• Structural Engineering and Mechanics
• /
• 제68권5호
• /
• pp.519-526
• /
• 2018

In this article, experimental training of the commercial available shape memory alloy fibre (SMA) fibre under the combined thermomechanical loading is reported. SMA has the ability to sense a small change in temperature (${\geq}10^{\circ}C$) and activated under the external loading and results in shape change. The thermomechanical characteristics of SMA at different temperature and mechanical loading are obtained through an own lab-scale experimental setup. The analysis is conducted for two types of the medium using the liquid nitrogen (cold cycle) and the hot water (heat cycle). The experimental data indicate that SMA act as a normal wire for Martensite phase and activated behavior i.e., regain the original shape during the Austenite phase only. To improve the confidence of such kind of behavior has been verified by inspecting the composition of the wire. The study reveals interesting conclusion i.e., while SMA deviates from the equiatomic structure or consist of foreign materials (carbon and oxygen) except nickel and titanium may affect the phase transformation temperature which shifted the activation phase temperature. Also, the grain structure distortion of SMA wire has been examined via the scanning electron microscope after the thermomechanical cycle loading and discussed in details.

• 대한전자공학회논문지SD
• /
• 제44권1호
• /
• pp.45-50
• /
• 2007

본 논문에서는 상변환 메모리 (phase-change random access memory: PRAM)의 저전력 선택적 데이터 쓰기(selective data write: SDW) 기법을 제안하였다. PRAM은 쓰기 동작 과정에서 큰 전류를 오랜 시간동안 소모하기 때문에 큰 쓰기 전력을 소모한다. 이 쓰기 전력을 줄이기 위하여, SDW 기법은 쓰기 동작 과정에서 PRAM 셀에 데이터를 쓰기 전에 우선 저장될 셀의 데이터를 읽어온다. 셀의 기존 데이터와 새롭게 저장할 데이터를 비교하여, 입력된 데이터와 저장된 데이터가 다른 경우에만 PRAM 셀에 데이터 쓰기를 수행한다. 제안된 쓰기 기법을 사용하여 전력 소모를 반 이상으로 줄일 수 있다. 1Kbits ($128{\times}8bits$) PRAM 테스트 칩을 $0.5{\mu}m$ GST 셀과 $0.8{\mu}m$ CMOS 공정을 사용하여 구현하였다.

• 정보과학회 논문지
• /
• 제42권9호
• /
• pp.1071-1077
• /
• 2015

본 논문은 PCM을 가상메모리 스왑 장치로 사용하는 시스템을 위한 새로운 페이지 교체 기법을 제안한다. 제안하는 기법은 메모리 내의 각 페이지에 대한 수정 정도를 고려해서 교체 대상 페이지를 선정하며 이를 통해 PCM에 발생시키는 쓰기량을 줄인다. 즉, 제안하는 기법은 페이지의 수정 정도를 서브페이지 단위로 관리하고 최근에 사용되지 않은 페이지 중 수정된 서브페이지의 수가 최소인 페이지를 교체한다. 트레이스를 이용한 재현 실험을 통해 제안한 기법이 기존 CLOCK 알고리즘 대비 평균 22.9% 최대 73.7%의 PCM 쓰기량을 절감함을 확인하였다. 또한 PCM의 수명과 에너지 소모율을 각각 평균 49.0%와 3.0% 개선함을 보였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.657-657
• /
• 2013

In-situ observations of nano-scale behavior of nanomaterials are very important to understand onthe nano-scale phenomena associated with phase change, atomic movement, electrical or optical properties, and even reactions which take place in gas or liquid phases. We have developed on the in-situ experimental technologies of nano-materials (nano-cluster, nanowire, carbon nanotube, and graphene, et al.) and their interactions (percolation of metal nanoclusters, inter-diffusion, metal contacts and phase changes in nanowire devices, formation of solid nano-pores, melting behavior of isolated nano-metal in a nano-cup, et al.) by nano-discovery membrane platform [1-4]. Between two microelectrodes on a silicon nitride membrane platform, electrical percolations of metal nano-clusters are observed with nano-structures of deposited clusters. Their in-situ monitoring can make percolation devices of different conductance, nanoclusters based memory devices, and surface plasmonic enhancement devices, et al. As basic evidence on the phase change memory, phase change behaviors of nanowire devices are observed at a nano-scale.

• 열처리공학회지
• /
• 제5권3호
• /
• pp.179-185
• /
• 1992

The shape memory effect results from the martensite transfomation of each individual grain. Thus it is necessary to study the texture and its variation. In this study the change of texture during thermal cycling and it's effect on shape memory ability are investigated. The major component of the rolling texture in the parent phase is identified (001) [110], and minor components are (112) [110], (111) [112], {hkl}<100> fiber texture is developed at $45^{\circ}$ from rolling direction. In the case of martensite phase, it is estimated that the major component is (011) [100] and the minor components are (105) [501], (010) [101] and (100) [001]. According to thermal cycling. severity of texture, especially (001) [110] component in parent phase and (011) [100] component in martensite phase are increased. The shape memory ability is increased with increase of thermal cycles and also increased as the direction of specimen approach to $45^{\circ}$ from rolling direction. After first thermal cycling the temperature of transformation can be define clearly and Ms and As are raised by thermal cycling.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.108-109
• /
• 2012

This talk will begin with the demonstration of facile synthesis of silicon nanostructures using the magnesiothermic reduction on silica nanostructures prepared via self-assembly, which will be followed by the characterization results of their performance for energy storage. This talk will also report the fabrication and characterization of highly porous, stretchable, and conductive polymer nanocomposites embedded with carbon nanotubes (CNTs) for application in flexible lithium-ion batteries. It will be presented that the porous CNT-embedded PDMS nanocomposites are capable of good electrochemical performance with mechanical flexibility, suggesting these nanocomposites could be outstanding anode candidates for use in flexible lithium-ion batteries. Directed self-assembly (DSA) of block copolymers (BCPs) can generate uniform and periodic patterns within guiding templates, and has been one of the promising nanofabrication methodologies for resolving the resolution limit of optical lithography. BCP self-assembly processing is scalable and of low cost, and is well-suited for integration with existing semiconductor manufacturing techniques. This talk will introduce recent research results (of my research group) on the self-assembly of Si-containing block copolymers for the achievement of sub-10 nm resolution, fast pattern generation, transfer-printing capability onto nonplanar substrates, and device applications for nonvolatile memories. An extraordinarily facile nanofabrication approach that enables sub-10 nm resolutions through the synergic combination of nanotransfer printing (nTP) and DSA of block copolymers is also introduced. This simple printing method can be applied on oxides, metals, polymers, and non-planar substrates without pretreatments. This talk will also report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by the self-assembly of Si-containing BCPs. This approach offers a practical pathway to fabricate high-density resistive memory devices without using high-cost lithography and pattern-transfer processes. Finally, this talk will present a novel approach that can relieve the power consumption issue of phase-change memories by incorporating a thin $SiO_x$ layer formed by BCP self-assembly, which locally blocks the contact between a heater electrode and a phase-change material and reduces the phase-change volume. The writing current decreases by 5 times (corresponding to a power reduction of 1/20) as the occupying area fraction of $SiO_x$ nanostructures varies.

• Corrosion Science and Technology
• /
• 제22권1호
• /
• pp.64-72
• /
• 2023

Ni-Ti shape memory alloy for dental nerve treatment devices was prepared by adding Mo to Ni-Ti alloy to improve flexibility and fatigue fracture characteristics and simultaneously increase corrosion resistance. Surface properties of the alloy were evaluated. Microstructure analysis of the Ni-Ti-xMo alloy revealed that the amount of needle-like structure increased with increasing Mo content. The shape of the precipitate showed a pattern in which a long needle-like structure gradually disappeared and changed into a small spherical shape. As a result of XRD analysis of the Ni-Ti-xMo alloy, R-phase structure appeared as Mo was added. R-phase and B2 structure were mainly observed. As a result of DSC analysis, phase transformation of the Ti-Ni-Mo alloy showed a two-step phase change of B2-R-B19' transformation with two exothermic peaks and one endothermic peak. As Mo content increased, R-phase formation temperature gradually decreased. As a result of measuring surface hardness of the Ti-Ni-Mo alloy, change in hardness value due to the phase change tended to decrease with increasing Mo content. As a result of the corrosion test, the corrosion potential and pitting potential increased while the current density tended to decrease with increasing Mo content.

• Transactions on Electrical and Electronic Materials
• /
• 제9권6호
• /
• pp.223-226
• /
• 2008

$Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were processed bye-beam evaporator systems and RF-sputtering systems. Phase change characteristics were analyzed by measuring glassification temperature, crystallization temperature and density of bulk material. The thermal characteristics were measured at the temperature between 300 K and 700 K, and the electrical characteristics were studied within the range from 0 V to 3 V. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.69-69
• /
• 2009

In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sh-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sh-doped Ge-Se-Te thin films.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.57-57
• /
• 2010

In this study, nano-sized phase change materials were evaluated using nanoimprint lithography and c-AFM technique. The 200nm in diameter phase change nano-pillar device of GeSbTe, AgInSbTe, InSe, GeTe, GeSb were successfully fabricated using nanoimprint lithography. And the electrical properties of the phase change nano-pillar device were evaluated using c-AFM with pulse generator and voltage source.