• Journal of Internet of Things and Convergence
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• v.9 no.3
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• pp.7-12
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• 2023

One of the most important characteristics of digital forensics is integrity. Integrity means that the data has not been tampered with. If evidence is collected during digital forensic and later tampered with, it cannot be used as evidence. With analog evidence, it's easy to see if it's been tampered with, for example, by taking a picture of it. However, the data on the storage media, or digital evidence, is invisible, so it is difficult to tell if it has been tampered with. Therefore, hash values are used to prove that the evidence data has not been tampered with during the process of collecting evidence and submitting it to the court. The hash value is collected from the stored data during the evidence collection phase. However, due to the internal behavior of NAND flash memory, the physical data shape may change over time from the acquisition phase. In this paper, we study the characteristics and techniques of flash memory that can cause the physical shape of flash memory to change even if no intentional data corruption is attempted.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.416-419
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• 2003

There is a growing need for a nonvolatile memory technology with faster speed than existing nonvolatile memories. We studied of phase-change according to temperature and voltage in chalcogenide thin film base on $Ge_2Sb_2Te_5$. Searching for Tg(Glass transition temperature) temperature controlled on hotplate with RT quenching. We measure I-V characteristic through out bottom electrode(ITO) and top electrode(Al) between $Ge_2Sb_2Te_5$. And compared with I-V characteristics after impress the variable stress.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.384-384
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• 2012

PRAM switching device by using current pulse modulation was investigated to verify its possibility for 3D architecture. In this work, two phase change materials connected in series having a different crystallization temperature are used. Its structural for different phase change material was evaluated by electrical resistance. We confirmed that Germanium-Antimony-Tellurium (GST) alloy and Germanium- Copper-Tellurium (GCT) alloy material were selected according to crystallization temperature, ${\sim}180^{\circ}C$ for switching and ${\sim}240^{\circ}C$ for memory devices, respectively. From this research, it is expected that phase change switching device could have advantages of process in terms of material similarity and structural simplification.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.24-27
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• 2003

We have been investigated phase-change with temperature and electric field in chalcogenide Ge$_2$Sb$_2$Te$\sub$5/ thin film. T$\sub$c/(crystallization temperature) is confirmed by measuring the resistance with the varying temperature on the hotplate. We have measured I-V characteristics with Ge$_2$Sb$_2$Te$\sub$5/ chalcogenide thin film. It is compared with I-V characteristics after impress the variable pulse. The pulse has variable height and duration.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.6
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• pp.57-62
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• 2022

Recently, fast storage media such as phage-change memory (PCM) emerge, and memory management policies for slow disk storage need to be revisited. In this paper, we propose a new page replacement policy that makes use of PCM as a swap device of virtual memory systems. The proposed policy aims at reducing write traffic to the swap device as well as reducing the number of page faults pursued by traditional page replacement policies. This is because a write operation in PCM is slow and PCM has limited write endurances. Specifically, the proposed policy focuses on the reduction of page faults when the memory load of the system is high, but it aims at reducing write traffic to storage when free memory space is sufficient. Simulation experiments with various memory reference traces show that the proposed policy reduces write traffic to PCM without performance degradations.

• Journal of the Korean Ceramic Society
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• v.44 no.1 s.296
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• pp.18-22
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• 2007

The phase transition behavior of $Ge_2Sb_2Te_5$ (GST) thin film, which is a candidate material of recording layer for phase change random access memory (PRAM), has been evaluated using an in-situ reflectance measurement method. The experimental data have been analyzed by using johnson-mehl-avrami-kolomogorov (JMAK) model. JMAK model can be used only in isothermal state. However, temperature changes with time during the operation of PRAM. To apply JMAK equation to PRAM simulation, it has been assumed that the temperature increases stepwise and isothermally. By using JMAK equation and assumption for the transient state, the phase transition behavior of GST thin film has been predicted under $3^{\circ}C/min$ heating rate in this study. The simulation result agrees well with the experimental results. Therefore, It can be concluded that JMAK equation can be used far the PRAM simulation model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.191-192
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• 2008

For phase transition method, good record sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, a retention time is very important part for phase-transition. In our past papers, we chose composition of $Ge_1Se_1Te_2$ material to use a Se factor which has good optical sensitivity than conventional Sb. Ge-Se-Te and Ag/$Ge_1Se_1Te_2$ samples are fabricated and irradiated with He-Ne laser and DPSS laser to investigate a reversible phase change by light. Because of Ag ions, the Ag layer inserted sample showed better performance than conventional one. We should note that this novel one showed another possibility for phase-change random access memory.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.4
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• pp.515-523
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• 2003

Shape memory is physical phenomenon which a platically metal is restored to its original shape by a solid state phase change by heating. TiNi alloy the most effective material in the shape memory alloy(SMA). To study(measure) recovery stress of intelligent composite. Ti50-Ni50 shape memory matrix with prestrain SMA fiber. When SMA fiber of the intelligent composite is heated over austenite starting temperature(As) by electric heating. a recovery stress are generated. The recovery stress of the intelligent composite was measured by strain gage or photoelastic experiment. Measuring method of recovery stress by photoelastic experiment was developed in this research. It was certified that photoelastic experiment was more effective and more precise than strain gage method in the measurement of recovery stress.

• Journal of the Korean Society for Heat Treatment
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• v.9 no.3
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• pp.187-197
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• 1996

In this study, the properties of coil spring made by Cu-Zn-Al and B added shape memory alloys are investigated. The measurement of recovery displacement and energy with increasing weight, and thermocycling properties have been studied using displacement measuring device. Transformation temperature and phase change by thermocycling have been also investigated by DSC and X-ray diffractometer. Grain size of the alloy is refined from 1.2mm to $400{\mu}m$ by 0.06wt% of B addition. The maximum recovery energy of the coil spring for B added alloy is larger than that of no B added alloy, it is because of grain refinement. And shape memory ability of the coil spring by thermocycling decrease with increasing thermocycling after thermocycle under load. The degradation of shape memory properties of coil spring by thermocycling is improved by B addition.

• IEMEK Journal of Embedded Systems and Applications
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• v.14 no.2
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• pp.79-86
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• 2019

For decades, in-memory data structures have been designed for DRAM-based main memory that provides symmetric read/write performances and has no limited write endurance. However, such data structures provide sub-optimal performance for NVM as it has different characteristics to DRAM. With this motivation, we rethink a conventional red-black tree in terms of its efficacy under NVM settings. The original red-black tree constantly rebalances sub-trees so as to export fast access time over dataset, but it inevitably increases the write traffic, adversely affecting the performance for NVM with a long write latency and limited endurance. To resolve this problem, we present a variant of the red-black tree called a hierarchical balanced binary search tree. The proposed structure maintains multiple keys in a single node so as to amortize the rebalancing cost. The performance study reveals that the proposed hierarchical binary search tree effectively reduces the write traffic by effectively reaping the high capacity of NVM.