• 대한전자공학회논문지
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• 제25권11호
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• pp.1342-1349
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• 1988

플리즈마 변수로서 가스조성과 압력 및 RF 전력이 인 및 붕소가 각각 다른 양으로 주입된 다결정 실리콘의 식각율 변화에 미치는 영향을 고찰하였다. $POCl_3$에 의해 인이 주입된 경우, 염소조성보다 불소조성이 많은 영역, 즉 $Cl_2$와 $SF_4$의 비가 17대 33일 때, 가장 큰 비등방성과 가장 작은 선폭손실을 달성하였다. 플라즈마 조건에 관계없이 주입된 불순물 농도의 증가에 다라, 인이 주입된 경우는 식각율이 증가하였고, 붕소가 주입된 경우는 식각율이 반대로 감소하였다. 또한, 급속 열처리에 의한 활성화 시간의 함수로서 인이 주입된 다결정실리콘의 식각율변화를 측정한 결과, 도우핑 농도뿐 아니라 활성화된 운반자, 즉 전자의 농도가 그 식각율 증가에 중요한 역할을 한다는 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.454-455
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• 2009

Selective emitter structure have an important research subject for crystalline silicon solar cells because it is used in production for high efficiency solar cells. A selective emitter structure with highly doped regions underneath the metal contacts is widely known to be one of the most promising high-efficiency solution in solar cell processing. Since most of the selective emitter processes require expensive extra masking and double steps process. Formation of selective emitters is not cost effective. One method that satisfies these requirements is the method of screen-printing with a phosphorus doping paste. In this paper we researched two groups of selective emitter structure process. One was using dopant paste, and the other was using solid source, in order to compare their uniformity, sheet resistance and performance condition time.

• Current Photovoltaic Research
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• 제5권4호
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• pp.113-121
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• 2017

The researches on the silicon-based thin films are being actively carried out. The silicon-based thin films can be made as amorphous, microcrystalline and mixed phase and it is known that the optical bandgap can be controlled accordingly. They are suitable materials for the fabrication of single junction, tandem and triple junction solar cells. It can be used as a doping layer through the bonding of boron and phosphorus. The carbon and oxygen can bond with silicon to form a wide range of optical gap. Also, The optical gap of hydrogenated amorphous silicon germanium can be lower than that of silicon. By controlling the optical gaps, it is possible to fabricate multi-junction thin film silicon solar cells with high efficiencies which can be promising photovoltaic devices.

• 한국수소및신에너지학회논문집
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• 제33권1호
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• pp.105-112
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• 2022

Copper (Cu)-based catalysts have been widely used in a methanol steam reforming (MSR) reaction for hydrogen production for air-independent propulsion (AIP) applications and their good catalytic activities have attracted much attention. However, the agglomeration of the catalytic active site Cu causes deteriorating the catalytic performance and suppression of Cu agglomeration is a crucial issue in the AIP applications that the MSR system is typically operated at 250-300℃ for a long time. R. Sakai et al. recently showed a computational study on the anchoring effect that reduces an agglomeration of active sites by doping in a supporter. In order to present the anchoring effect on 𝛾-Al₂O₃ supported Cu-based catalysts, in this study, the adsorption energies of Cu on X-doped (X=ruthenium, phosphorus, silicon) 𝛾-Al₂O₃ were calculated and Cu adsorption energy decreased due to a change of the electronic structure originated from doping, thereby proving the anchoring effect.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.62-66
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• 2002

The conventional floating zone(FZ) crystal and Czochralski(CZ) silicon crystal have resistivity variations longitudinally as well as radially The resistivity variations of the conventional FZ and CZ crystal are not conformed to requirement of dopant distribution for power devices and thyristors. These resistivity variations in conventional cystals limits the reverse breakdown voltage that could be achieved and forced designers of high power diodes and thyristors to compromise the desired current-voltage characteristics. So to produce high Power diodes and thyristors, Neutron Transmutation Doping(NTD) technique is the one method just because NTD silicon provides very homogeneous distribution of doping concentration. This procedure involves the nuclear transmutation of silicon to phosphorus by bombardment of neutron to the crystal according to the reaction $^{30}$ Si(n,${\gamma}$)longrightarrow$^{31}$ Silongrightarrow(2.6 hr)$^{31}$ P+$\beta$$^{[-10]}$ . The radioactive isotope $^{31}$ Si is formed by $^{31}$ Si capturing a neutron, which then decays into the stable $^{31}$ P isotope (i.e., the donor atom), whose distribution is not dependent on the crystal growth parameters. In this research, neutron was irradiated on FZ silicon wafers which had high resistivity(1000~2000 Ω cm), for 26 and 8.3hours for samples of HTS-1 and HTS-2, and 13, 3.2, 2.0 hours for samples of IP-1, IP-2 and IP-3, respectively, to compare resistivity changes due to time differences. The designed resistivities were approached, which were 2.l Ωcm for HTS-1, 7.21 Ω cm for HTS-2, 1.792cm for IP-1, 6.83 Ωcm for IP-2, 9.23 Ωcm for IP-3, respectively. Point defects were investigated with Deep Level Transient Spectroscopy(DLTS). Four different defects were observed at 80K, 125K, 230K, and above 300K.

• 한국표면공학회지
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• 제56권5호
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• pp.299-308
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• 2023

In this study, phosphorus (P)-doped nickel cobaltite (P-NiCo₂O₄) and nickel-cobalt layered double hydroxide (P-NiCo-LDH) were synthesized on nickel (Ni) foam as a conductive support using hydrothermal synthesis. The thermal properties, crystal structure, microscopic surface morphology, chemical distribution, electronic state of the constituent elements on the sample surface, and electrical properties of the synthesized P-NiCo₂O₄ and P-NiCo-LDH samples were analyzed using thermogravimetric analysis-differential scanning calorimetry (TGA-DSC), X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), cyclic voltammetry (CV), galvanostatic charge-discharge (GCD), and electrochemical impedance spectroscopy (EIS). The P-NiCo₂O₄ electrode exhibited a specific capacitance of 1,129 Fg^-1 at a current density of 1 Ag^-1, while the P-NiCo-LDH electrode displayed a specific capacitance of 1,012 Fg^-1 at a current density of 1 Ag-1. When assessing capacity changes for 3,000 cycles, the P-NiCo₂O₄ electrode exhibited a capacity retention rate of 54%, whereas the P-NiCo-LDH electrode showed a capacity retention rate of 57%.

• 한국진공학회지
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• 제21권6호
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• pp.301-311
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• 2012

결정질 태양전지 등의 도핑 공정에 적용하기 위한 플라즈마 제트 장치의 기초 방전 특성을 조사한다. 대기압에서의 아르곤 플라즈마 제트와 대기 압력변화에 대한 대기 플라즈마 제트, 그리고 아르곤 분위기 압력 변화에 대한 플라즈마 제트의 전류-전압은 전형적인 정상 글로우 방전의 특성을 갖는다. 대기압 플라즈마 제트의 방전 전압은 약 2.5 kV의 높은 전압이 요구되며, 대기 및 아르곤 플라즈마 제트는 200 Torr 이하의 낮은 압력에 대한 방전 전압은 약 1 kV가 된다. 도핑용 실리콘 웨이퍼에 조사되는 단일 채널 플라즈마 제트의 전류는 인가전압의 조정에 의하여 수 10~50 mA의 고 전류를 용이하게 얻는다. 플라즈마 제트를 웨이퍼에 조사하는 경우에 웨이퍼의 온도 상승은 정상상태에서 약 $200^{\circ}C$가 된다. 실리콘 웨이퍼에 도핑 용재인 액상의 인산을 도포하여 플라즈마를 조사한 결과 얻어진 인 원자의 도핑 분포는 플라즈마 제트 도핑의 가능성을 보여준다.

• Journal of Korean Vacuum Science & Technology
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• 제6권3호
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• pp.120-125
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• 2002

The aim of the present work is to optimized the annealing parameter in both front and back screen printed contacts realization on p-type multicrystalline silicon and with phosphorus diffused. The RTA treatments were carried out at various temperatures from 600 to 850$\^{C}$ and annealing time ranging from 3 min to 5 min in air, O$_2$and N$_2$ ambiance. The contacts parameters are obtained according to Transmission Line Model measurements. A good RTA cycle is obtained with a temperature plateau of 700$\^{C}$-750$\^{C}$ and annealing ambiance of air. Several processing parameters required for good cell efficiency are discussed with an emphasis placed on the critical role of the glass frit in the aluminum paste. A anamolus behaviour of Aluminum n-doping on p-type Si wafer, contact at high temperature have also been studied.

• 전자공학회논문지D
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• 제35D권5호
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• pp.48-53
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• 1998

Poly-Si TFT's could be fabricated on glass substrates by metal induced lateral crystallization (MILC) method at 450.deg. C. Channel area of the poly-Si TFT's was laterally crystallized from source and drain areas, where a thn nickel film was deposited. Dopants activation for the formation of source and drain region could be achieved by thermal annealing at 450.deg. C after the ion mass doping of phosphorus. The field effect mobility of thus formed N-channel poly-Si TFT's was 76cm$^{2}$/Vs, and the on/off current ratio was higher than 7E6.

• E2M - 전기 전자와 첨단 소재
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• 제4권2호
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• pp.97-104
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• 1991

W/Si의 조성비가 2.6인 CVD텅스텐 실리사이드를 어닐링처리 하지 않고 바로 wet oxidation하여 polycide구조에서 다결정 실리콘 내의 인의 농도가 실리사이드의 산화반응 속도에 미치는 영향을 조사하여 직선-포물선적 속도법칙을 토대로 하여 분석 조사하였다. 텅스텐 실리사이드의 산화속도는 다결정 실리콘 내의 도편트 인의 농도가 증가함에 따라 증가하는 것으로 나타났다. 직선적 속도상수와 포물선적 속도상수 모두 인의 농도가 증가함에 따라 증가하는 경향을 보였다. 직선적 속도상수에 대한 활성화 에너지는 인의 농도가 증가함에 따라 감소하였으나 포물선적 속도상수에 대한 활성화 에너지는 인 농도와 무관한 것으로 나타났다.