• The Plant Pathology Journal
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• v.38 no.4
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• pp.261-271
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• 2022

Root-knot nematodes are the most important plant-parasitic nematodes worldwide. Many efforts have been made to find non-chemical, risk-free, and environmentally friendly methods for nematode control. In this study, the effects of compost and vermicompost of arugula (Eruca sativa) on Meloidogyne javanica were investigated in three glasshouse experiments. In addition, the expression of the defense-related genes nonexpressor of pathogenesis-related 1 (NPR1) and lipoxygenase 1 (LOX1) was detected in tomato plants treated with vermicompost of arugula at 0, 2, 7, and 14 days after nematode inoculation. The result showed that the vermicompost of arugula significantly reduced the reproduction factor of the nematode by 54.4% to 70.5% in the three experiments and increased the dry weight of shoots of infected tomato plants. Gene expression analysis showed that LOX1 expression increased on the second and seventh day after nematode inoculation, while NPR1 expression decreased. The vermicompost of arugula showed stronger nematode inhibitory potential than the vermicompost of animal manure. The vermicompost of arugula is superior to arugula compost in suppressing the activity of M. javaniva and reducing its impact. It manipulates the expression of resistance genes and could induce systemic resistance against root-knot nematodes.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.181-184
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• 1999

This paper presents the accurate deembeding method for pad and parasitics of MOSFET device. rad effects are deembedded using THRU LINE, which is much simpler method without laborious fitting procedure compared with conventional OPEN and SHORT pad modeling. Parasitic resistance extraction uses the algebraic relation between increments of inversion layer charge and oxide capacitance. It is especially adequate for insulating gate junction device. Extracted parasitics are verified through comparing modeled and measured S parameters.

• Transactions of the Society of Information Storage Systems
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• v.8 no.1
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• pp.16-21
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• 2012

SAW device is widely used as filters, sensors, actuators in various technologies. And capacitive sensor is tremendously used to measure pressure, gap, etc. The application of SAW device as signal conditioner of capacitive sensor reduces noise level and enables high precision measurement. The response increase of SAW based capacitive sensor is produced just before the two capacitive electrode contacts by the existence of parasitic resistance of capacitive electrode. In this paper, we analyze the effects of parasitic resistance and propose the calibrating method using lumped component and execute the high precision gap measurement using calibrated system. And xx nm resolution and yy ${\mu}m$ stroke was attained.

• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.347-349
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• 2013

This paper describes analysis and calculation of line frequency ripple current according to output capacitor value and effects of LED connection in the single stage flyback converter with high power factor. The low frequency output ripple current delivered from single stage converter has been analyzed in detail and the method evaluating parasitic resistance included in LED has been provided. In order to verify the equation derived in this paper, the single stage flyback converter has been designed with constant output current regulation with DCM operation. Experiments were conducted with different LED load structures to analyze the effect of LED parasitic resistance on output ripple current. As test results, the calculation can provide guide line to select capacitor values depending on output ripple current and LED characteristics.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.10
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• pp.2038-2040
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• 2009

This paper studies the state estimation problem for the current of DC/DC boost converters with parasitic inductor resistance. The parasitic resistance increases the system uncertainty when the output load variation occurs. In order to enhance the observation performance of the Luenberger observer this paper includes the integral of the estimation error signal to the estimation algorithm. By using the proposed PI observer the converter current signal is successfully reconstructed with the voltage measurement regardless of the load uncertainty. Computer simulation has been carried out by using Simulink/Sim Power System. Simulation results show the proposed method maintains robust estimation performance against the model uncertainty.

• Journal of Power Electronics
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• v.15 no.4
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• pp.1035-1046
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• 2015

This study presents a practical implementation of a multi-mode two-phase interleaved boost converter for fuel cell electric vehicle application. The main operating modes, which include two continuous conducting modes and four discontinuous conducting modes, are discussed. The boundaries and transitions among these modes are analyzed with consideration of the inductor parasitic resistance. The safe operational area is analyzed through a comparison of the different operating modes. The output voltage and power characteristics with open-loop or closed-loop operation are also discussed. Key performance parameters, including the DC voltage gain, input ripple current, output ripple voltage, and switch stresses, are presented and supported by simulation and experimental results.

• Parasites, Hosts and Diseases
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• v.59 no.3
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• pp.189-225
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• 2021

The use of albendazole and mebendazole, i.e., benzimidazole broad-spectrum anthelmintics, in treatment of parasitic infections, as well as cancers, is briefly reviewed. These drugs are known to block the microtubule systems of parasites and mammalian cells leading to inhibition of glucose uptake and transport and finally cell death. Eventually they exhibit ovicidal, larvicidal, and vermicidal effects on parasites, and tumoricidal effects on hosts. Albendazole and mebendazole are most frequently prescribed for treatment of intestinal nematode infections (ascariasis, hookworm infections, trichuriasis, strongyloidiasis, and enterobiasis) and can also be used for intestinal tapeworm infections (taeniases and hymenolepiasis). However, these drugs also exhibit considerable therapeutic effects against tissue nematode/cestode infections (visceral, ocular, neural, and cutaneous larva migrans, anisakiasis, trichinosis, hepatic and intestinal capillariasis, angiostrongyliasis, gnathostomiasis, gongylonemiasis, thelaziasis, dracunculiasis, cerebral and subcutaneous cysticercosis, and echinococcosis). Albendazole is also used for treatment of filarial infections (lymphatic filariasis, onchocerciasis, loiasis, mansonellosis, and dirofilariasis) alone or in combination with other drugs, such as ivermectin or diethylcarbamazine. Albendazole was tried even for treatment of trematode (fascioliasis, clonorchiasis, opisthorchiasis, and intestinal fluke infections) and protozoan infections (giardiasis, vaginal trichomoniasis, cryptosporidiosis, and microsporidiosis). These drugs are generally safe with few side effects; however, when they are used for prolonged time (>14-28 days) or even only 1 time, liver toxicity and other side reactions may occur. In hookworms, Trichuris trichiura, possibly Ascaris lumbricoides, Wuchereria bancrofti, and Giardia sp., there are emerging issues of drug resistance. It is of particular note that albendazole and mebendazole have been repositioned as promising anti-cancer drugs. These drugs have been shown to be active in vitro and in vivo (animals) against liver, lung, ovary, prostate, colorectal, breast, head and neck cancers, and melanoma. Two clinical reports for albendazole and 2 case reports for mebendazole have revealed promising effects of these drugs in human patients having variable types of cancers. However, because of the toxicity of albendazole, for example, neutropenia due to myelosuppression, if high doses are used for a prolonged time, mebendazole is currently more popularly used than albendazole in anti-cancer clinical trials.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.46-52
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• 2012

Separate extraction of source ($R_S$) and drain ($R_D$) resistances caused by process, layout variations and long term degradation is very important in modeling and characterization of MOSFETs. In this work, we propose "Avalanche Hot-Source Method (AHSM)" for simple separated extraction of $R_S$ and $R_D$ in a single device. In AHSM, the high field region near the drain works as a new source for abundant carriers governing the current-voltage relationship in the MOSFET at high drain bias. We applied AHSM to n-channel MOSFETs as single-finger type with different channel width/length (W/L) combinations and verified its usefulness in the extraction of $R_S$ and $R_D$. We also confirmed that there is a negligible drift in the threshold voltage ($V_T$) and the subthreshold slope (SSW) even after application of the method to devices under practical conditions.

• Journal of IKEEE
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• v.1 no.1 s.1
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• pp.11-18
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• 1997

By utilizing the technique to monitor the DC cell node voltages through circuit simulation, degradation of the static read operating margin In high load-resistor SRAM cell was examined, which is caused by parasitic resistances and transistor asymmetries in this cell structure. By selectively adding the parasitic resistances to an ideal cell, the influence of each parasitic resistance on the operating margin was examined, and then the cases with parasitic resistances in pairs were also examined. By selectively changing the channel width of cell transistors to generate cell asymmetry, the influence of cell asymmetry on the operating margin was also examined. Analyses on the operating margins were performed by comparing the supply voltage values at which two cell node voltages merge to a single value and the differences of cell node voltages at VDD=5V in the simulated node voltage characteristics. By determining the parasitic resistances and the transistor asymmetries which give the most serious effect on the static read-operation of SRAM cell from this analysis based on circuit simulated, a criteria was provided, which can be referred in the design of new SRAM cell structures.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.801-803
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• 2004

The current drive in an MOSFET is limited by the intrinsic channel resistance. All the other parasitic elements in a device structure playa significant role and degrade the device performance. These other resistances need to be less than $10{\%}-20{\%}$ of the channel resistance. To achieve the requirements, we should investigate the methodology of separation and quantification of those resistances. In this paper, we developed the extraction method of resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that forms under the gate in the tail region of the extension profile. This resistance is strongly affected by the abruptness of the extension profile because the steeper the profile is, the shorter this accumulation region will be.