Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
권호 표지
DOI QR코드

DOI QR Code

A CMOS active pixel sensor with embedded electronic shutter and A/D converter

전자식 셔터와 A/D 변환기가 내장된 CMOS 능동 픽셀 센서

  • Yoon, Hyung-June (Department of Electronics, Kyungpook National University) ;
  • Park, Jae-Hyoun (Department of Electronics, Kyungpook National University) ;
  • Seo, Sang-Ho (Department of Electronics, Kyungpook National University) ;
  • Lee, Sung-Ho (Department of Electronics, Kyungpook National University) ;
  • Do, Mi-Young (Department of Electronics, Kyungpook National University) ;
  • Choi, Pyung (Department of Electronics, Kyungpook National University) ;
  • Shin, Jang-Kyoo (Department of Electronics, Kyungpook National University)
  • 윤형준 (경북대학교 전자공학과) ;
  • 박재현 (경북대학교 전자공학과) ;
  • 서상호 (경북대학교 전자공학과) ;
  • 이성호 (경북대학교 전자공학과) ;
  • 도미영 (경북대학교 전자공학과) ;
  • 최평 (경북대학교 전자공학과) ;
  • 신장규 (경북대학교 전자공학과)
  • Published : 2005.07.30
Download PDF
⟨ Previous Next ⟩

Abstract

A CMOS active pixel sensor has been designed and fabricated using standard 2-poly and 4-metal $0.35{\mu}m$ CMOS processing technology. The CMOS active pixel sensor has been made up of a unit pixel having a highly sensitive PMOSFET photo-detector and electronic shutters that can control the light exposure time to the PMOSFET photo-detector, correlated-double sampling (CDS) circuits, and an 8-bit two-step flash analog to digital converter (ADC) for digital output. This sensor can obtain a stable photo signal in a wide range of light intensity. It can be realized with a special function of an electronic shutter which controls the light exposure-time in the pixel. Moreover, this sensor had obtained the digital output using an embedded ADC for the system integration. The designed and fabricated image sensor has been implemented as a $128{\times}128$ pixel array. The area of the unit pixel is $7.60{\mu}m{\times}7.85{\mu}m$ and its fill factor is about 35 %.

Keywords

References

  1. E. R. Fossum, 'Digital camera system on a chip', IEEE Micro, vol. 18, issue . 3, pp. 8- 15, 1998
  2. E. R. Fossum, N. Terann ishi, A. J. P. Theuwissen, and J. Hynecek, ' Forward special issue on solidstate image sensors', IEEE Transactions on Electron Devices, vol. 50, no. 1 , pp. 1-3, 2003 https://doi.org/10.1109/TED.2002.807524
  3. C. Brown, 'http://www.eet.com/articie/showArticie. jhtml/articleld=1830 5338'
  4. W. Zhang and M. Chan, 'A high gain N-well/gate tied PMOSFET image sensor fabricated from a standard CMOS process', IEEE Transactions on Electron Devices, vol. 48, no. 6, pp. 1097-1102, 2001 https://doi.org/10.1109/16.925233
  5. J. H. Park , S. H. Seo, I. s. Wang, H. J. Yoon, J. K. Shin, P. Choi, Y. C. Jo, and H. Kim, 'High ly sensitive PMOSFET photodetector and its application to CMOS act ive pixel sensor', Sensor and Materials, vol. 15, no. 7, pp. 361-370, 2003
  6. 서상호, 박재현, 이준규, 왕인수, 신장규, 조영창, 김훈, '고감도 능동픽셀센서를 위한 PMOSFET 광검출기의 특성', 센서학회지, 제12권, 제4호, pp. 149155, 2003 https://doi.org/10.5369/JSST.2003.12.4.149
  7. T. Harris, 'How cameras work', http://entertainment. howstu-ffworks.com/camera
  8. C. H. Aw and B. A. Wooley, 'A 128 x 128-pixel standard-CMOS image sensor with electronic shutter', IEEE J. of Solid-State Circuits, vol. 31, no. 12, pp. 1922-1930, 1996 https://doi.org/10.1109/4.545814
  9. M. Wany and G. P. Israel , 'CMOS image sensor with NMOS-only global shutter and enhanced responsivity', IEEE Transactions on Electron Devices, vol. 50, no. 1, pp. 57-62, 2003 https://doi.org/10.1109/TED.2002.807253
  10. O. Y. Pecht, B. Pain, C. Staller, C. Clark, and E. Fossum, 'CMOS activ e pixel star tracker with regi nal e lectro nic shutter', IEEE J. of Solid-State Circuits, vol. 32, no. 2, pp. 285-288, 1997 https://doi.org/10.1109/4.551925
  11. B. Razavi, 'Principles of data conversion system design' , IEEE press, New York, 1995