• 한국전기전자재료학회논문지
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• 제19권10호
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• pp.918-922
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• 2006

Chalcogenide Phase change memory has the high performance necessary for next-generation memory, because it is a nonvolatile memory with high programming speed, low programming voltage, high sensing margin, low power consumption and long cycle duration. To minimize the power consumption and the program voltage, the new composition material which shows the better phase-change properties than conventional $Ge_2Sb_2Te_5$ device has to be needed by accurate material engineering. In the present work, we investigate the basic thermal and the electrical properties due to phase-change compared with chalcogenide-based new composition $Ge_1Se_1Te_2$ material thin film and convetional $Ge_2Sb_2Te_5$ PRAM thin film. The fabricated new composition $Ge_1Se_1Te_2$ thin film exhibited a successful switching between an amorphous and a crystalline phase by applying a 950 ns -6.2 V set pulse and a 90 ns -8.2 V reset pulse. It is expected that the new composition $Ge_1Se_1Te_2$ material thin film device will be possible to applicable to overcome the Set/Reset problem for the nonvolatile memory device element of PRAM instead of conventional $Ge_2Sb_2Te_5$ device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.15-16
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• 2005

Chalcogenide phase change memory has high performance to be next generation memory, because it is a nonvolatile memory processing high programming speed, low programming voltage, high sensing margin, low consumption and long cycle duration. We have developed a new material of PRAM with $Ge_1Se_1Te_2$. This material has been propose to solve the high energy consumption and high programming current. We have investigated the phase transition behaviors in function of various process factor including contact size, cell size, and annealing time. As a result, we have observed that programming voltage and writing current of $Ge_1Se_1Te_2$ are more improved than $Ge_2Sb_2Te_5$ material.

• 한국태양에너지학회 논문집
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• 제32권6호
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• pp.127-133
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• 2012

This paper is an experimental study on the freezing protection valve used for solar water heating, air-conditioning systems, and plumbing systems. When the phase change occurs from liquid to solid, most of the substances except water volumetrically shrink. And referred to as PCM(Phase Change Material) a substance with such properties, the phase change temperature varies depending on the material. To prevent the freezing of the plumbing system, such as air-conditioning system in the winter season, we developed a several types of freezing protection valve using PCM whose freezing temperature are $2-4^{\circ}C$. The working principle of the freezing protection valve is that the fluid inside the pipe is released to prevent the system-collapse when fluid temperature reaches the freezing temperature of the PCM. And then the valve is closed and returned to the original position automatically when the temperature of the operating fluid rises. In this paper, the operating temperatures, discharge flow rate and the response characteristics of the valve during the operation are tested and investigated. From the results of this research the freezing protection valves employing PCM are expected to be commercialized in the near future.

• 한국태양에너지학회 논문집
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• 제33권3호
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• pp.9-16
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• 2013

In this research, the effect of a heating system, which is powered by direct solar energy accumulated in phase change material (PCM) as heat storage material installed on the floor surface, on the cooling load was studied. Cooling load of a test building designed for this research was measured with fan coil unit and factors affecting it were also estimated. Experiments were performed with and without PCM installed on the building floor to understand the effect of the PCM on the cooling load. Additionally, to confirm the experiments results, the prediction calculation formula by average outside temperature and integrated solar radiation was composed using multivariate regression model. The results suggested that the heating system with PCM on the floor surface has the potential to shift electric power peak by radiating heat, stored during the daytime in it, at night, not increasing the total cooling load much.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.203-204
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• 2005

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with composition were investigated for PRAM. The 100-nm thick GeTe and $Sb_2Te_3$ films were deposited on $SiO_2$/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).

• 설비공학논문집
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• 제25권9호
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• pp.477-483
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• 2013

A numerical analysis of solid-liquid phase change was performed on a heat transfer module which consisted of circulating water path (BRINE), heat transfer plate (HTP) and phase change material (PCM) layers, such as high temperature PCM (HPCM, $78{\sim}79^{\circ}C$) and low temperature PCM (LPCM, $28{\sim}29^{\circ}C$). There were five arrangements, consisting of BRINE, HTP, LPCM and HPCM layers in the heat transfer module. The time and heat transfer rate for melting/solidification was compared to their arrangements, against each other. As results, the numerical time without convection was longer than the experimental one for melting/solidification. Moreover, the melting/solidification with the BRINE I-LPCM-BRINE II-HPCM arrangement was faster(10 hours) than the others; HPCM-BRINE-LPCM, BRINE I-HPCM-LPCM-BRINE II one.

• Current Optics and Photonics
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• 제7권3호
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• pp.254-262
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• 2023

Novel thermo-optically focus-switchable Fresnel zone plates based on phase-change metafilms are designed and analyzed at a visible wavelength (660 nm). By virtue of the large thermo-optic response of vanadium dioxide (VO₂) thin film, a phase-change material, four different plasmonic phase-change absorbers are numerically designed as actively tunable Gires-Tournois Al-VO₂ metafilms in two and three dimensions. The designed phase-change metafilm unit cells are used as the building blocks of actively focus-switchable Fresnel zone plates with strong focus switching contrast (40%, 83%) and high numerical apertures (1.52, 1.70). The Fresnel zone plates designed in two and three dimensions work as cylindrical and spherical lenses in reflection type, respectively. The coupling between the thermo-optic effect of VO₂ and localized plasmonic resonances in the Al nanostructures offer a large degree of freedom in design and high-contrast focus-switching performance based on largely tunable absorption resonances. The proposed method may have great potential in photothermal and electrothermal active optical devices for nonlinear optics, microscopy, 3D scanning, optical trapping, and holographic displays over a wide spectral range including the visible and infrared regimes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.191-192
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• 2008

For phase transition method, good record sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, a retention time is very important part for phase-transition. In our past papers, we chose composition of $Ge_1Se_1Te_2$ material to use a Se factor which has good optical sensitivity than conventional Sb. Ge-Se-Te and Ag/$Ge_1Se_1Te_2$ samples are fabricated and irradiated with He-Ne laser and DPSS laser to investigate a reversible phase change by light. Because of Ag ions, the Ag layer inserted sample showed better performance than conventional one. We should note that this novel one showed another possibility for phase-change random access memory.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.222.2-222.2
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• 2015

A $Ge_2Sb_2Te_5$ nanowire (GST NW) phase change memory device is investigated with Joule heating electrodes. GST is the most promising phase change materials, thus has been studied for decades but atomic structure transition in the phase-change area of single crystalline phase-change material has not been clearly investigated. We fabricated a phase change memory (PCM) device consisting of GST NWs connected with WN electrodes. The GST NW has switching performance with the reset/set resistance ratio above $10^3$. We directly observed the changes in atomic structure between the ordered hexagonal close packed (HCP) structure and disordered amorphous phase of a reset-stop GST NW with cross-sectional STEM analysis. Amorphous areas are detected at the center of NW and side areas adjacent to heating electrodes. Direct imaging of phase change area verified the atomic structure transition from the migration and disordering of Ge and Sb atoms. Even with the repeated phase transitions, periodic arrangement of Te atoms is not significantly changed, thus acting as a template for recrystallization. This result provides a novel understanding on the phase-change mechanism in single crystalline phase-change materials.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.1-10
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• 2008

The present status of technical development of a highly scalable, high-speed non-volatile PCM is overviewed. Major technical challenges are described along with solutions that are being pursued in terms of innovative device structures and fabrication technologies, new phase change materials, and new memory schemes.