• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권8호
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• pp.451-454
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• 2000

We have grown vertically aligned carbon nanotubes in a large area of Co-Ni codeposited Si substrates by the thermal CVD usign $C_2H_2$ gas. Since the discovery of carbon nanotubes, growth of carbon nanotubes has been achieved by several methods such as laser vaporization, arc discharge, and pyrolysis. In particular, growth of vertically aligned nanotubes is important to flat panel display applications. Recently, vertically aligned carbon nanotubes have been grown on glass by PECVD. Aligned carbon nanotubes can be also grown on mesoporous silica and Fe patterned porous silicon using CVD. In this paper, we demonstrate that carbon nanotubes can be vertically aligned on catalyzed Si substrate when the domain density of catalytic particles reaches a certain value. We suggest that steric hindrance between nanotubes at an initial stage of the growth forces nanotubes to align vertically and each nonotubes are grown in bundle.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권7호
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• pp.375-381
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• 2000

In this paper, we described the characterization of High-Tc Superconducting(HTS) microstrip antenna using non-radiating edge feeding technique and reported the microwave properties of HTS antennas with temperature. To do this, we prepared the $YBa_2Cu_3O_{7-x}$ superconducting thin film on MgO substrate using pulse-laser deposition techniques. The HTS microstrip antenna using non-radiating feeding technique was fabricated using chemical wet-etching. Then it was compared with identical antenna patterned with evaporated gold. The diverse measured results have been reported in terms of the input impedance, resonant frequency and return loss. In additional, at around the critical temperature, the effect of kinetic inductance which affect the resonant characteristic of the HTS microstrip antenna was reported.

• 한국전기전자재료학회논문지
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• 제15권2호
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• pp.110-118
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• 2002

Organic thin film transitors(OTFT) are of interest for use in broad area electronic applications. And recently organic electroluminescent devices(OELD) have been intensively investigated for using in full-color flat-panel display. We have fabricated inverted-staggered structure OTFTs at lower temperature using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active eletronic material and photoacryl as the organic gate insulator. The field effect mobility is 0.039∼0.17 ㎠/Vs, on-off current ratio is 10$\^$6/, and threshold voltage is -7V. And here we report the study of driving emitting, Ir(ppy)$_3$, phosphorescent OELD with all organic thin film transistor and investigated its electrical characteristics. The OELD with a structure of ITO/TPD/8% Ir(ooy)$_3$ doped in BCP/BCP/Alq$_3$/Li:Al/Al and OTFT with a structure of inverted-stagged Al(gate electrode)/photoacry(gate insulator)/pentacene(p-type organic semiconductor)/ Au(source-drain electrode) were fabricated on the ITP patterned glass substrate. The electrical characteristics are turn-on voltage of -10V, and maximum luminance of about 90 cd/㎡. Device characteristics were quite different with that of only OELD.

• 한국전기전자재료학회논문지
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• 제24권7호
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• pp.594-598
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• 2011

We have investigated the sensing properties of ethanol gas sensor with pure ZnO and Ga-doped ZnO nanowires on Au coated (0001) sapphire substrates grown by hot walled pulsed laser deposition. Randomly aligned ZnO nanowires arrays were grown on a Au-electrode patterned under ambient conditions. ZnO nanowires have various sizes and shapes with a different substrate position inside a furnace. The average of length and diameter of the ZnO nanowires were $8\;{\mu}m$ and 100 nm respectively, and confirmed by field emission scanning electron microscopy. Sensitivity chanege characterization of the gas sensor was found that measured sensitivities of the ethanol gas sensors were 83.3% and 68.3% at $300^{\circ}C$ respectively.

• Bulletin of the Korean Chemical Society
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• 제34권4호
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• pp.1035-1038
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• 2013

Rolling circle amplification (RCA) of DNA on an aligned-carbon nanotube (a-CNT) surface was electrically interfaced by the a-CNT based filed effect transistor (FET). Since the electric conductance of the a-CNT will be dependent upon its local electric environment, the electric conductance of the FET is expected to give a very distinctive signature of the surface reaction along with this isothermal DNA amplification of the RCA. The a-CNT was initially grown on the quartz wafer with the patterned catalyst by chemical vapor deposition and transferred onto a flexible substrate after the formation of electrodes. After immobilization of a primer DNA, the rolling circle amplification was induced on chip with the a-CNT based FET device. The electric conductance showed a quite rapid increase at the early stage of the surface reaction and then the rate of increase was attenuated to reach a saturated stage of conductance change. It took about an hour to get the conductance saturation from the start of the conductance change. Atomic force microscopy was used as a complementary tool to support the successful amplification of DNA on the device surface. We hope that our results contribute to the efforts in the realization of a reliable nanodevice-based measurement of biologically or clinically important molecules.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.503-504
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• 2006

This paper presents the design and fabrication of a LC voltage-controlled oscillator (VCO) using 1-poly 6-metal mixed signal CMOS process. To obtain the high-quality factor inductor in LC resonator, patterned-ground shields (PGS) is placed under the symmetric inductor to reduce the effect from image current of resistive Si substrate. Moreover, due to the incapability of using thick top metal layer of which the thickness is over $2{\mu}m$, as used in many RF CMOS process, the structure of dual-metal layer in which we make electrically short circuit between the top metal and the next metal below it by a great number of via materials along the metal traces is adopted. The circuit operated from 2.63 GHz to 3.09 GHz tuned by accumulation-mode MOS varactor. The corresponding tuning range was 460 MHz. The measured phase noise was -115 dBc/Hz @ 1MHz offset at 2.63 GHz carrier frequency and the current consumption and the corresponding power consumption were about 2.6 mA and 4.68 mW respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.270-270
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• 2008

We present details of experimental results in the fabrication of high density line patterns, using imprint technique that can provide a simple and comparatively cost-effective manufacturing means. Barrier array structures for display or interconnects for semiconductor applications were the aims of this study. For pattern fabrication, a polymer layer (Ajinomoto GX-13 dielectric film) with a thickness of 38um that can act as either an insulating or a dielectric layer was laminated on a substrate. Fine tracks were then formed using a patterned stamp under isostatic pressure. The line width was ranged between 10 to 60 mm. A self-assembled monolayer (SAM) of fluorinated alkylchlorosilane [$CF_3(CF_2)5(CH_2)2SiCl_3$] as an anti-sticking layer was coated on the surface of the stamp prior to thermal imprint to improve the de-molding characteristic.

• 반도체디스플레이기술학회지
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• 제9권4호
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• pp.25-29
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• 2010

We have investigated the effect of surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of AZO thin films, we have processed photo-lithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the AZO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the AZO thin films. Device structure was AZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer. The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.98-99
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• 2007

This study has successfully demonstrated the direct fabrication of polymer resistors using ink-jet printing technology as an alternative patterning to traditional photolithography. The polymer resistors were fabricated just by two layer processes using a ink-jet printer (DMP-2800, Fujifilm Dimatix). First, resistive materials was patterned by a ink-jet printing with the desired width and length. Next, resistor fabrication was completed by printing metal contact pads on the both sides of the polymer resistor. We used poly (3,4-ethylene dioxythiophene) poly(styrenesulfonate)(PEDOT:PSS) for the resistor material and a nano-sized silver colloid for the metal contact pads. We characterized the electrical properties of PEDOT:PSS by measuring sheet resistance and specific resistance on a glass substrate. From analysis of the measured resistances, the electrical resistances of the polymer resistors linearly increased as a function of printed width and length of resistors. The accuracy of the fabricated polymer resistor showed about $0.6{\sim}2.5%$ error for the same dimensions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.545-545
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• 2007

Recently, innovative process has been investigated in order to replace the conventional high-cost micro patterning processes on the electronic products. To produce desirable profit margins from this low cost products, printed circuit board(PCB), will require dramatic changes in the current manufacturing philosophies and processes. Innovative process using metal nano particles replaces the current industry standard of subtractive etched of copper as a highly efficient way to produce robust circuitry on low cost substrates. An advantage of using metal nano particles process in patterned conductive line manufacturing is that the process is additive. Material is only deposited in desired locations, thereby reducing the amount of chemical and material waste. Simply, it just draws on the substrate as glass epoxy or polyimide with metal nano particles. Particles, when their size becomes nano-meter scale, show some specific characteristics such as enhanced reactivity of surface atoms, decrease in melting point, high electric conductivity compared with the bulk. Melting temperature of metal gets low, the metal nano particles could be formated onto polymer substrates and sintered under $300^{\circ}C$, which would be applied in PCB. It can be getting the metal line of excellent electric conductivity.