• 한국세라믹학회지
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• 제35권9호
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• pp.969-973
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• 1998

Pb(Zr, Ti)O3 (PZT) (Zr:Ti= 52: 48) thin films were prepared on MgO(100) substrates by dipping-py-rolysis process using metal naphthenates as starting materials. Thin films were fabricated by spin coating technique and the precursor films were prefired at 20$0^{\circ}C$ in air for 0.5, 1, 2, 3, and 24 h followed by final heat treatment at 75$0^{\circ}C$ for 30min. Film prefired for 24 h lost orientational properties and pole figure analysis showed the lost of the epitaxial relationship between the films and substrate while highly a/c-axis oriented thin films were obtained for the samples prefired for 1, 2, and 3h.

• 한국세라믹학회지
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• 제25권6호
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• pp.694-698
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• 1988

Pb(Zr, Ti)O3-Pb(Co, Nb)O3 systems were investigated by x-ray diffraction method. System contains rhombohedral, tetragonal, and pseudocubic structures at room temperature. Crystal symmetry was changed from 4-fold symmetry to 3-fold symmetry by substituting Pb(Co1/3, Nb2/3)O3 ; PCN, to Pb(Zr0.52, Ti0.48)O3 ; PZT. As the substituted PCN concentration was increased, an increase in a-axis direction and a decrease in c-axis in the perovskite structure were occurred simultaneously, so that the crystal symmetry was changed into such way. In the higher sinteringtemperatures, the unit cell distortions occurred rather in the lower substitution range of PCN. The ferroelectric properties were maximized at the region that tetragonal and rhombohedral or pseudocubic structures were coexist.

• The Korean Journal of Ceramics
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• 제4권3호
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• pp.199-203
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• 1998

$Pb(Zr, Ti)O_3$ (Pb:Zr:Ti=1:0.52:0.48) thin films were prepared on single crystal MgO(100) substrates by dipping-pyrolysis process using a solution of constituent metal naphthenates as starting materials. The solution was spin-coated onto substrate and the precursor films were pyrolyzed at $200^{\circ}C$ in air or at $200^{\circ}C$ in argon for 1, 2, 5 and 24h, followed by final heat treatment at $750^{\circ}C$. For all the films, highly (h00)/(00l)-oriented Pb$Pb(Zr, Ti)O_3$ thin films with smooth surfaces and crack-free were obtained, whereas thin film pyrolyzed in air for 24 h exhibited polycrystalline character. According to the pole-figure analysis, epitaxy of the product films was found to depend on pyrolysis atmosphere.

• 한국진공학회지
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• 제19권1호
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• pp.52-57
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• 2010

$BiFeO_3(BFO)/Pb(Zr_{0.52}Ti_{0.48})O_3$(PZT) bilayer와 multilayer의 다층구조를 만들어 전기적 특성을 측정하여 같은 두께의 BFO 단층박막과 비교해 보았다. BFO와 PZT 용액을 이용하였으며 chemical solution deposition 방법으로 Pt/Ti/$SiO_2$/Si(100) 기판위에 각 박막을 증착하였다. X-ray diffraction 분석을 통해 모든 박막이 다배향(multi-orientation) 페로브스카이트 (perovskite) 구조를 가졌음을 확인하였다. BFO/PZT Bilayer와 multilayer 박막들은 BFO 단층박막의 비해 누설전류 값이 500 kV/cm에서 약 4, 5차수 정도 감소했으며, 이로 인해 BFO/PZT 다층박막의 강유전체 특성이 크게 향상되었다. BFO/PZT multilayer 다층구조 박막의 경우 안정된 이력곡선(hysteresis loop)을 나타냈으며, 잔류 분극(remanent polarization)의 값은 $44.3{\mu}C/cm^2$이었으며, 항전계($2E_c$) 값은 681.4 kV/cm였다.

• 한국세라믹학회지
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• 제20권3호
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• pp.227-235
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• 1983

The dielectric and piezoelectic properties in which $(Zr_{0.52} Ti_{0.48})^{+4}$ ions of $Pb(Zr_{0.52} Ti_{0.48})O_3$ are partially substituted for $W^{+6}$ ions were studied. $ZrTiO_4$ was made by coprecipitation. The specimens of disc shape were sintered respectively at 1180$^{\circ}$to 130$0^{\circ}C$ at an intervals of 2$0^{\circ}C$ for 1 hour. The optimum sintering temperature were found to be between 126$0^{\circ}C$ and 128$0^{\circ}C$. PZT solid solutions sintered had the tetragonal structure with c/a=1.025$\pm$0.005 and theoretical densities incre-ased from 8.02 to 8.17g/cm3 with increasing the amount of the partial substitution of $(Zr_{0.52} Ti_{0.48})^{+4}$ ion for $W^{+6}$ ion The grain size and curie temperature decreased with increasing the amount of $WO_3$ while the dielectric constant increased. When $(Zr_{0.52} Ti_{0.48})^{+4}$ ion was substituted for 1 mole% of $W{+6 ]$ion the planar coupling coefficient$(K_P)$ was as high as 0.58 But as the amount of $WO_3$ increased the mechanical quality factor(Qm) decreased considerably.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.105-106
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• 2006

The ferroelectric materials of the PZT, SBT attracted much attention for application to ferroelectric random access memory (FRAM) devices. Through the last decade, the lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for the ferroelectric products due to its higher remanant polarization and the ability to withstand higher coercive fields. FRAM has been currently receiving increasing attention for one of future memory devices due to its ideal memory properties such as non-volatility, high charge storage, and faster switching operations. In this study, we first applied the damascene process using chemical mechanical polishing (CMP) to the fabricate the $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitor in order to solve the problems of plasma etching such as low etching profile and ion charging. The structural characteristics were compared with specimens before and after CMP process of PZT films. The scanning electron microscopy (SEM) analysis was performed to compare the morphology surface characteristics of $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ capacitors. The densification by the vertical sidewall patterning and charging-free ferroelectric capacitor could be obtained by the damascene process without remarkable difference of the characteristics.

• 한국세라믹학회지
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• 제42권7호
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• pp.516-520
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• 2005

Conditions for formation of perovskite Pb(Zr$_{0.52}$Ti$_{0.48}$)O$_{3}$ phase by the hydrothermal synthesis are investigated. Pb(Zr$_{0.52}$ Ti$_{0.48}$)O$_{3}$ ceramics were synthesized by hydrothermal process above 180$^{\circ}C$ for 2 h reaction using 5$\~$30 M KOH solution as a mineralizer. Particle size increases in proportion to the mineralizer concentration. As a result of EOX analysis, PZT powders synthesized using 50 M of KOH as a mineralizer were considered as 2.42 mol$\%$ K doped-PZT powders. And 2.42 mol$\%$ K doped-PZT has much higher mechanical quality factor than undoped PZT ceramics. The sintering properties showed 7.987 g/cm$^{3}$ of sintered density and 3$\~$4 $\mu$m of grain size.

• 한국세라믹학회지
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• 제37권4호
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• pp.395-401
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• 2000

In this study, we chose the basic composition which indicated the best electrical properties by change of x content(0, 0.05, 0.1, 0.15, 0.2, 0.25 mol respectively) in xPb(Mn1/3Sb2/3)O3-(1-x)Pb(Zr0.52Ti0.48)O3 ceramics. And we substituted Cd2+ for Pb2+ site, then observed the sintering behavior, microstructure and electrical propertties according to the various sintering temperature. The basic composition was the 0.05PMS-0.95PZt, and it showed single perovskite phase and excellent properties. In case of Cd2+ substitution, we were able to sinter at 90$0^{\circ}C$ which was lower than conventional sintering temperature(1200~130$0^{\circ}C$). Especially, when the 2mol% substituted PMS-PZT specimens were sintered at 90$0^{\circ}C$ for 2h, we obtained the p=7.6g/㎤, kp=56%, Qm=520 and made sure of a position of Cd2+ substitution by observing lattice parameter, phase transition temperature. From this results, we could infer that because Cd2+ substituted fro A-site, low temperature sintering of Cd2+ substituted PMS-PZT without any loss of electrical properties shows its applicability for the piezoelectric ceramic transformer.

• 한국전기전자재료학회논문지
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• 제17권11호
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• pp.1174-1177
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• 2004

The dielectric and piezoelectric properties of silver added 0.96 Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_3$-0.04 Pb(Mn,W,Sb,Nb)$_3$ ceramics were examined. By varying the contents of silver(0.0, 0.4, 1.0 mol%), the effect of silver addition on PZT-PMWSN ceramics was investigated at various sintering temperature(900, 1000, 1100 $^{\circ}C$). As increasing silver contents, the relative dielectric constant was increased and sinterability was enhanced. At the specimen with 0.4 mol% Ag and sintered at 1000 $^{\circ}C$, electromechanical coupling factor( $k_{p}$), mechanical quality factor( $Q_{m}$), dielectric constant($\varepsilon$$_{r}$) and dielectric loss were 0.502, 811, 991, 0.006, respectively. The results showed that the PZT-PMWSN/Ag composites have enhanced piezoelectic and dielectric properties and sintering temperature was lowered.red.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1022-1024
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• 1995

In this study, $Pb(Zr_xTi_{1-x})O_3$(x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol.%] of $Pb(Zr_xTi_{1-x})O_3$ was made and spin-coated on the Pt/$SiO_2$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at $400[^{\circ}C]$ for 10[min.]. Sintering temperature and time were $500{\sim}800[^{\circ}C]$ and $1{\sim}60$[min.]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin films were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of $700[^{\circ}C]$ for 1 hour. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.