Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)
- Volume 14 Issue 3
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- Pages.29-36
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- 2007
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- 1226-9360(pISSN)
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- 2287-7525(eISSN)
Femto-second Laser Ablation Process for Si Wafer Through-hole
펨토초 레이저 어블레이션을 이용한 Si 웨이퍼의 미세 관통 홀 가공
- Kim, Joo-Seok (Dept. of Mechanical Engineering, Ching-Ang University) ;
- Sim, Hyung-Sub (Dept. of Mechanical Engineering, Ching-Ang University) ;
- Lee, Seong-Hyuk (Dept. of Mechanical Engineering, Ching-Ang University) ;
- Shin, Young-Eui (Dept. of Mechanical Engineering, Ching-Ang University)
- Published : 2007.09.30
Abstract
The main objectives of this study are to investigate the micro-scale energy transfer mechanism for silicon wafer and to find an efficient way for fabrication of silicon wafer through-hole by using the femtosecond pulse laser ablation. In addition, the electron-phonon interactions during laser irradiation are discussed and the carrier number density and temperatures are estimated. In particular, the present study observes the shapes of silicon wafer through-hole with
본 논문에서는 펨토초 레이저를 사용하여 정밀하고 효과적인 레이저 어블레이션 작업이 가능한지를 확인하기위한 수치 해석 및 가공 작업을 수행하였다. 이를 위하여 Si 재료 내부의 에너지 전달 메커니즘에 대한 수치해석을 실시하였으며, Si 웨이퍼에 각각 다른 조건으로 적용된 레이저 플루언스 값으로