utilized by three dimensional CAD/CAM as a mask and photo-curable resin as a photo-resist in a conventional stereo-lithography apparatus. Results show that the resolution of the pattern was achieved about 300 micron because of complexity of SLA apparatus settings, inspite of 100 micro of inherent resolution. This paper concludes that photo resist and laser spot diameter should be adjusted to get finer patterns and the proposed method is significantly feasible to mastless and low cost patterning with micro and miso scale.

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Resolution and Adhesion Properties of Solder Resist for Printed Circuit Board (인쇄회로기판용 solder resist의 해상성과 밀착력)

  • Chol, Sung-Ho;Hwang, Seong-Jin;Kim, Hyung-Sun
    • Korean Journal of Materials Research
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    • v.17 no.12
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    • pp.676-681
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    • 2007
  • According to progress rapidly digitalization, networked and mobilization of electronics industry, there are demands for being smaller, thinner, more light, and more efficient complex functions of electronic devices which are wireless devices, semi-conductors, packages and mobile devices. Therefore, the solder resist on a printed circuit board have been required with the high resolution and the eco-friendly materials in the surface treatments such as high heating process and coating process with electrolysis. In this study, the photoinitiator initiator and monomers of the solder resist were prepared with their contents for reducing the occurrence of the under-cut. We investigated the sample surface by UV/VIS spectrometer, FT-IR, OM after HASL and ENIG process. From our results, it is possible to get a high adhesion of resist with optimal contents between the photoinitiator initiator and monomers after surface treatments.

High-Aspect-Ratio Nanoscale Patterning in a Negative Tone Photoresist

  • Ryoo, Kwangki;Lee, Jeong Bong
    • Journal of information and communication convergence engineering
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    • v.13 no.1
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    • pp.56-61
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    • 2015
  • The demand for high-aspect-ratio structures has been increasing in the field of semiconductors and other applications. Here, we present the commercially available negative-tone SU-8 as a potential resist that can be used for direct patterning of high-aspect-ratio structures at the submicron scale and the nanoscale. Such resist patterns can be used as polymeric molds to create high-aspect-ratio metallic submicron and nanoscale structures by using electroplating. Compared with poly (methyl methacrylate) (PMMA), we found that the negative tone resist required an exposure dose that was less than that of PMMA of equal thickness by a factor of 100-150. Patterning of up to 4:1 aspect ratio SU-8 structures with a minimum feature size of 500 nm was demonstrated. In addition, nanoimprint lithography was studied to further extend the aspect ratio to realize a minimum feature size of less than 10 nm with an extremely high aspect ratio in the negative resist.

Fabrication of low power micro-heater based on electrochemically prepared anodic porous alumnia (다공성 알루미늄 산화물을 이용한 저전력 마이크로 히터의 제조)

  • Park, Seung-Ho;Byeon, Seong-Hyeon;Lee, Dong-Eun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.116.1-116.1
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    • 2016
  • 반도체 가스센서에서는 가연성 및 탄화수소계 가스를 감지 하기 위해서 $100{\sim}500^{\circ}C$ 이상의 동작온도를 필요로 한며, 이에 따라 반도체식 가스센서의 마이크로 히터 소재는 고온에서 열적 안정성이 있는 소재가 요구된다. 현재 상용화되고 있는 반도체식 가스센서는 실리콘(Silicon) 기반의 MEMS 기술을 이용한 가스센서이며, 구조적으로나 성능적 한계가 드러남에 따라 실리콘 이외의 다양한 재료의 MEMS 응용기술 개발이 필요한 실정이다. 본 연구에서는 이러한 실리콘의 재료적 한계를 극복하기 위해 다공성 알루미늄 산화물(AAO)을 기판으로 사용하여 마이크로 히터를 제작하였다. AAO의 제작에 앞서 CMP, 화학연마, 전해연마를 이용하여 적합한 전처리 공정을 선정하였고, AAO 제작 시 온도, 시간, 전압의 변수를 주어 마이크로 히터 기판에 적합한 공정을 탐색하였다. 마이크로 플랫폼은 MEMS 공정으로 제작되었으며, PR(Photo Resist)을 LPR(Liquid Photo Resist)과 DFR(Dry Film Resist)로 각각 2종 씩 선택하여 AAO에 적합한 제품을 선정하였다. 제작된 마이크로 히터는 $1.8mm{\times}1,8mm$로 소형화 하였고, 열손실의 제어를 위해 열확산 방지층을 추가하였다. 구동 온도, 소비전력, 장시간 구동시 안정성의 측정 및 평가는 적외선 열화상 카메라와 kiethly 2420 source meter를 이용하여 측정하였으며, 열확산 방지층의 유 무에 따른 온도 분포 및 소비전력을 비교평가 하였다. 최종적으로는 현재 사용화 되어있는 가스센서들의 소비전력과 비교 평가 하여 논의 하였다.

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Reactive Ion Etching of NiFe Film with Organic Resist Mask and Metal Mask by Inductively Coupled Plasma

  • Kanazawa, Tomomi;Motoyama, Shin-Ichi;Wakayama, Takayuki;Akinaga, Hiroyuki
    • Journal of Magnetics
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    • v.12 no.2
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    • pp.81-83
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    • 2007
  • Etching of NiFe films covered with an organic photo-resist or Ti was successfully performed by an inductively coupled plasma-reactive ion etching (ICP-RIE) system using $CHF_3/O_2/NH_3$ discharges exchanging $CHF_3$ for $CH_4$ gas gradually. Experimental results showed that the organic photo-resist mask can be applied to the NiFe etching. In the case of the Ti metal mask, it was found that the etching-selectivity Ti against NiFe was significantly varied from 7.3 to ${\sim}0$ by changing $CHF_3/CH_4/O_2/NH_3$ to $CH_4/O_2/NH_3$ discharges used in the ICP-RIE system. These results show that the present RIE of NiFe was dominated by a chemical reaction rather than a physical sputtering.

Internal Flow Analysis and Structural Design in Plastic Automatic Control Valve for the Semiconductor Chemical Liquid (반도체 약액용 자동제어 플라스틱 밸브의 내부 유동해석)

  • Lee, Gyu-Hoon;Lee, Eung-Suk;Lee, Min-Ki;Kim, Jin-Su;Bae, Il-Jin
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.21 no.2
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    • pp.311-315
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    • 2012
  • Diaphragm type noncontact automatic control valve is a valve for controling acidic PR(Photo Resist) liquid used in the semiconductor process. PR is photosensitive liquid that changes phases depending on light transmittance. PR is very toxic and expensive; the purpose of this paper is to address methods that prevent loss due to leaks. The design of noncontact precise automatic control valve is expected to play an important role in controlling fluid flow, therefore influencing energy conservation and environmental improvement. In this paper, diaphragm type automatic control valve's part design, assembly and simulation are introduced. Also, through the analysis of fluid flow the valve's internal velocity, pressure, and turbulent intensity are interpreted. This paper proposes to contribute to the improvement of the valve's performance.

Fabrication of Micro-channels for Wave-Micropump Using Stereolithography and UV Photolithography (광조형법과 UV 포토리소그래피를 이용한 웨이브 마이크로펌프 미세 채널 제작)

  • Loh, Byoung-Gook;Kim, Woo-Sik;Shim, Kwang-Bo
    • Journal of the Korean Society for Precision Engineering
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    • v.24 no.12
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    • pp.128-135
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    • 2007
  • Micro-channels for a wave micropump have been fabricated using the Stereolithography and UV Photolithography. The micro-channel with a channel height of $500\;{\mu}m$ was fabricated with stereolithography. UV photolithography was used for producing micro-channels with a channel length less than $100\;{\mu}m$. The fabrication process data including spinning rpm, pre-bake and post-bake time, and develop time for single layer and multiple layer 3D micro-structures using SU-8 photo resist are experimentally found. A film mask printed with a 40,000 dpi laser printer was used for UV lithography and micro-structures in the order of tens of micrometers in dimension were successfully fabricated.

Silicon Containing Bottom Anti-Reflective Coating for ArF Photolithography (ArF 포토리소그라피공정을 위한 실리콘이 함유된 반사방지막코팅)

  • Lee, Jun-Ho;Kim, Hyung-Gi;Kim, Myung-Woong;Lim, Young-Toek;Park, Joo-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.66-66
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    • 2006
  • Development of ArF Photo-lithography process has proceeded with the increase of numerical aperature (NA) and the decrease of resist thickness. It makes many problems such as cost and process complexity. A novel spin-on hard mask system is proposed to overcome many problems Spin-on hard mask composed of two layers of siloxane and carbon. The optical thickness of two layers is designed from reflectivity measurement at specified n, k respectively. The property of photo-resist shows different results according to Si contents. Si-contents was measured XPS(X-ray Photoelectron spectroscopy).

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