1 |
N. Tanabe, T. Matsui, S. Saitoh, T. Takeuchi, S. Kobayashi, T. Nakajima, Y. Maejima, Y. Hayashi, K. Arnanuma, T. Hase, Y. Miyasaka and T. Kunia, 1995 Symp. VLSI Technology Digest of Technical Papers, 123 (1995)
|
2 |
R. Khamanker, J. Kim, B. Jiang, C. Sudharna, P. Maniar, R. Mozzami, R. Jones and J. Lee, Proc. 1994 Int. Electron Device Meet., 337 (1994)
|
3 |
P.D. Maniar, R. Mozzami, R.E. Jones, A.C. Campbell and C.J. Mogab, Mater. Res. Soc. Symp, Proc., 310, 151 (1993)
DOI
|
4 |
N. Ikarashi, Appl. Phys. Lett., 73,1955 (1998)
DOI
ScienceOn
|
5 |
E.G. Lee, D.J. Wouters, G. Willems and H.E. Maes, Arol. Phys. Lett., 69, 1223 (1996)
DOI
ScienceOn
|
6 |
D. Dimas, W.L. Warren, M.B. Sinclair, B.A. Tuttle and R.W. Schwartz, J. Appl. Phys., 76,4305 (1994)
DOI
ScienceOn
|
7 |
G.E. Pike, W.L. Warren, D. Dimas, B.A. Tuttle, R. Ramesh, J. Lee, V.G. Keramidas and J.T. Evans, Jr., Appl. Phys. Lett., 66, 484 (1995)
DOI
ScienceOn
|
8 |
H. Miki, K. Kushida-Abdelghafar, K. Torii and Y. Fujisaki, Jpn. J. Appl. Phys., 36, 1132 (1997)
DOI
|
9 |
G.A.C.M. Spierings, M.J.E. Ulenaers, G.L.M. Kampschoer, H.A.M. van Hal and P.K. Larsen, J. Appl, Phys., 70, 2290 (1991)
DOI
|
10 |
J.H. Joo, J.M. Sean, Y.C. Jean, K.Y. Qh, J.S. Roh and J. J. Kim, Appl. Phys. Lett., 70,3053 (1997)
DOI
ScienceOn
|