• 제목/요약/키워드: Pd thin film

검색결과 85건 처리시간 0.025초

금속 전극 알루미나 박막 캐패시터의 전기적 특성에 미치는 미세구조의 영향 (Effect of Microstructure on Electrical Properties of Thin Film Alumina Capacitor with Metal Electrode)

  • 정명선;주병권;오영제;이전국
    • 한국재료학회지
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    • 제21권6호
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    • pp.309-313
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    • 2011
  • The power capacitors used as vehicle inverters must have a small size, high capacitance, high voltage, fast response and wide operating temperature. Our thin film capacitor was fabricated by alumina layers as a dielectric material and a metal electrode instead of a liquid electrolyte in an aluminum electrolytic capacitor. We analyzed the micro structures and the electrical properties of the thin film capacitors fabricated by nano-channel alumina and metal electrodes. The metal electrode was filled into the alumina nano-channel by electroless nickel plating with polyethylene glycol and a palladium catalyst. The spherical metals were formed inside the alumina nano pores. The breakdown voltage and leakage current increased by the chemical reaction of the alumina layer and $PdCl_2$ solution. The thickness of the electroless plated nickel layer was 300 nm. We observed the nano pores in the interface between the alumina layer and the metal electrode. The alumina capacitors with nickel electrodes had a capacitance density of 100 $nF/cm^2$, dielectric loss of 0.01, breakdown voltage of 0.7MV/cm and leakage current of $10^4{\mu}A$.

접착방지막과 접착막을 동시에 적용한 대면적 Au/Pd 트랜스퍼 프린팅 공정 개발 (Development of the Large-area Au/Pd Transfer-printing Process Applying Both the Anti-Adhesion and Adhesion Layers)

  • 차남구
    • 한국재료학회지
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    • 제19권8호
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    • pp.437-442
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    • 2009
  • This paper describes an improved strategy for controlling the adhesion force using both the antiadhesion and adhesion layers for a successful large-area transfer process. An MPTMS (3-mercaptopropyltrimethoxysilane) monolayer as an adhesion layer for Au/Pd thin films was deposited on Si substrates by vapor self assembly monolayer (VSAM) method. Contact angle, surface energy, film thickness, friction force, and roughness were considered for finding the optimized conditions. The sputtered Au/Pd ($\sim$17 nm) layer on the PDMS stamp without the anti-adhesion layer showed poor transfer results due to the high adhesion between sputtered Au/Pd and PDMS. In order to reduce the adhesion between Au/Pd and PDMS, an anti-adhesion monolayer was coated on the PDMS stamp using FOTS (perfluorooctyltrichlorosilane) after $O_2$ plasma treatment. The transfer process with the anti-adhesion layer gave good transfer results over a large area (20 mm $\times$ 20 mm) without pattern loss or distortion. To investigate the applied pressure effect, the PDMS stamp was sandwiched after 90$^{\circ}$ rotation on the MPTMS-coated patterned Si substrate with 1-${\mu}m$ depth. The sputtered Au/Pd was transferred onto the contact area, making square metal patterns on the top of the patterned Si structures. Applying low pressure helped to remove voids and to make conformal contact; however, high pressure yielded irregular transfer results due to PDMS stamp deformation. One of key parameters to success of this transfer process is the controllability of the adhesion force between the stamp and the target substrate. This technique offers high reliability during the transfer process, which suggests a potential building method for future functional structures.

Magnetic Circular Dichroism Study of co Thin Films on Pd(111) Surface

  • Kim, Wookje;Kim, Wondong;Kim, Hyunjo;Kim, Jae-Young;Hoon Kho;Park, J.H.;Oh, S.J.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.169-169
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    • 1999
  • We studied magnetic properties of co thin films deposited on Pd (111) surface, which attracted much attention recently due to the perpendicular magnetic anisotropy, using magnetic circular dichroism(MCD). Special attention was paid on the effect of Pd capping and interface roughness on the direction of magnetic easy axis, and for that purpose MCD signals for all Co thicknesses were measured with two different ways : in-plane and out-of-plane geometry. In case of bare Co films deposited on smooth Pd(111) surface, no MCD signal was observed under 4$\AA$ co thickness. At 4$\AA$ Co thickness, MCD signal at the out-of-plane geometry was observed, and for thicker Co films, only in-plane MCD signal was measured. This type of magnetic easy axis transition has been reported for other cases like Co/Pt system. The effect of 5$\AA$ Pd capping on these bare Co films made an remarkable change on the transition of magnetic easy axis. Out-of-plane MCD signals exists up to 20$\AA$ Co thickness, and disappears at 24$\AA$ Co thickness. In-plane MCD signals first appears at 10$\AA$ Co thickness and gradually increases up to 24$\AA$ Co thickness. Between 10$\AA$ and 20$\AA$ Co thickness, in-plane and out-of-plane MCD signal coexist. The formation of multi-domain structure or the existence of tilted magnetic easy axis is an possible scenario for such an interesting coexistence. The effect of interface roughness was also tested by measuring MCD signal on Co films deposited on un-annealed Pd(111) surface. Out-of-plane MCD signal was observed up to 8$\AA$ Co thickness and the anisotropy of MCD signal at 4$\AA$ Co thickness was very large with respect to that of Co film deposited on the smooth substrate. Above 8$\AA$ thickness, there exists only in-plane MCD signal. From above results, it was concluded that both Pd capping and interface roughness induce and reenforce the perpendicular magnetic anisotropy. The large perpendicular magnetic anisotropy of Co/Pd multilayer system made by sputtering method can be well understood from our results.

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팔라듐 합금 수소 분리막의 전처리에 관한 연구 (A Study on the Surface Pre-treatment of Palladium Alloy Hydrogen Membrane)

  • 박동건;김형주;김효진;김동원
    • 한국표면공학회지
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    • 제45권6호
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    • pp.248-256
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    • 2012
  • A Pd-based hydrogen membranes for hydrogen purification and separation need high hydrogen perm-selectivity. The surface roughness of the support is important to coat the pinholes free and thin-film membrane over it. Also, The pinholes drastically decreased the hydrogen perm-selectivity of the Pd-based composite membrane. In order to remove the pinholes, we introduced various surface pre-treatment such as alumina powder packing, nickel electro-plating and micro-polishing pre-treatment. Especially, the micro-polishing pretreatment was very effective in roughness leveling off the surface of the porous nickel support, and it almost completely plugged the pores. Fine Ni particles filled surface pinholes with could form open structure at the interface of Pd alloy coating and Ni support by their diffusion to the membrane and resintering. In this study, a $4{\mu}m$ surface pore-free Pd-Cu-Ni ternary alloy membrane on a porous nickel substrate was successfully prepared by micro-polishing, high temperature sputtering and Cu-reflow process. And $H_2$ permeation and $N_2$ leak tests showed that the Pd-Cu-Ni ternary alloy hydrogen membrane achieved both high permeability of $13.2ml{\cdot}cm^{-2}{\cdot}min^{-1}{\cdot}atm^{-1}$ permation flux and infinite selectivity.

유리 기판 위에서의 PZT 박막의 특성에 관한 연구 (Characteristics of PZT thin film on the g1ass substrate)

  • 주필연;정규원;박영;박기엽;송준태
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 하계학술대회 논문집 C
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    • pp.1477-1479
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    • 2000
  • The annealing treatments on rf magnetron sputtered PZT($Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$) thin films(4000${\AA}$) have been investigated for a structure of PZT/Pt/Ti/ITO coated glass. Crystallization properties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature and time. We were able to obtain a perovskite structure of PZT at 650$^{\circ}C$ and 10min. P-E curves of Pd/PZT/Pt capacitor demonstrate typical hysteresis loops. The measured values of $P_r$, $E_c$ were 15.8[${\mu}C/cm^2$], 95[kV/cm] respectively. Polarization value decrease about 10% after $10^9$ cycles.

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비정질 강자성체 CoSiB/Pd 다층박막의 두께에 따른 수직자기이방성 변화 (Thickness Dependence of Amorphous CoSiB/Pd Multilayer with Perpendicular Magnetic Anisotropy)

  • 임혜인
    • 한국자기학회지
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    • 제23권4호
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    • pp.122-125
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    • 2013
  • 비정질 합금인 CoSiB과 비자성체 Pd을 이용하여 CoSiB/Pd 다층박막을 제작하고, 그 자기적인 특성을 분석하였다. $[CoSiB\;t_{CoSiB}/Pd\;1.3nm]_5$ 다층박막을 $t_{CoSiB}$ = 0.1~0.6 nm의 범위로 제작하였고, 동일한 방법으로 $[CoSiB\;0.3nm/Pd\;t_{Pd}]_5$ 다층박막을 $t_{Pd}$ = 1.0~1.6 nm의 범위로 제작하여 두께에 따른 자기이방성과 포화자화도를 측정하였다. CoSiB 두께가 증함에 따라 포화자화도가 증가하는 경향을 보였는데, 특히 CoSiB의 두께가 0.2~0.3 nm 일 때 포화자화도가 급격하게 증가하였다. 보자력은 두께 0.2 nm 에서 최대값을 보이다가 두께가 증가함에 따라 점차 감소하는 것을 확인하였다. Pd의 두께 변화 실험에서는 포화자화도는 1.1~1.2 nm 구간에서 약간 감소하다가 1.3 nm 이후 점차 증가하였으며, 보자력은 포화자화도에 비해 확연한 규칙성을 보이지 않았으나, 전체적으로 Pd의 두께가 증가함에 따라 값이 감소하는 것을 알 수 있었다.

고분자 박막 내에 담지 된 실리카 마이크로입자의 광산란 효과에 의한 광에너지 상향전환 효율 향상 (Light Scattering-enhanced Upconversion Efficiency in Silica Microparticles-embedded Polymeric Thin Film)

  • 최현석;이학래;이명수;박정민;김재혁
    • 공업화학
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    • 제30권1호
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    • pp.88-94
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    • 2019
  • 삼중항-삼중항 소멸에 의한 광에너지 상향전환 기술(triplet-triplet annihilation upconversion, TTA-UC)은 특정 조건을 만족시키는 유기물들의 에너지 전달 및 융합 과정에 의해 저에너지의 광자를 고에너지의 광자로 변환시키는 신개념 에너지 전환기술이다. 본 연구에서는 실리카 마이크로입자(silica microparticle, SM)를 UC가 구현되는 폴리우레탄 박막 내에 담지 시켜 입사되는 광원의 광산란 효과를 도모함으로써 TTA-UC 효율을 향상시키고, 그 기작에 대해 탐구하였다. Seeded growth method를 통하여 약 950 nm의 균일한 크기를 갖는 SM을 합성하였으며, UC 박막 내에 담지 된 SM의 농도를 증가시킴에 따라 635 nm 광원 조사 시 430-570 nm 영역에서의 UC 세기가 최대 1.64배 증가함을 확인하였다. 삼중항 lifetime 측정을 통하여 광감응제 PdTPBP와 전자수용체 perylene 간의 triplet-triplet energy transfer(TTET) 효율을 분석한 결과, 박막 내에 담지 된 SM이 chromophore 간의 TTET에 미치는 영향은 미미한 것으로 나타났다. 또한, 입사 강도-UC 세기의 상관관계를 분석하여 TTA-UC 효율을 분석한 결과, SM이 박막 내에 존재할 경우 UC 양자효율이 최대 1.5배 향상됨을 확인하였다.

황화납 양자점 감지막을 통해 감도가 개선된 수소센서 (Sensitivity enhancement of H2 gas sensor using PbS quantum dots)

  • 김세완;김나리;권진범;김재건;정동건;공성호;정대웅
    • 센서학회지
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    • 제29권6호
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    • pp.388-393
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    • 2020
  • In this study, a PbS quantum dots (QDs)-based H2 gas sensor with a Pd electrode was proposed. QDs have a size of several nanometers, and they can exhibit a high surface area when forming a thin film. In particular, the NH2 present in the ligand of PbS QDs and H2 gas are combined to form NH3+, subsequently the electrical characteristics of the QDs change. In addition to the resistance change owing to the reaction between Pd and H2 gas, the resistance change owing to the reaction between the NH2 of PbS QDs and H2 gas increases the current signal at the sensor output, which can produce a high output signal for the same concentration of H2 gas. Using the XRD and absorbance properties, the synthesis and particle size of the synthesized PbS QDs were analyzed. Using PbS QDs, the sensitivity was significantly improved by 44%. In addition, the proposed H2 gas sensor has high selectivity because it has low reactivity with heterogeneous gases such as C2H2, CO2, and CH4.

이종 전자재료 JO1NT 부위의 신뢰성에 관한 연구 (A Study on Reliability of Solder Joint in Different Electronic Materials)

  • 신영의;김경섭;김형호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1993년도 추계학술대회 논문집
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    • pp.49-54
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    • 1993
  • This paper discusses the reliability of solder joints of electronic devices on printed circuit board. Solder application is usually done by screen printing method for the bonding between outer leads of devices and thick film(Ag/Pd) pattern on Hybrid IC as wel1 as Cu lands on PCB. As result of thermal stresses generated at the solder joints due to the differences of thermal expansion coefficients between packge body and PCB, Micro cracking often occurs due to thermal fatigue failure at solder joints. The initiation and the propagate of solder joint crack depends on the environmental conditions, such as storage temperature and thermal cycling. The principal mechanisms of the cracking pheno- mana are the formation of kirkendal void caused by the differences in diffusion rate of materials, ant the thermal fatigue effect due to the differences of thermal expansion coefficient between package body and PCB. Finally, This paper experimentally shows a way to supress solder joints cracks by using low-${\alpha}$ PCB and the packages with thin lead frame, and investigates the phenomena of diffusion near the bonding interfaces.

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As$_{40}Ge_{10}Se_{100-x}S_x$ 계 박막의 광유기 스칼라 현상 (Photo-induced scalar phenomena of As$_{40}Ge_{10}Se_{100-x}S_x$ Thin-Film)

  • 박수호;이현용;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 추계학술대회 논문집
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    • pp.5-9
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    • 1996
  • As optical massmemories, (Se, S)-based chalcogenide amorphous films are used for a holographic supermicrofiche by using the refractive-index change. In 1000$\AA$thick-As$_{40}$ Ge$_{10}$Se$_{100-x}$S$_{x}$(x=0.25, 35at.%), the amount of refractive index change $\Delta$n reaches 0.01~0.53 at 6328, 7800$\AA$ by exposing for 15minutes plue-pass filtered mercury lamp(~4300$\AA$) and annealing 20$0^{\circ}C$. And in initially annealed As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$, photodarkening(PD) and thermalbleaching(TB) was founded.ded.B) was founded.d.

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