• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.60-64
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• 2003

In this study, the inorganic thin-film passivation layer was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam evaporation system, the various kinds of inorganic thin-films were deposited onto the organic layer and their interface properties between organic and inorganic layer were investigated. In this investigation, the MgO layer showed the most suitable properties, and based on this result, the time dependent emission properties were estimated for the OLED with and without passivation layer. In this experiment, we can see that the time-dependent emission properties of MgO passivated OLED had longer life-time compared to non-passivated OLED. Therefore, we can consider that the MgO thin film is one of the most suitable candidates for the thin-film passivation layer of OLED.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.413-413
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• 2012

Lead sulfide (PbS) Colloidal quantum dots (CQDs) are promising material for the photovoltaic device due to its various outstanding properties such as tunable band-gap, solution processability, and infrared absorption. More importantly, PbS CQDs have large exciton Bohr radius of 20 nm due to the uniquely large dielectric constants that result in the strong quantum confinement. To exploit desirable properties in photovoltaic device, it is essential to fabricate a device exhibiting stable performance. Unfortunately, the performance of PbS NQDs based Schottky solar cell is considerably degraded according to the exposure in the air. The air-exposed degradation originates on the oxidation of interface between PbS NQDS layer and metal electrode. Therefore, it is necessary to enhance the stability of Schottky junction device by inserting a passivation layer. We investigate the effect of insertion of passivation layer on the performance of Schottky junction solar cells using PbS NQDs with band-gap of 1.3 eV. Schottky solar cell is the simple photovoltaic device with junction between semiconducting layer and metal electrode which a significant built-in-potential is established due to the workfunction difference between two materials. Although the device without passivation layer significantly degraded in several hours, considerable enhancement of stability can be obtained by inserting the very thin LiF layer (<1 nm) as a passivation layer. In this study, LiF layer is inserted between PbS NQDs layer and metal as an interface passivation layer. From the results, we can conclude that employment of very thin LiF layer is effective to enhance the stability of Schottky junction solar cells. We believe that this passivation layer is applicable not only to the PbS NQDs based solar cell, but also the various NQDs materials in order to enhance the stability of the device.

• Current Photovoltaic Research
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• v.5 no.2
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• pp.63-67
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• 2017

Aluminum oxide ($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surface. The quality of passivation layer is important for high-efficiency silicon solar cell. double-layer structures have many advantages over single-layer materials. $Al_2O_3/SiN_X$ passivation stacks have been widely adopted for high- efficiency silicon solar cells. The first layer, $Al_2O_3$, passivates the surface, while $SiN_X$ acts as a hydrogen source that saturates silicon dangling bonds during annealing treatment. We explored the properties on passivation film of $Al_2O_3/SiN_X$ stack layer with changing the conditions. For the post annealing temperature, it was found that $500^{\circ}C$ is the most suitable temperature to improvement surface passivation.

• Journal of the Semiconductor & Display Technology
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• v.19 no.1
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• pp.93-96
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• 2020

Polyimide thin film was prepared by annealing the polyamic acid that was synthesized through co-deposition of diamine and dianhydride. The polyamic acid and polyimide thin film were characterized with FT-IR and HR FE-SEM. The average roughness of the film surface, evaluated with AFM, were 0.385 nm and 0.299 nm after co-deposition, and annealing at 120 ℃ respectively. OLED was passivated with the polyimide layer of 200 nm thickness. While the inorganic passivation layer enhances the WVTR of OLED, the organic passivation layer gives flexibility to the OLED. The in-situ passivation of OLED with organic thin film layer provides the leading technique to develop flexible OLED Display.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.426-433
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• 2008

We first demonstrated simultaneous patterning and passivation of P3HT active layer with photosensitive PVA. The passivation layers were obtained by annealing the organic layers after developing PVA and subsequent over-etching the P3HT layer. The fabricated OTFTs were electrically characterized. The OTFTs exhibited the mobility of ${\sim}5.9{\times}10^{-4}\;cm^2/V{\cdot}s$ and on/off current ratio of ${\sim}10^4$. After passivation, the results showed the extended lifetime of ${\sim}250$ hours with photosensitive PVA layer.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.36-40
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• 2007

Inorganic layers, such as SiOxNy and SiOx deposited using plasma sublimation method, were tested as passivation layer for organic thin-film-transistors (OTFTs). OTFTs with bottom-gate and bottom-contact structure were fabricated using pentacene as organic semiconductor and an organic gate insulator. SiOxNy layer gave little change in characteristics of OTFTs, but SiOx layer degraded the performance of OTFTs severely. Inferior barrier properties related to its lower film density, higher water vapor transmission rate (WVTR) and damage due to process environment of oxygen of SiOx film could explain these results. Polyurea and polyvinyl acetates (PVA) were tested as organic passivation layers also. PVA showed good properties as a buffer layer to reduce the damage come from the vacuum deposition process of upper passivation layers. From these results, a multilayer structure with upper SiOxNy film and lower PVA film is expected to be a superior passivation layer for OTFTs.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.196-196
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• 2014

플라즈마 건식 식각 기술은 반도체 식각공정에서 효과적으로 이용되고 있으며, 반도체 소자의 크기가 줄어듬에 따라 미세하고 정확하게 식각 깊이를 제어할 수 있는 원자층 식각 기술이 개발되었다. 3-5족 반도체 소자의 Interface Passivation Layer 로 이용되는 $Al_2O_3$ 와 BeO 의 원자층 식각을 하였으며, 각각의 원자층 식각 조건과 식각 후의 표면 거칠기 변화에 대한 영향을 확인 할 수 있었다.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.161-168
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• 1996

For the improvement of microelectronic thin film interconnection materials, dielectric passivation effects on the electromigration phenomena were studied. Using Al-1%Si, various shaped patterns were fabricated and dielectric passivation layers of several structures were deposited on the $SiO_2$ layer. Lifetime of straight pattern showed 2~5 times longer than the other patterns that had various line width and area. It is believed that the flux divergence due to the structural inhomogeneity and so the current crowding effects shorten the lifetime of thin film interconnections. The lifetime of thin film interconnections seems to depend on both the passivation materials and the passivation thickness. PSG/$SiO_2$ dielectric passivation layers showed longer lifetime than $Si_3N_4$ dielectric passivation layers. This results from the PSG on $SiO_2$ layer reduces stress and from the improvement of resistance to the moisture and to the mobile ion such as sodium. This is also believed that the lifetime of thin film interconnections seems to depend on the passivation thickness in case of the same deposition materials.

• Journal of Information Display
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• v.10 no.2
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• pp.54-61
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• 2009

The results of the optimization of the organic passivation process for fabricating thin-film transistors (TFTs) with a high aperture ratio on a seventh-generation glass (2200${\times}$1870 mm) substrate for LCD-TV panels are reported herein. The optimization of the organic passivation process has been verified by checking various factors, including the material properties (e.g., thickness, stain, etching, thermal reflow) and the effects on the TFT operation (e.g., gate/data line delay and display-driving properties). The two main factors influencing the organic passivation process are the optimization of the final thickness of the organic passivation layer, and the gate electrode. In conclusion, the minimum possible final thickness was found to be $2.42{\um}m$ via simulation and pilot testing, using the full-factorial design. The optimization of the organic passivation layer was accomplished by improving its brightness by over 10 cd/$m^2$ (ca. 2% luminance) compared to that of the conventional organic passivation process. The results of this research also help reduce the reddish stain on display panels.

• Journal of the Korean institute of surface engineering
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• v.37 no.2
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• pp.110-118
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• 2004

The corrosion of pure titanium (CP- Ti Grade 2) and titanium alloy (Ti6Al4V ELI) were studied under various conditions of simulated body fluids. The static immersion test and the electrochemical test were performed in accordance with ISO 10271 : 2001. For the electrochemical test, the open circuit potential was monitored as a function of time, and the cyclic polarization curve was recorded. The corrosion resistance was evaluated from the values of corrosion potential, passivation current density, breakdown potential, and the shape of hysteresis etc. The effects of alloy type, surface condition, temperature, oxygen, and constituents in the fluids such as acid, chloride were estimated. Both specimens had extremely low dissolution rate in the static immersion test. They showed strong passivation characteristics in the electrochemical test. They maintained negligible current density throughout the wide anodic potential range. The passive layer was not broken up to 2.0 V (vs. SCE). The hysteresis and the shift of passivation potential toward the anodic direction was observed during the reversed scan. The passivation process appeared to be accelerated by oxygen in air or that dissolved in the fluids. The passivation also proceeded without oxygen by the reaction of constituents in the fluids. Acid or chloride in the fluids, specially later weakened the passive layer, and then induced higher passivation current density and less shift of passivation potential in the reversed scan. CP-Ti Grade 2 was more reactive than Ti6Al4V ELI in the fluids containing acid or chloride, but thicker layer produced on its surface provided higher corrosion resistance.