• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.215-222
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• 2022

Artificial neuromorphic devices are considered the key component in realizing energy-efficient and brain-inspired computing systems. For the artificial neuromorphic devices, various material candidates and device architectures have been reported, including two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskite materials. In addition to conventional electrical neuromorphic devices, optoelectronic neuromorphic devices, which operate under a light stimulus, have received significant interest due to their potential advantages such as low power consumption, parallel processing, and high bandwidth. This article reviews the recent progress in optoelectronic neuromorphic devices using various active materials such as two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskites

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.537-546
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• 2023

Intrinsically stretchable light-emitting diodes, composed of stretchable electrodes, charge transport layers, and luminescent materials, have garnered significant interest for enhancing human well-being and advancing the field of deformable electronics. Various luminescent materials, such as perovskites and organics, have been integrated with stretchable elastomers to function as the stretchable emissive layers in these intrinsically stretchable LEDs. Stretchable conductors including Ag nanowire based percolating structures and conducting polymers have been utilized as stretchable transparent electrode. Despite this progress, their performances in terms of efficiency and stability remain challenging compared to their structurally stretchable and rigid LED counterparts. This review offers a comprehensive overview of recent advancements in intrinsically stretchable LEDs, focusing on material innovations.

• Journal of the Korean Magnetics Society
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• v.22 no.2
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• pp.37-41
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• 2012

The Ag nanoparticles attached $La_{0.7}Sr_{0.3}Co_{0.3}Fe_{0.7}O_{3-{\delta}}$ (LSCF) perovskites were prepared by plasma method. The Ag nanoparticles with size of several nanometers deposited from the Ag target were coated on the surface of LSCF powders with size range from 0.2 to 3 ${\mu}m$. The agglomeration of Ag particles annealed at $800^{\circ}C$ under inert gas of Ar were rarely observed. The inter-diffusion between surface Ag and core LSCF is effectively strong to prevent aggregation of Ag nanoparticles. The wave number of FT-IR spectra for LSCF were largely shifted as the concentration of Ag on LSCF up to 2.11 wt.%. The ionic states of irons in LSCF were measured by M$\ddot{o}$ssbauer spectroscopy. The small amount of $Fe^{4+}$ ions are converted to $Fe^{3+}$ ions after Ag nanopartcles were coated on LSCF.

• Korean Journal of Materials Research
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• v.2 no.4
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• pp.248-256
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• 1992

This paper has reviewed some of the basic principles that underlie the field of defect chemistry in simple ATi$O_3$(A=Ca, Sr, Ba) perovskites. Frenkel defects in perovskite structure is very much unlikely, and Schottky defects and intrinsic electronic defects in undoped materials are negligibly small compared with background acceptor impurities. The electrical properties of perovskite ceramics are dependent on the aliovalent impurities. Since perovskite structure is a ternary system, the stoiohiometry between cations as well as cation-anion ratio will affect defect structure and electrical properties. BaTi$O_3$and SrTi$O_3$show a limited deviation from the cation stoichiometry while CaTi$O_3$has significant excess CaO and Ti$O_2$solubility.

• Bulletin of the Korean Chemical Society
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• v.27 no.6
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• pp.853-856
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• 2006

Dion-Jacobson phases $CsCa_2Nb_2FeO_9$ and $CsCa_2Nb_2AlO_9$ were reinvestigated by the Rietveld analysis of powder X-ray diffraction (XRD) method, scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDS). These nominal compounds, previously known as the oxygen-deficient layered perovskites with the sequences of $NbO_6-MO_4-NbO_6$ in tripled slab, in fact, were mixed phases of n = 3 Dion-Jacobson phases and impurities such as $Ca_2NbFeO_6$ and $Ca_3Al_2O_6$. The difference of morphology and chemical in-homogeneity between Dion-Jacobson phases and impurities could be clearly identified by scanning electron microscopy with energy-dispersive X-ray spectroscopy. The chemical composition of $CsCa_2Nb_2FeO_9$ was calculated into $Cs_{0.59}Ca_{2.64}Nb_{2.92}Fe_{0.81}$ in small agglomerate crystals and $Cs_{0.95}Ca_{1.97}Nb_{3.08}Fe_{0.15}$ in long plate-like crystals.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.1265-1268
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• 2005

In this study, the synthesis and semiconducting properties of cation and defect-doped $KTaO_3$ film is reported. $KTaO_3$ is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. While numerous studies have investigated the thin-film growth of semiconducting perovskites, little is reported about semiconducting $KTaO_3$ thin films. In this work, the films were grown on (001) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the $KTaO_3$ lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting $KTaO_3:Ca$ films was as low as 10cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were $0.27cm^2/Vs$ and $3.21018cm^{-3}$, respectively. Crystallinity and microstructure of the $KTaO_3:Ca$ films were examined using X-ray diffraction and field-emission scanning microscopy.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.83-89
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• 1998

The structure refinements and the electrical and magnetoelectric measurements were performed for BIT.1BF and BIT.2BT. The tetragonal distortion of the ab plane became lessened with the addition of $4BiFeO_3 into Bi_4Ti_3O_{12}$ significantly. However, the tilting of the outer-oxygen octahedra of the perovskite unit and the elongatin of the $(Bi_2O_2)^{2+}$ layers became more pronounced. For the both phases, the bariations of dielectric properties and electrical conductivities at high temperatures showed that the ferroelectic I-rerroelectric II phase transition existed before reaching the Curie temperature. The electrical conductivity became higher with the increase of $Fe^{3+}$ ions, implying that the electron transfer increased correspondingly. The magnetoelectric effect was observed linear up to ~8 kOe, which was stronger in BIT.1BF than BIT.2BF. This behavior indicates that the distortion of the ab plane may affect the induced polarization as well as magnetic moment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.2
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• pp.117-121
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• 2018

Perovskite solar cells have received increasing attention in recent years because of their outstanding power conversion efficiency (exceeding 22%). However, they typically contain toxic Pb, which is a limiting factor for industrialization. We focused on preparing Pb-free perovskite films of Ag-Bi-I trivalent compounds. Perovskite thin films with improved optical properties were obtained by applying an anti-solvent (toluene) washing technique during the spin coating of perovskites. In addition, the surface condition of the perovskite film was optimized using a multi-step thermal annealing treatment. Using the optimized process parameters, $AgBi_2I_7$ perovskite films with good absorption and improved planar surface topography (root mean square roughness decreased from 80 to 26 nm) were obtained. This study is expected to open up new possibilities for the development of high performance $AgBi_2I_7$ perovskite solar cells for applications in Pb-free energy conversion devices.

• Journal of the Korean Ceramic Society
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• v.43 no.3 s.286
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• pp.162-168
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• 2006

The perovskites with nominal compositions $La_{0.8}Sr_{0.2}Fe_{1-x}M_xO_3$ (M=Co, Mn, Ni, x=0.1-0.3) were fabricated by a solid-state reaction method as cathode materials of low-temperature operating Solid Oxide Fuel Cells (SOFCs). X-ray diffraction analysis and microstructure observation for the sintered samples were performed. The ac complex impedance were measured in the temperature range $600-900^{\circ}C$ in air and fitted with a Solatron ZView program. The electrical conductivity and polarization resistance of $La_{0.8}Sr_{0.2}Fe_{1-x}M_xO_3$ (M=Co, Mn, Ni, x=0.1-0.3) were characterized systematically. The porosities of the sintered samples were in the range of 25% to 38%. The polarization resistance of $La_{0.8}Sr_{0.2}Fe_{0.7}M_{0.3}O_3$ was $0.291{\Omega}cm^2\;at\;700^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.214-214
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• 2010

The 0.65Pb($Mg_{1/3}Nb_{2/3})O_3-0.35PbTiO_3$ (PMN-PT) thin films with $La_{0.5}Sr_{0.5}CoO_{3-\delta}$ (LSCO) bottom electrodes were grown on $CeO_2$/YSZ/Si(001), Pt/$TiO_2$/Si and $SrTiO_3$ (STO) substrates using conventional pulsed laser deposition (PLD) at a substrate temperature of $550^{\circ}C$. Since generally the crystallographic orientation of the bottom electrode induces the orientation of the films deposited on it, it allows us to observe the influence of the PMN-PT film orientation on the electrical properties. Phi scan done on PMN-PT/LSCO thin films shows epitaxial behavior of the films grown on sto substrates and $CeO_2$/YSZ buffered Si(001) substrates, and (110) texture on Pt/$TiO_2$/Si substrates. Polarization-electricfield (P-E) measurement shows good hysteresis behavior of PMN-PT films with remnant polarization of 18.2, 8.8, and $4.4{\mu}C/cm^2$ on $CeO_2$/YSZ/Si, Pt/TiO2/Si and STO substrates respectively.