Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Passivation Layers for Organic Thin-film-transistors

  • Lee, Ho-Nyeon (Department of Display and Electronic Information Engineering, Soon Chun Hyang University) ;
  • Lee, Young-Gu (Display Device & Material Lab., Samsung Advanced Institute of Technology) ;
  • Ko, Ik-Hwan (Display Device & Material Lab., Samsung Advanced Institute of Technology) ;
  • Kang, Sung-Kee (Display Device & Material Lab., Samsung Advanced Institute of Technology) ;
  • Lee, Seong-Eui (Department of Advanced Materials Engineering, Korea Polytechnic University) ;
  • Oh, Tae-Sik (Division of Electronic Engineering, Sun Moon University)
  • Published : 2007.02.28
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Abstract

Inorganic layers, such as SiOxNy and SiOx deposited using plasma sublimation method, were tested as passivation layer for organic thin-film-transistors (OTFTs). OTFTs with bottom-gate and bottom-contact structure were fabricated using pentacene as organic semiconductor and an organic gate insulator. SiOxNy layer gave little change in characteristics of OTFTs, but SiOx layer degraded the performance of OTFTs severely. Inferior barrier properties related to its lower film density, higher water vapor transmission rate (WVTR) and damage due to process environment of oxygen of SiOx film could explain these results. Polyurea and polyvinyl acetates (PVA) were tested as organic passivation layers also. PVA showed good properties as a buffer layer to reduce the damage come from the vacuum deposition process of upper passivation layers. From these results, a multilayer structure with upper SiOxNy film and lower PVA film is expected to be a superior passivation layer for OTFTs.

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