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http://dx.doi.org/10.4313/TEEM.2003.4.5.024

The Study of Phase-change with Temperature and Electric field in Chalcogenide Thin Film  

Yang, Sung-Jun (Department of Electronic Materials Engineering, Kwangwoon University)
Shin, Kyung (Department of Electronic Materials Engineering, Kwangwoon University)
Park, Jung-Il (Department of Electronic Materials Engineering, Kwangwoon University)
Lee, Ki-Nam (Department of Electronic Materials Engineering, Kwangwoon University)
Chung, Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon University)
Publication Information
Transactions on Electrical and Electronic Materials / v.4, no.5, 2003 , pp. 24-27 More about this Journal
Abstract
We have been investigated phase-change with temperature and electric field in chalcogenide Ge$_2$Sb$_2$Te$\sub$5/ thin film. T$\sub$c/(crystallization temperature) is confirmed by measuring the resistance with the varying temperature on the hotplate. We have measured I-V characteristics with Ge$_2$Sb$_2$Te$\sub$5/ chalcogenide thin film. It is compared with I-V characteristics after impress the variable pulse. The pulse has variable height and duration.
Keywords
Phase-change; Nonvolatile; Ge$_2$Sb$_2$Te$_{}$ 5/; C-RAM; Chalcogenide memory;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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