• 한국방사선학회논문지
• /
• 제15권4호
• /
• pp.525-531
• /
• 2021

양전자방출단층촬영기기의 검출기는 다수의 섬광 픽셀과 다수의 광센서를 사용하여 구성된다. 다수의 광센서를 사용함으로써 비용이 증가하고 신호처리가 복잡해진다. 본 연구에서는 적은 수의 광센서를 사용하여 비용의 감소와 간결한 신호처리가 가능한 검출기를 설계하였다. 섬광 픽셀과 적은 수의 광센서를 사용하고 모든 광센서에 빛을 전달하기 위해 광가이드를 사용하였다. 섬광 픽셀과 광가이드에는 광센서로 최대한의 빛을 전달하기 위해 반사체를 적용하였다. 반사체는 난반사체 및 거울반사체를 사용하였으며, 광가이드의 두께를 다르게 적용하여 평면 영상을 획득하였다. 획득된 평면 영상의 비교 분석을 통해 최적의 조합을 선택하였다. 그 결과 섬광 픽셀과 광가이드 모두 거울반사체를 사용하였을 경우, 모든 두께의 광가이드에서 우수한 평면 영상을 획득하였다. 광가이드는 섬광 픽셀의 영상이 형성된 지점의 분석 및 영상의 크기를 고려하여 3 mm 두께를 사용할 경우 최적의 영상이 획득되는 결과를 도출하였다.

• 한국전자통신학회논문지
• /
• 제7권3호
• /
• pp.579-583
• /
• 2012

환경적으로 발생하는 미세입자를 감지하는 시스템을 설계하고 제작하였다. 미세입자 감지시스템은 광산란 현상을 이용하였으며, 레이저다이오우드, 렌즈, aperture, 수광소자로 구성되어진다. 검출시스템의 성능을 좋게 하기 위해 aperture, 렌즈, 수광소자의 위치를 시뮬레이션을 통해 최적화하였다. 제작된 감지시스템으로 유입되는 미세입자에 의한 광산란을 감지하므로 빠른 응답특성를 가지는 미세입자 감지시스템을 제작하였다.

• 한국전기전자재료학회논문지
• /
• 제15권7호
• /
• pp.583-590
• /
• 2002

In this paper, a new Silicon on Insulator (SOI)-based photodetector was proposed, and its basic operation principle was explained. Fabrication steps of the detector are compatible with those of conventional SOI CMOS technology. With the proposed structure, RGB (Read, Green, Blue) which are three primary colors of light can be realized without using any organic color filters. It was shown that the characteristics of the SOI-based detector are better than those of bulk-based detector. To see the response characteristics to the green (G) among RGB, SOI and bulk NMOSFETS were fabricated using $1.5\mu m$ CMOS technology and characterized. We obtained optimum optical response characteristics at $V_{GS}=0.35 V$ in NMOSFET with threshold voltage of 0.72 V. Drain bias should be less than about 1.5 V to avoid any problem from floating body effect, since the body of the SOI NMOSFET was floated. The SOI and the bulk NMOSFETS shown maximum drain currents at the wavelengths of incident light around 550 nm and 750 nm, respectively. Therefore the SOI detector is more suitable for the G color detector.

• Journal of Radiation Protection and Research
• /
• 제43권4호
• /
• pp.131-136
• /
• 2018

Background: We investigated the current characteristics of a thin-film Ag electrode on a chemical vapor deposition (CVD) diamond. The CVD diamond is widely recognized as a radiation detection material because of its high tolerance against high radiation, stable response to various dose rates, and good sensitivity. Additionally, thin-film Ag has been widely used as an electrode with high electrical conductivity. Materials and Methods: Considering these properties, the thin-film Ag electrode was deposited onto CVD diamonds with varied deposition thicknesses (${\fallingdotseq}50/98/152/257nm$); subsequently, the surface thickness, surface roughness, leakage current, and photo-current were characterized. Results and Discussion: The leakage current was found to be very low, and the photo-current output signal was observed as stable for a deposited film thickness of 98 nm; at this thickness, a uniform and constant surface roughness of the deposited thin-film Ag electrode were obtained. Conclusion: We found that a CVD diamond radiation detector with a thin-film Ag electrode deposition thickness close to 100 nm exhibited minimal leakage current and yielded a highly stable output signal.

• 한국정밀공학회지
• /
• 제12권7호
• /
• pp.46-52
• /
• 1995

This paper proposes methodologies for the development of radiation thermometer using InSb photo-detector of which spectral sensitivity is excellent over the wave length range of 2 .mu. m .approx. 5 .mu. m. The proposed radiation thermometer has broad measurement range from normal to high, up to more than 1000 .deg. C, with high accuracy, and can measure temperature on the material surface or heat emission noncontactely with high speed. Optical system was consisted of two convex lens with foruslength of 15.2mm for infrared lay focusing, Ge filter to cut the short wave length components and sapphire filter to cut the long wave length components. The cold shielded was installed in the whole surface of the light-absorbing element to remove the error- mometer, calibration using black body furnace which has temperature range of 90 .deg. C .approx. 1100 .deg. C was carried out, and temperature calaibration curve was obtained by exponential function curvefitting. The result shows maximum error less than 0.24%(640K .+-. 1.6K) over the measurement range of 90 .deg. C .approx. 700 .deg. C, and from this result the usefulness of the developed thermometer has been confirmed.

• 제어로봇시스템학회:학술대회논문집
• /
• 제어로봇시스템학회 2003년도 ICCAS
• /
• pp.49-52
• /
• 2003

Two types of ozone monitors using UV absorption method were tried in consideration of cost of the monitor and precision in measuring. The high concentration ozone monitor for high concentration real time ozone monitoring from ozone generator was composed of a low pressure mercury lamp as UV source, a photo multiplier tube as UV detector and signal processing unit for the most part. This structure could be very useful for low price high concentration ozone monitor due to simple system structure and fairly good monitoring characteristics. The developed system showed good linear output characteristics to ozone in the measuring concentration range of 0.05 and 2 wt.%. For accuracy ambient ozone monitoring in ambient in ppm level, the system composed of a high power pulsed xenon lamp as UV source, an optical spectrometer with a high sensitivity linear CCD array as UV detector and signal processing unit in brief speaking was proposed our study for the first time in the world. The developed system showed good linearity and sensitivity in relative low measuring range between 10ppm and 10,000ppm, and showed some feasibility of high resolution ozone monitor using CCD array as photodetector.

• 한국화재소방학회논문지
• /
• 제24권1호
• /
• pp.46-53
• /
• 2010

주택화재 예방을 위해 10년 동안 전지 교체 없이 지속적으로 유지가 되도록 회로 설계된 저소비 전력의 광전식 단독경보형감지기의 개발 경험을 보고한다. 시장규모가 국내에 비해 100배 이상 큰 일본을 대상으로 인증을 받도록 개발되었고, KFI 규격과 JFEII에 대한 시험 규격 비교 검토도 수행되었다. 감지기의 경보는 부저와 표시 LED를 통해 표현되며, 경보와 고장 및 화재 시의 동작 주기와 동작 시간이 기술되어 있다. 소비 전류를 줄이기 위해 적용된 주요 전자 회로 부분과 구현된 감지기의 동작 특성 분석 결과가 나타나 있다. 또한, 구현된 감지기의 소비 전류 측정값과 전지의 방전 특성 실험 결과를 통해 10년 동안 적용 가능함을 나타내었다.

• 센서학회지
• /
• 제14권4호
• /
• pp.272-277
• /
• 2005

A CMOS active pixel sensor has been designed and fabricated using standard 2-poly and 4-metal $0.35{\mu}m$ CMOS processing technology. The CMOS active pixel sensor has been made up of a unit pixel having a highly sensitive PMOSFET photo-detector and electronic shutters that can control the light exposure time to the PMOSFET photo-detector, correlated-double sampling (CDS) circuits, and an 8-bit two-step flash analog to digital converter (ADC) for digital output. This sensor can obtain a stable photo signal in a wide range of light intensity. It can be realized with a special function of an electronic shutter which controls the light exposure-time in the pixel. Moreover, this sensor had obtained the digital output using an embedded ADC for the system integration. The designed and fabricated image sensor has been implemented as a $128{\times}128$ pixel array. The area of the unit pixel is $7.60{\mu}m{\times}7.85{\mu}m$ and its fill factor is about 35 %.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.798-801
• /
• 2001

we have investigated a characteristic of a vibration displacement detector, which was made with a photocoupler. Output signals of the detector were dominant at 700Hz of the frequency of vibrator, and It was maximum, when the amplitude of input signal had been at 1.1V. The detector will be used in measuring the surface roughness of substrates.

• Nuclear Engineering and Technology
• /
• 제54권11호
• /
• pp.4215-4219
• /
• 2022

The Cd_0.95Mn_0.05Te_0.98Se_0.02 (CMTS) ingot was grown by the vertical Bridgman technique at low pressure. All wafers showed high resistivity, which suggests potential as a room-temperature semiconductor detector. The resistivity of the CMTS planar detector was 1.47 × 10¹⁰ Ω·cm and mobility lifetime product of electrons was 1.29 × 10^-3 cm²/V. The spectroscopic property with Am-241 and Co-57 was evaluated. The energy resolution about 59.5 keV gamma-ray of Am-241 was 11% and the photo-peak of 122 keV gamma-ray from Co-57 was clearly distinguished. The result shows the first detector-grade CMTS in the world and proves CMTS's potential as a radiation detector operating at room temperature.