• Journal of Mechanical Science and Technology
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• v.19 no.6
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• pp.1378-1389
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• 2005

This work provides the fundamental knowledge of energy transport characteristics during very short-pulse laser heating of semiconductors from a microscopic viewpoint. Based on the self-consistent hydrodynamic equations, in-situ interactions between carriers, optical phonons, and acoustic phonons are simulated to figure out energy transport mechanism during ultrafast pulse laser heating of a silicon substrate through the detailed information on the time and spatial evolutions of each temperature for carriers, longitudinal optical (LO) phonons, acoustic phonons. It is found that nonequilibrium between LO phonons and acoustic phonons should be considered for ultrafast pulse laser heating problem, two-peak structures become apparently present for the subpicosecond pulses because of the Auger heating. A substantial increase in carrier temperature is observed for lasers with a few picosecond pulse duration, whereas the temperature rise of acoustic and phonon temperatures is relatively small with decreasing laser pulse widths. A slight lagging behavior is observed due to the differences in relaxation times and heat capacities between two different phonons. Moreover, the laser fluence has a significant effect on the decaying rate of the Auger recombination.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.24-25
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• 2000

After the invention of the femtosecond pulse lasers, generating and detecting the coherent optical phonons in various materials became possible. In bulk GaAs, which is a polar material, the coherent LO phonons are known to be generated by the ultrafast screening of the surface space-charge fields. However, little is known about the generation mechanisms of coherent phonons in GaAs quantum structures. (omitted)

• Journal of Mechanical Science and Technology
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• v.20 no.8
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• pp.1292-1301
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• 2006

This article investigates numerically the carrier-phonon interactions in thin gallium arsenide (GaAs) film structures irradiated by subpicosecond laser pulses to figure out the role of several recombination processes on the energy transport during laser pulses and to examine the effects of laser fluences and pulses on non-equilibrium energy transfer characteristics in thin film structures. The self-consistent hydrodynamic equations derived from the Boltzmann transport equations are established for carriers and two different types of phonons, i.e., acoustic phonons and longitudinal optical (LO) phonons. From the results, it is found that the two-peak structure of carrier temperatures depends mainly on the pulse durations, laser fluences, and nonradiative recombination processes, two different phonons are in nonequilibrium state within such lagging times, and this lagging effect can be neglected for longer pulses. Finally, at the initial stage of laser irradiation, SRH recombination rates increases sufficiently because the abrupt increase in carrier number density no longer permits Auger recombination to be activated. For thin GaAs film structures, it is thus seen that Auger recombination is negligible even at high temperature during laser irradiation.

• Journal of Power System Engineering
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• v.17 no.5
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• pp.44-51
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• 2013

This paper proposes and analyzes recycling of optical phonons emitted by nonradiative decay, which is a major thermal management concern for high-power light emitting diodes (LED), by introducing an integrated, heterogeneous barrier cooling layer. The cooling is proportional to the number of phonons absorbed per electron overcoming the potential barrier, while the multi-phonon absorption rate is inversely proportional to this number. We address the theoretical treatment of photon-electron-phonon interaction/transport kinetics for optimal number of phonons (i.e., barrier height). We consider a GaN/InGaN LED with a metal/AlGaAs/GaAs/metal potential barrier and discuss the energy conversion rates. We find that significant amount of heat can be recycled by the barrier transition cooling layer.

• Proceedings of the Korean Vacuum Society Conference
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• 1992.07a
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• pp.17-17
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• 1992

In this talk, our recent progress in experiment study on microscopic surface phonons has been reviewed. After the brief introduction concerning the concept of surface phonons, exprimental apparatus of HREELS and the principle of the measurment for surface phonon dispersions, I show the experimental data of some solide surfaces. The following points are discussed ; (1) lattice dynamical analysis of the phonon dispersions of some transi tion metal carbide (100) surfaces indicates the large changes in the force constant near the surface, which is consistent wi th a rippled structure of a topmost layer. (2) the phonon dispersions of a graphite overlayer show the modified phonon structure, which indicates that the thickness of the overlayer is one atomic layer, and in addition, the electronic structure is also modified. (3) The phonon structure of $LaB_6$ (100) surface is discussed. Lastly I telJ about new technology of extreme high vaccum less than $10^{-10}$ Pa.EX> Pa.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2165-2170
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• 2007

At nanoscales, the Boltzmann transport equation (BTE) can best describe the behavior of phonons which are energy carriers in crystalline materials. Through this study, the phonon transport in some micro/nanoscale problems was simulated with the Monte Carlo method which is a kind of the stochastic approach to the BTE. In the Monte Carlo method, the superparticles of which the number is the weighted value to the actual number of phonons are allowed to drift and be scattered by other ones based on the scattering probability. Accounting for the phonon dispersion relation and polarizations, we have confirmed the one-dimensional transient phonon transport in ballistic and diffusion limits, respectively. The thermal conductivity for GaAs was also calculated from the kinetic theory by using the proposed model. Besides, we simulated the electrostatic discharge event in the NMOS transistor as a two-dimensional problem by applying the Monte Carlo method.

• Journal of the Optical Society of Korea
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• v.14 no.4
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• pp.403-408
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• 2010

The acoustic properties of anti-inflammatory egonol were investigated by using micro-Brillouin scattering spectroscopy, by use of a 6-pass tandem Fabry-Perot interferometer and an optical microscope specially modified for spectroscopic purposes. The measured Brillouin spectrum was composed of a central peak centered at zero and a Brillouin doublet arising from the longitudinal acoustic waves, i.e. propagating density fluctuations. For the first time, the glass transition of egonol was identified to be about $5^{\circ}C$ at which the Brillouin peak position and the half width showed abrupt changes. The substantial damping of acoustic phonons of egonol near the glass transition temperature indicated that the contribution of internal relaxation processes such as small-amplitude librations of side chains to the damping of acoustic phonons may be substantial depending on the internal structure of molecules.

• Progress in Superconductivity
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• v.9 no.2
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• pp.127-135
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• 2008

We study the effects of phonon interaction on the superconducting pairing in the high $T_c$ superconductors (HTSC). Using coupled BCS gap equations, we found that phonon interaction can induce a s-wave component to the d-wave gap, mediated by Antiferromagnetic (AFM) spin fluctuations, in the (D+iS) form. However, $T_c$ is not enhanced compared to the pure d-wave pairing without phonon interaction. On the other hand, anisotropic phonon interaction can dramatically enhance the d-wave pairing and $T_c$ itself, together with the AFM spin fluctuation interaction. This ($D_{AFM}+D_{ph}$) type pairing exhibits strongly reduced isotope coefficient despite the large enhancement of $T_c$ by phonon interaction.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.113-127
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• 2014

For more than five decades, silicon has dominated the semiconductor industry that supports memory devices, ICs, photovoltaic devices, etc. Photoluminescence (PL) is an attractive silicon characterization technique because it is contactless and provides information on bulk impurities, defects, surface states, optical properties, and doping concentration. It can provide high resolution spectra, generally with the sample at low temperature and room-temperature spectra. The photoluminescence properties of silicon at low temperature are reviewed and discussed in this study. In this paper, silicon bulk PL spectra are shown in multiple peak positions at low temperature. They correspond with various impurities such as In, Al, and Be, phonon interactions, for example, acoustical phonons and optical phonons, different exciton binding energies for boron and phosphorus, dislocation related PL emission peak lines, and oxygen related thermal donor PL emissions.

• Nuclear Engineering and Technology
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• v.50 no.5
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• pp.731-737
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• 2018

In this research paper, the thermal transport in thorium dioxide is investigated by using nonequilibrium molecular dynamics. The thermal conductivity of bulk thorium dioxide was measured to be 20.8 W/m-K, confirming reported values, and the phonon mean free path was estimated to be between 7 and 8.5 nm at 300 K. It was observed that the thermal conductivity of thorium dioxide shows a strong dependency on temperature; the highest thermal conductivity was estimated to be 77.3 W/m-K at 100 K, and the lowest thermal conductivity was estimated to be 4.3 W/m-K at 1200 K. In addition, by simulating thorium dioxide structures with different lengths at different temperatures, it was identified that short wavelength phonons dominate thermal transport in thorium dioxide at high temperatures, resulting in decreased intrinsic phonon mean free paths and minimal effect of boundary scattering while long wavelength phonons dominate the thermal transport in thorium dioxide at low temperatures.