Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Optical properties of Ag/$Ge_1Se_1Te_2$ material with secondary Ag layer adoption

두 번째 Ag 층을 적용한 Ag/$Ge_1Se_1Te_2$ 물질의 광학적 특성 연구

  • Kim, Hyun-Koo (Department of Electronic Materials Engineering, Kwangwoon Univ.) ;
  • Han, Song-Lee (Department of Electronic Materials Engineering, Kwangwoon Univ.) ;
  • Kim, Jae-Hoon (Department of Electronic Materials Engineering, Kwangwoon Univ.) ;
  • Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwangwoon Univ.) ;
  • Chung, Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon Univ.)
  • 김현구 (광운대학교 전자정보공과대학 전자재료공학과) ;
  • 한송이 (광운대학교 전자정보공과대학 전자재료공학과) ;
  • 김재훈 (광운대학교 전자정보공과대학 전자재료공학과) ;
  • 구상모 (광운대학교 전자정보공과대학 전자재료공학과) ;
  • 정홍배 (광운대학교 전자정보공과대학 전자재료공학과)
  • Published : 2008.06.19
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Abstract

For phase transition method, good record sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, a retention time is very important part for phase-transition. In our past papers, we chose composition of $Ge_1Se_1Te_2$ material to use a Se factor which has good optical sensitivity than conventional Sb. Ge-Se-Te and Ag/$Ge_1Se_1Te_2$ samples are fabricated and irradiated with He-Ne laser and DPSS laser to investigate a reversible phase change by light. Because of Ag ions, the Ag layer inserted sample showed better performance than conventional one. We should note that this novel one showed another possibility for phase-change random access memory.

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