• Korean Journal of Materials Research
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• v.31 no.9
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• pp.496-501
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• 2021

Metal halide perovskite nanocrystals, due to their high absorption coefficient, high diffusion length, and photoluminescence quantum yield, have received significant attention in the fields of optoelectronic applications such as highly efficient photovoltaic cells and narrow-line-width light emitting diodes. Their energy band structure can be controlled via chemical exchange of the halide anion or monovalent cations in the perovskite nanocrystals. Recently, it has been demonstrated that chemical exfoliation of the halide perovskite crystal structure can be achieved by addition of organic ligands such as n-octylamine during the synthetic process. In this study, we systematically investigated the quantum confinement effect of methylammonium lead bromide (CH₃NH₃PbBr₃, MAPbBr₃) nanocrystals by precise control of the crystal thickness via chemical exfoliation using n-octylammonium bromide (OABr). We found that the crystalline thickness consistently decreases with increasing amounts of OABr, which has a larger ionic radius than that of CH₃NH₃⁺ ions. In particular, a significant quantum confinement effect is observed when the amounts of OABr are higher than 60 %, which exhibited a blue-shifted PL emission (~ 100 nm) as well as an increase of energy bandgap (~ 1.53 eV).

• Korean Journal of Soil Science and Fertilizer
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• v.43 no.3
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• pp.275-282
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• 2010

The laboratory column experiments were used to transport of metal elements by infiltration-related dispersion and/or diffusion in mine tailing of the Guryong gold mine. The mine tailing shows the neutral pH (for a pore water) and contains quartz, chlorite, pyrite and calcite. Both a non-reactive solute ($Cl^-$ of 100 mg $L^{-1}$) and a reactive solute (1N HCl), were injected continuously through columns. The breakthrough curve in the non-reactive experiment reached at a maximum under 1.5 pore volumes (PV). The longitudinal dispersion (0.607 cm) and hydrodynamic dispersion coefficient ($1.96{\times}10^{-7}cm^{2}sec^{-1}$) were calculated by the slope. In the reactive experiment, the plateau curve was appeared in the pH values of 5.3, 4.5 and 1.7. The releases of metal elements such as Fe, Mn, Al, Cu, Zn, Pb, and Cd were observed to be related to the pH buffering. High concentrations of Mn, Cd and Zn were observed at the first pH plateau (4 PV and pH 5.3), whereas Fe, Cu, Al and Pb were released as the pH decreased to 4.0 or less. The resulting order of metals mobility, based on the effluent water, is Mn=Cd>Zn>Cu>Fe>Al>Pb.

• Korean Journal of Materials Research
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• v.12 no.1
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• pp.75-81
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• 2002

The ferroelectric properties of Pb(Zr,Ti)O$_3$[PZT] films degrade when the films with Pt top electrodes are annealed in hydrogen containing environment. This is due to the reduction activity of atomic hydrogen that is generated by the catalytic activity of the Pt top electrode. At the initial stage of hydrogen annealing, oxygen vacancies are formed by the reduction activity of hydrogen mainly at the vicinity of top Pt/PZT interface, resulting in a shift of P-E (polarization-electric field) hysteresis curve toward the negative electric field direction. As the hydrogen annealing time increases, oxygen vacancies are formed inside the PZT film by the inward diffusion of hydrogen ions, as a result, the polarization degrades significantly and the degree of P-E curve shift decreases gradually. The direction and the magnitude of the remnant polarization in the PZT film affect the motion of hydrogen ions which determines the degradation of polarization characteristics and the shift in the P-E hysteresis curve of the PZT capacitor during hydrogen annealing. When the remnant polarization is formed in the PZT film by applying a pre-poling voltage prior to hydrogen annealing, the direction of the P-E curve shift induced by hydrogen annealing is opposite to the polarity of the pre-poling voltage. The hydrogen-induced degradation behavior of the PZT capacitor is also affected by the internal field that has been generated in the PZT film by the charges located at the top interface prior to hydrogen annealing.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.307-313
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• 2005

Electromigration behavior in the Sn96.5Ag3.0Cu0.5 solder lines was investigated and compared Sn96.5Ag3.0Cu0.5 with eutectic SnPb. Measurements were made for relevant parameters for electromigration of the solder, such as drift velocity, threshold current density, activation energy, as well as the product of diffusivity and effective charge number (DZ$\ast$). The threshold current density were measured to be $2.38{\times}10^4A/cm^2$ at $140^{\circ}C$ and the value represented the maximum current density which the SnAgCu solder can carry without electromigration damage at the stressing temperatures. The electromigration energy was measured to 0.56 eV in the temperature range of $110-160^{\circ}C$. The measured products of diffusivity and the effective charge number, DZ$\ast$ were $3.12{\times}10^{-10} cm^2/s$ at $110^{\circ}C$, $4.66{\times}10^{-10} cm^2/s$ at $125^{\circ}C$, $8.76{\times}10^{-10} cm^2/s$ at $140^{\circ}C$, $2.14{\times}10^{-9}cm^2/s$ at $160^{\circ}C$ SnPb solder existed incubation stage, while SnAgCu did not have incubation stage. It was thought that the diffusion mechanism of SnAgCu was different from that of SnPb.

• Environmental Engineering Research
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• v.13 no.2
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• pp.79-84
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• 2008

Adsorption of heavy metals by sawdust was investigated to evaluate the effectiveness of using sawdust to remove heavy metals from aqueous solutions. Kinetic and isotherm studies were carried out by considering the effects of initial concentration and pH. The adsorption isotherms of heavy metals fitted the Langmuir or Freundlich model reasonably well. The adsorption capacity of metal was in the order $Pb^{2+}$ > $Cu^{2+}$ > $Zn^{2+}$. A high concentration of co-existing ions such as $Ca^{2+}$ and $Mg^{2+}$ depressed the adsorption of heavy metal. Adsorption data showed that metal adsorption on sawdust follows a pseudo-second-order reaction. Kinetic studies also indicated that both surface adsorption and intraparticle diffusion were involved in metal adsorption on sawdust. Column studies prove that sawdust could be effective biosorbent for the removal of heavy metals from aqueous phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.709-712
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• 2001

The effects of post annealing temperature by the Rapid Thermal Annealing(RTA) on the electrical properties of Pb(Zr,Ti)O$_3$(PZT) thin film were investigated. Analyses by the RTA treatments reveled that the leakage current of PZT thin films strongly depend on heating temperature and time. It was found that leakage current properties of PZT capacitor were changed by heating temperature during the RTA annealing. On Pt/Ti/Si substrates, PZT films are deposited at 350 $^{\circ}C$ by rf magnetron sputtering. The X-ray diffusion (XRD) was confirmed the formation of PZT thin film. Leakage current characteristics were improved with decreasing the post annealing temperature of PZT thin film. RTA annealed film on the 700$^{\circ}C$ shows ferroelectric and electrical properties with a remanent polarization of 12.4${\mu}$C/$\textrm{cm}^2$ coercive field of 117kV/cm, leakage current J= 6.2${\times}$10$\^$-6/ A/$\textrm{cm}^2$

• Proceedings of the KSME Conference
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• 2000.04b
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• pp.37-44
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• 2000

Numerical investigation is made to study the effects of natural convection on the formation of macrosegregation of a Pb-Sn alloy solidification process in a 2-D confined rectangle mold. The governing equations are calculated using previous continuum models with SIMPLE algorithm doring the solidification process. In addition. to track the solid-liquid interface with time variations. the moving boundary condition Is adopted and irregular interface shapes are treated with Boundary-Fitted Coordinate system. As the temperature reduce from the liquidus to the solidus, the liquid concentration of Sn. the lighter constituent, increases. Then the buoyancy-driven flow due to temperature and liquid composition gradients, called thermosolutal convection or double diffusion, occurs in the mushy region and forms the complicated macrosegregation maps. Related to this phnomena, effects on the macrosegregation formation depending on the cooling condition and gravity values are described.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.831-832
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• 2006

Solid-state processing via the bulk mechanical alloying enables us to directly fabricate $Mg_2X$ semi-conductive material performs. Precise control of chemical composition leads to investigation on the dilution and enrichment of X in $Mg_2X$. Two types of solid-state reactivity are introduced: e.g. synthesis of $Mg_2Si$ from elemental mixture Mg-Si is nucleation-controlled process while synthesis of $Mg_2Sn$ from Mg-Sn, diffusion-controlled process. Thermoelectricity of these $Mg_2X$ is evaluated for discussion on the validity and effectiveness of this new PM route as a reliable tool for fabrication of thermoelectric compounds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.311-314
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• 1999

Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO$_2$/Si substrate using PZT(10/90) and PZT(90/10) metal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structure without presence of the rosette structure. It can be assumed that the lower PZT layers a role of nucleation site or seeding layer for the formation of the upper PZT layer. Zr and Ti diffusion into the Pt electrode were mainly distributed at the surface of Pt electrode beneath the PZT/Pt interface. The PZT/Pt interfacial layer showed a microstructure characterized by a grain phase surrounded by a Pb-deficient pyrochlore matrix phase. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6, respectively.

• Korean Journal of Materials Research
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• v.4 no.2
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• pp.143-151
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• 1994

On PT/Ti/Si substrates, PZT thln fllms are deposited at $300^{\circ}C$ by rf magnetron sputtering uslng a $(PbZr_{52}, Ti_{48})O_{3}$ composltc cerarnlc target. To abtaln, the stable phase, perovskltc structure, furnace annealmg techmque had been cmplo:~d In PbO amb~ent for the $550^{\circ}C$-$750^{\circ}C$ temperature ranges. On Pt(250$\AA$)/Ti(500$\AA$)/Si, Pt(1000)$\AA$/Ti(500$\AA$)/Si substrates, effects of Ti layer and Pt thickness are studled. Though thickness of the Pt layer 1s 1000$\AA$). oxygen diffusion is not prevented and accelerated by Ti layer actlng for oxygen sink sites durmg furnace annealing. The upper TI layer 1s transformed Into TIOX by oxyen dlffuslon and lower Ti layer Into silicide with in-diffused Pt. The formation of TiOx layer seems to affect the orlentatton of the PZT layer. Furnace annealed f~lm shows ferroelectr~c and electrical properties wth a remanent polarlzation of 3.3$\mu A /\textrm{cm}^2$, , coerclve fleld of 0.15MV/cm, a=571 (10kHz), leakage current 32.65$\mu A /\textrm{cm}^2$, , breakdown voltage of 0.4OMV/cm.