• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.139-144
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• 2005

A rigorous research is underway in our team, for the design and development of high figure of merits (ZT= 1.5${\sim}$2.0) micro-thermoelectric coolers. This paper discusses the fabrication process that we are using for developing the $Sb_2Te_3-Bi_2Te_3$ micro-thermoelectric cooling modules. It describes how to obtain the mechanical properties of the thin film TEC elements and reports the results of an equation-based multiphysics modeling of the micro-TEC modules. In this study the thermoelectric thin films were deposited on Si substrates using co-sputtering method. The physical mechanical properties of the prepared films were measured by nanoindentation testing method while the thermal and electrical properties required for modeling were obtained from existing literature. A finite element model was developed using an equation-based multiphysics modeling by the commercial finite element code FEMLAB. The model was solved for different operating conditions. The temperature and the stress distributions in the P and N elements of the TEC as well as in the metal connector were obtained. The temperature distributions of the system obtained from simulation results showed good agreement with the analytical results existing in literature. In addition, it was found that the maximum stress in the system occurs at the bonding part of the TEC i.e. between the metal connectors and TE elements of the module.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.3 s.333
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• pp.9-16
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• 2005

The mobility in strained Si inversion layer on $Si_{1-x}Ge_x$ is calculated considering a quantum effect(subband energy and wavefunction) in inversion layer and relaxation time approximation. The quantum effect in inversion layer is obtained by using self-consistent calculation of $Schr\ddot{o}dinger$ and Poisson equations. For the relaxation time, intravalley and intervalley scatterings are considered. The result shows that the reason for the enhancement in mobility as Ge mole fraction increases is that the electron mobility in 2-폴드 valleys is about 3 times higher than that of 4-폴드 valleys and most electrons are located in 2-폴드 valleys as Ge mole fraction increases. Meanwhile, for the phonon-limited mobility the fitting to experimental data, Coulomb and surface roughness mobilities are included in total mobility, Deformation potentials are selected for the calculated effective field, temperature, and Ge mole fraction dependent mobilities to be fitted to experimental data, and then upgraded data can be obtained by considering nonparabolicity in Si band structure.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.123-129
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• 1996

LDD structure is widely accepted in fabricating short channel MOSFETs due to reduced short channel effect originated form lower drain edge electric field. However, modeling of the LDD device is troublesome because the analysis methods of LDD region known are either too complicated or inaccurate. To solve the problem, this paper presents a nonlinear resistance model for the LDD region based on teh fact that the electron mobility changes with positive gate bias because accumulation layer of electrons is formed at the surface of the LDD region. To prove the usefulness of the model, single source/drain and LDD nMOSFETs were fabricated with 0.35$\mu$m CMOS technolgoy. For the fabricated devices we have measured I$_{ds}$-V$_{gs}$ characteristics and compare them to the modeling resutls. First of all, we calculated channel and LDD region mobility from I$_{ds}$-V$_{gs}$ characteristics of 1050$\AA$ sidewall, 5$\mu$m channel length LDD NMOSFET. Then we MOSFET and found good agreement with experiments. Next, we use calculated channel and LDD region mobility to model I$_{ds}$-V$_{gs}$ characteristics of LDD mMOSFET with 1400 and 1750$\AA$ sidewall and 5$\mu$m channel length and obtained good agreement with experiment. The single source/drain device characteristic modeling results indicates that the cahnnel mobility obtained form our model in LDD device is accurate. In the meantime, we found that the LDD region mobility is governed by phonon and surface roughness scattering from electric field dependence of the mobility. The proposed model is useful in device and circuit simulation because it can model LDD device successfully even though it is mathematically simple.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.451-454
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• 2000

The impact ionization(I.I.) is necessary to analyze carrier transport properties under the influence of high electric field. The full band I-k relation and Fermi's golden rule are used for the calculation of impact ionization rate. We have investigated the temperature- and field-dependent impact ionization coefficient for silicon using full band Monte Carlo simulation. The impact ionization coefficients calculated by our impact ionization model are agreed with experimental data at look. We know that impact ionization coefficients and electron energies are decreasing along increasing temperature due to increase of phonon scattering, especially by emission. The logarithm of impact ionization coefficients are fitted to linear function for temperature and field. The residuals of linear function are within the error bound of 5%. We know logarithmic impact ionization coefficients are linearly dependent on temperature and field.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.460-464
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• 2000

As device dimensions are lastly scaled down, impact ionization(I.I.) events are very important to analyze hot carrier transport in high energy region, and the exact model of impact ionization is demanded on device simulation. We calculate full band model by empirical pseudopotential method and the impact ionization rate is derived from modified Keldysh formula. We calculate impact ionization coefficients by full band Monte Carlo simulator to investigate temperature-and field-dependent characteristics of impact ionization for GaAs. Resultly impact ionization coefficients are In good agreement with experimental values at 300k. We know energy is increasing along increasing the field. while energy is decreasing along increasing the temperature since the phonon scattering rates for omission mode are very high at high temperature. The logarithmic fitting function of impact ionization coefficients is described as a second orders function for temperature and field. The residuals of the logarithmic fitting function are mostly within 5%. We know, therefore, logarithm of impact ionization coefficients has quadratic dependence on temperature and field, and we can save time of calculating the temperature- and field-dependent impact ionization coefficients.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.179-182
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• 2004

The $p-CdIn_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the Photoluminescence spectra of the as-grown $CdIn_2Te_4$ crystal and the various heat-treated crystals, the $(D^{o},X)$ emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_2Te_4:Cd$, while the $(A^{o},X)$ emission completely disappeared in the $CdIn_2Te_4:Cd$. However, the $(A^{o},X)$ emission in the photoluminescence spectrum of the $CdIn_2Te_4:Te$ was the dominant intensity like an as-grown $p-CdIn_2Te_4$ crystal. These results indicated that the $(D^{o},X)$ is associated with $V_{Te}$ acted as donor and that the $(A^{o},X)$ emission is related to $V_{Cd}$ acted as acceptor, respectively. The $p-CdIn_2Te_4$ crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of $(D^{o},\;A^{o})$ emission and its TO Phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and accepters such as $V_{Cd}$ or $Te_{int}$. Also, the In in the $CdIn_2Te_4$ was confirmed not to form the native defects because it existed in the stable form of bonds.

• Journal of the Korean Ceramic Society
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• v.47 no.1
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• pp.54-60
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• 2010

This paper shortly reviews our recent work on filled skutterudites, which are considered to be one of the most promising thermoelectric (TE) materials due to their excellent power factors and relatively low thermal conductivities. The filled skutterudite system also provides a platform for studying void filling physics/chemistry in compounds with intrinsic lattice voids. By using ab initio calculations and thermodynamic analysis, our group has made progresses in understanding the filling fraction limit (FFL) for single fillers in $CoSb_3$, and ultra-high FFLs in a few alkali-metal-filled $CoSb_3$ have been predicted and then been confirmed experimentally. FFLs in multiple-element-filled $CoSb_3$ are also investigated and anonymous filling behavior is found in a few specific systems. The calculated and measured FFLs, in both single and multiple-filled $CoSb_3$ systems, show good accordance so far. The thermal transport properties can be understood qualitatively by a phonon resonance scattering model, and it seems that a scaling rule may exist between the lattice thermal resistivity and the resonance frequency of filler atoms in filled system. Even though a few things become clear now, there are still many unsolved issues that call for further work.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.60-60
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• 1999

단결정 다이아몬드의 열전도도는 약 22W/cm.K로 열전도도가 가장 큰 물질로 알려져 있으며, 비저항은 10$\Omega$.cm 이상의 높은 값을 갖는다. 대부분 열전도도가 큰 것으로 알려진 물질들은 Cu, Ag 등과 같이 전자의 흐름에 의하여 열이 전도되기 때문에 큰 전기전도도를 함께 갖는 것일 일반적이다, 그러나, 다이아몬드는 빠른 phonon의 이동에 의하여 열전도가 이루어지므로 전기적으로 절연 특성을 갖으면서도 큰 열전도가 가능하다. 단결정 다이아몬드는 고방열 절연체로서 이상적인 물질 특성을 보여준다. 전기절연성을 갖는 열전도층으로 다이아몬드를 이용하기 위해서는 저가로 제조가 용이한 화학기상증착법을 이용하여야 한다. 화학기상증착법으로 제조된 다결정 다이아몬드 박막의 열전도도는 약 21W/cm.K로 여전히 매우 높은 값을 갖는 것으로 알려져 있지만, 비저항 값은 인위적으로 도핑을 전혀 하지 않은 상태에서도 106$\Omega$.cm 정도의 낮은 값을 갖는다. 전혀 도핑을 하지 않았음에도 전도성을 갖는 특이한 특성을 다결정 다이아몬드가 보여 주고 있으므로 이에 대한 연구는 주로 전기 전도성을 갖는 특이한 특성을 다결정 다이아몬드가 보여주고 있으므로 이에 대한 연구는 주로 전기전도성의 원인을 규명하는데 집중되고 있다. 아직 명확한 전도 기구는 제안되고 있지 못하지만 전도성의 원인은 수소와 관련이 있고 전도는 표면을 통하여 이루어진다는 것이다. 산(acid)을 이용하여 다결정 다이아몬드 박막을 세척하면 전기 전도성이 사라지고 높은 저항값을 갖는 박막을 얻게 되는데 박막을 세척하는 공정은 박막의 표면만을 변호시키므로 표면에 있던 전기전도층이 용액 처리를 통하여 제거되므로 전도성이 사라진다고 생각하는 것이다. 그러나, 본 연구에서는 두께가 두꺼울수록 저항값이 증가하는 것이 관찰되었고 기존의 측정방식인 수평적인 저항 측정법에 대하여 수직적 방향으로 저항을 측정하면 저항값이 1/2 정도 작게 측정되었다. 다결정 다이아몬드에서 표면을 통하여 전류가 흐른다면 박막의 두께에 따른 변화가 나타나지 않아야 하고 수직적인 전류 측정법이 오히려 더 큰 저항을 보여주어야 한다. 기존의 표면 전도 모델로는 설명되지 못하는 현상들이 관찰되었고 정확한 전기 전도 경로를 확인하기 위하여 전해 도금법으로 금속들이 석출되는 모습을 관찰하였다. 이 방법을 통하여 다결정 다이아몬드에서 전류는 결정입계를 통하여 전도됨을 알 수 있었다. 온도에 따른 다결정 다이아몬드의 전기전도도 변화를 관찰하였고 이로부터 활성화 에너지 값을 구할 수 있었다. 다결정 다이아몬드의 전도도는 온도에 따라서 0.049eV와 0.979eV의 두 개의 활성화 에너지를 갖는 구간으로 나뉘어졌다. 이로부터 다결정 다이아몬드에는 활성화 에너지 값이 다른 두 종류의 defect level이 형성되는 것으로 추정할 수 있고 이 낮은 defect level에 의하여 전도성을 갖는 것으로 생각된다.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.29-36
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• 2007

The main objectives of this study are to investigate the micro-scale energy transfer mechanism for silicon wafer and to find an efficient way for fabrication of silicon wafer through-hole by using the femtosecond pulse laser ablation. In addition, the electron-phonon interactions during laser irradiation are discussed and the carrier number density and temperatures are estimated. In particular, the present study observes the shapes of silicon wafer through-hole with $100\;{\mu}m$ diameter and it also measures the heat-affected area and the ablation depths fur different laser fluences by using the optic microscope and the three-dimensional profile measurement technique. First, from numerical investigation, it is found that the nonequilibrium state exists between electrons and phonons during laser irradiation. From experimental results, it should be noted that the heat-affected area increases with laser fluence, and the optimal conditions for through-hole formation with minimum heat affected zone are finally obtained.

• Journal of the Korean Ceramic Society
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• v.45 no.12
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• pp.827-831
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• 2008

Spark plasma sintering (SPS) of AlN ceramics were carried out with ${Y_2}{O_3}$ as sintering additive at a sintering temperature $1,550{\sim}1,700^{\circ}C$. The effect of ${Y_2}{O_3}$ addition on sintering behavior and thermal conductivity of AlN ceramics was studied. ${Y_2}{O_3}$ added AlN showed higher densification rate than pure AlN noticeably, but the formation of yttrium aluminates phases by the solid-state reaction of ${Y_2}{O_3}$ and ${Al_2}{O_3}$ existed on AlN surface could delay the densification during the sintering process. The thermal conductivity of AlN specimens was promoted by the addition of ${Y_2}{O_3}$ up to 3 wt% in spite of the formation of YAG secondary phase in AlN grain boundaries because ${Y_2}{O_3}$ addition could reduced the oxygen contents in AlN lattice which is primary factor of thermal conductivity. However, the thermal conductivity rather decreased over 3 wt% addition because an immoderate formation of YAG phases in grain boundary could decrease thermal conductivity by a phonon scattering surpassing the contribution of ${Y_2}{O_3}$ addition.