• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.2
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• pp.1579-1584
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• 2015

In photocatalytic reaction, the doping of metal matter can alter the titania surface properties. As such the metal matter can increase the rate of the reaction. The influence of metal doping and calcination condition of $TiO_2$ photocatalyst was investigated at the batch-type photoreactor. Several metal matters were doped to the $TiO_2$ catalyst to improve photodegradation efficiency. During the experiments, water content was 3wt%, and reactor temperature was $40^{\circ}C$. Palladium-doped $TiO_2$ was found to be the best, where as platinum or tungsten-added also showed good results. Additional doping of platinum or tungsten on Pd/$TiO_2$ had no increase on the removal efficiency. To obtain proper calcination condition, various experiments about calcination temperature and time were carried out. As a result, the optimum calcination condition was temperature of $400^{\circ}C$, time of 1 hour.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.283-288
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• 2014

PdO-doped $BaZr_{0.85}Y_{0.15}O_{3-\delta}$ (BZPY) proton conductors have been proposed as applicable for intermediate temperature electrolytes for protonic ceramic fuel cells (PCFCs) because the PdO doping is effective for improving the proton conductivity of $BaZr_{0.85}Y_{0.15}O_{3-\delta}$ (BZY) with high affinity for hydrogen. In order to further improve the conductivity of BZPY, two-phase composite electrolytes consisting of a BZPY and molten carbonate were designed. Dense BZPY-based composite electrolytes were fabricated after sintering at $670^{\circ}C$ for 4 h, since molten carbonates fill the grain boundary of the porous BZPY matrix. Furthermore, BZPY/$(Li-0.5Na)_2CO_3$ composites show a significantly enhanced protonic conductivity at intermediate temperatures. This may be because easy proton transport is possible through the interface of the carbonate and oxide phase.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.369-375
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• 1997

$V_{2}O_{5}/ThO_{2}/Pd$-doped $SnO_{2}$ sensor has a good selectivity and stability to CO at high sensor temperature of about $500^{\circ}C$, and shows rapid response. In particular, many kinds of interference gases, such as $NO_{x}$, $C_{3}H_{8}$, $CH_{4}$ and $SO_{2}$ have been found to give only a slight influence on the sensor selectivity to CO gas sensitivity by doped $V_{2}O_{5}$ (3.0 wt.%). For the sensor we used well-known thick film technological route with $V_{2}O_{5}$(3.0 wt.%), Pd(1.0 wt.%) and $ThO_{2}$(l.5 wt.%) as catalytic materials. In the case of mixed $NO_{x}$-CO gases, as combustion exhaust gas, only CO detection by $SnO_{2}$ type semiconductor sensor is generally very difficult because of $NO_{x}$ interference. The developed sensors can use to measure the exhausting gas of the automobile or the boiler for the Air-to-Fuel ratio control.

• Journal of Sensor Science and Technology
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• v.14 no.2
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• pp.63-68
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• 2005

The nano-grained Pd or Pt-doped $SnO_{2}$ thin films were deposited on the alumina substrate at ambient temperature or $300^{\circ}C$ by using an R.F. magnetron sputtering system and then annealed at $650^{\cir}C$ for 1 hour or 4 hours in air. The crystallinity and microstructure of the annealed films were analyzed. A grain size of the thin films was 30 nm to 50 nm. As a result of gas sensitivity measurements to an alcohol vapor of $36^{\circ}C$, the 2 wt.% Pt-doped $SnO_{2}$ thin-film sensor deposited at $300^{\circ}C$ and annealed at $650^{\circ}C$ for 4 hours showed the highest sensitivity.

• Journal of the Korean Institute of Gas
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• v.13 no.2
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• pp.23-29
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• 2009

This study investigated sensitivity of the gas sensor to chemical weapons with the sensor material doped with catalysts. The nano-sized SnO2 powder mixed with metal oxides (TiO2) was doped with transition metals(Pt, Pd and In). Thick film of nano-sized SnO2 powder with TiO2 was prepared by screen-printing method onto Al2O3 substrates with platinum electrode and chemical precipitation method. The physical and chemical properties of sensor material were investigated by SEM/EDS, XRD and BET analyzers. The measured sensitivity to simulant toxic gas is defined as the percentage of resistance of value equation, [(Ra-Rg)/$Ra\;{\times}100$)], that of the resistance(Ra) of SnO2 film in air and the resistance(Rg) of SnO2 film in acetonitrile gas. The best sensitivity and selectivity of these thick film were shown with 1wt.% Pd and 1wt.% TiO2 for acetonitile gas at the operating temperature of $250^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.23 no.3
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• pp.53-61
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• 1986

A gas sensor which has been made by wet process had fabricated by coating each of the mixture on alumina tube and firing at 85$0^{\circ}C$ for 3hrs. A gas concentration such $H_2$, CO, $C_3H_8$, $C_2H_2$ and $CH_4$ vs its detection voltage characteristics has been in-vestigated on $SnO_2-In_2O_3-MgO$ system doped with PdO, $La_2O_3$, $ThO_2$, NiO and $Nb_2O_5$ The optimum sensitivity composition for various gases were 90w/o $SnO_2$-9w/o $In_2O_3$-1w/o MgO for $H_2$, $C_2H_2$ CO and $C_3H_8$ and 95w/o $SnO_2$-4w/o $In_2O_3$-1w/o MgO for $CH_4$. The sample which has been made by wet process than dry process had predominated sensitivity for each gases and particle size of the sample coprecipitated with PH=9 was 0.1${\mu}{\textrm}{m}$ The $SnO_2$-In2_O_3-MgO$ system doped with 2w/o $Nb_2O_5$ and NiO was the most sensitive for $H_2$ and $C_2H_2$ gas. In $SnO_2$-In2_O_3-MgO$ system doped with $ThO_2$ the sensitivity of $H_2$ gas was decreased but CO gas was in-creased when dopant con was increased.

• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.1-6
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• 2005

In this study we investigate the electronic structure and magnetism of transition metal (TM = Ti, Cr, Mn, Fe, Co, Ni, Ru, Pd, Ag ) deped ZnO($TM_{0.25}Zn_{0.75}O$), which are expected to have Curie temperature. Full-potential Linearized Augmented Plane Wave(FLAPW) metod is adopted with exchange-correlation potential expressed as general gradient approximation(GGA). The calculated magnetic moments of ($TM_{0.25}Zn_{0.75}O$) are 0.83, 3.03, 4.03, 3.48, 2.47, 1.56, 0.43, 0.75, 0.01 ${\mu}_B$ for TM = Ti, Cr, Mn, Fe, Co, Ni, Ru, Pd, Ag, respectively. The nearest neighbor O atom to the transition metal is calculated to have a significant magnetic moment of about 0.1${\mu}_B$, ?? 새 strong hybridization between O-p and TM-d bands. As the results, the systems may have larger magnetic moments in total, compared to the corresponding isolated atoms. The 3d TM doped systems exhibit the half-metallic character except Co, wheres the 4d TM doped systems behave like normal metals and low spin polarization at the Fermi levels.

• Journal of information and communication convergence engineering
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• v.6 no.1
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• pp.38-42
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• 2008

Highly sensitive and mechanically stable gas sensors have been fabricated using the microfabrication and micromachining techniques. The sensing materials used to detect the offensive $CH_3SH$ and $(CH_3)_3N$ gases are 1 wt% Pd-doped $SnO_2$ and 6 wt% $Al_2O_3$-doped ZnO, respectively. The optimum operating temperatures of the devices are $250^{\circ}C$ and $350^{\circ}C$ for $CH_3SH$ and $(CH_3)_3N$, respectively and the corresponding heater power is, respectively, about 55mW and 85mW. Excellent thermal insulation is achieved by the use of a double-layer membrane: i.e. $0.2{\mu}m$-thick silicon nitride and $1.4{\mu}m$-thick phosphosilicate glass. The sensors are mechanically stable enough to endure the heat cycles between room temperature and $350^{\circ}C$, at least for 30 days.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.2
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• pp.315-322
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• 2002

A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric－pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.％ Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.

• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1073-1077
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• 2003

The Sn $O_2$-based gas sensors can detect inflammable and toxic gases of low concentration by the modulation of surface resistance, but they lack in selectivity on the whole. To give selectivity to the Sn $O_2$-based gas sensors, studies on the sensing mechanism, selective gas sensing materials and signal processing techniques are demanded. Ethanol (C$_2$ $H_{5}$OH) and acetonitrile ($CH_3$CN) were confirmed to undergo catalytic oxidation on Sn $O_2$ by gas chromatography. PdCl$_2$-doped Sn $O_2$ showed excellent sensitivity to ethanol and acetonitrile, while La$_2$ $O_3$-doped Sn $O_2$ showed excellent sensitivity to ethanol, but poor sensitivity to acetonitrile. Using these two sensors and pattern recognition, the selectivity to acetonitrile is greatly enhanced. The minimum detection level of acetonitrile was 15 ppm in air and 20 to 100 ppm when exposed to interfering gases together with acetonitrile.